SI4925BDY Search Results

Contextual Info: Si4925BDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.025 at VGS = - 10 V - 7.1 0.041 at VGS = - 4.5 V - 5.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

4798

Abstract: AN609 Si4925BDY 14066m
Contextual Info: Si4925BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si4925DY

Abstract: Si4925DY-T1 SI4925BDY transistor Si4925BDY Si4925BDY-E3 Si4925BDY-T1 Si4925BDY-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si4925BDY vs. Si4925DY Description: Dual P-Channel, 30 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4925BDY Replaces Si4925DY Si4925BDY-E3 (Lead (Pb)-free version) Replaces Si4925DY

SI4925BDY transistor

Abstract: Si4925BDY Si4925BDY-T1
Contextual Info: Si4925BDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.025 @ VGS = - 10 V - 7.1 0.041 @ VGS = - 4.5 V - 5.5 D TrenchFETr Power MOSFET D Advanced High Cell Density Process APPLICATIONS D Load Switches

70105

Abstract: SI4925BDY transistor Si4925BDY A1920
Contextual Info: SPICE Device Model Si4925BDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4925BDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Advanced High Cell Density Process PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.025 @ VGS = −10 V −7.1 APPLICATIONS 0.041 @ VGS = −4.5 V −5.5 D Load Switches

SI4925BDY-T1

Abstract: Si4925BDY Si4925BDY-T1-E3 Si4925BDY-T1-GE3
Contextual Info: Si4925BDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.025 at VGS = - 10 V - 7.1 0.041 at VGS = - 4.5 V - 5.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

70105

Abstract: Si4925BDY
Contextual Info: SPICE Device Model Si4925BDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI4925DDY

Abstract: SI4925BDY transistor Si4925BDY Si4925BDY-T1-E3 Si4925BDY-T1-GE3 Si4925DDY-T1-GE3
Contextual Info: Specification Comparison Vishay Siliconix Si4925DDY vs. Si4925BDY Description: Package: Pin Out: P-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4925DDY-T1-GE3 replaces Si4925BDY-T1-E3 Si4925DDY-T1-GE3 replaces Si4925BDY-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Contextual Info: Si4925BDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Advanced High Cell Density Process PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.025 @ VGS = −10 V −7.1 APPLICATIONS 0.041 @ VGS = −4.5 V −5.5 D Load Switches

Si4925BDY

Contextual Info: Si4925BDY New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.025 @ VGS = -10 V -7.1 0.041 @ VGS = -4.5 V - 5.5 D TrenchFETr Power MOSFET D Advanced High Cell Density Process APPLICATIONS -30

Si4925BDY-T1-GE3

Abstract: Si4925BDY Si4925BDY-T1-E3
Contextual Info: Si4925BDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.025 at VGS = - 10 V - 7.1 0.041 at VGS = - 4.5 V - 5.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si4925BDY-T1-GE3

Abstract: SI4925B
Contextual Info: Si4925BDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.025 at VGS = - 10 V - 7.1 0.041 at VGS = - 4.5 V - 5.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SI4925BDY marking

Abstract: Si4925BDY Si4925BDY-T1
Contextual Info: Si4925BDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Advanced High Cell Density Process PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.025 @ VGS = −10 V −7.1 APPLICATIONS 0.041 @ VGS = −4.5 V −5.5 D Load Switches

70105

Abstract: SI4925BDY transistor Si4925BDY
Contextual Info: SPICE Device Model Si4925BDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

RTL8192

Abstract: RTL819 abc c789 100uf 10p MEC1308-NU BA59-02570A tps51620 w192 BA41-01100A rtl-8192 mec1308
Contextual Info: Point LABEL-LOGO BEZEL-ODD KNOB-ODD LENS-ODD HDD Componet BA68-10150B BA81-06661A BA81-06662A BA81-06663A BA59-02348A Object description LABEL-LOGO_SAMSUNG;NP,SEC,ARTPAPER+OPP COATING,-,-,-,-,W

c5129

Abstract: C5149 C5148 88E8001 CPUTEST29H D4203 D4004 u6202 R6130 R6503
Contextual Info: 5 4 3 2 A6M 1 REVISION: 2.0 128-BIT AMD S1g1 D Unbuffer DDR2 SO-DIMM Channel A/B x16 HyperTransport 200/400/800 MHz 638 PIN PACKAGE LVDS nVIDIA Gigabit Ethernet RTL8111B PCI-E x1 CRT C51MV C TV OUT X8 /X4 HyperTransport 200/400/800 MHz BGA 468 PCMCIA 33MHz

1N4007 MINI MELF

Contextual Info: LCD Television Table of Contents BACKLIGHT INVERTER, Lighting Ignitor. 3 BACKLIGHT INVERTER, MOSFET Driver. 4

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

BS250KL-TR1-E3

Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

Contextual Info: LTC4100 Smart Battery Charger Controller FEATURES n n n n n n n n n n n n n n n DESCRIPTION Single Chip Smart Battery Charger Controller 100% Compliant Rev. 1.1 SMBus Support Allows for Operation with or without Host SMBus Accelerator Improves SMBus Timing