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    SI3433DV Search Results

    SI3433DV Datasheets (3)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    Si3433DV
    		Vishay Intertechnology P-Channel 1.8-V (G-S) MOSFET Original PDF 30.55KB 3
    SI3433DV
    		Vishay Telefunken Original PDF 42.29KB 4
    Si3433DV SPICE Device Model
    		Vishay P-Channel xx-V (x-S) MOSFET Original PDF 201.22KB 3
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    SI3433DV Price and Stock

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    Vishay Intertechnologies SI3433DV-T1

    Trans MOSFET P-CH 20V 4.3A 6-Pin TSOP T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI3433DV-T1 2,100
    • 1 -
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    Quest Components () SI3433DV-T1 1,680
    • 1 $0.78
    • 10 $0.78
    • 100 $0.78
    • 1000 $0.20
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    SI3433DV-T1 787
    • 1 $0.83
    • 10 $0.83
    • 100 $0.83
    • 1000 $0.33
    • 10000 $0.33
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    Vishay Siliconix SI3433DV-T1-E3

    4300 MA, 20 V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SI3433DV-T1-E3 2,299
    • 1 $1.35
    • 10 $1.35
    • 100 $1.35
    • 1000 $0.56
    • 10000 $0.49
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    SI3433DV Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SI3433BDV-T1-E3

    Abstract: Si3433BDV Si3433BDV-T1 Si3433DV si3433
    Contextual Info: Specification Comparison Vishay Siliconix Si3433BDV vs. Si3433DV Description: P-Channel, 1.8 V G-S MOSFET Package: TSOP-6 Pin Out: Identical Part Number Replacements: Si3433BDV-T1 Replaces Si3433DV-T1 Si3433BDV-T1-E3 (Lead (Pb)-free version) Replaces Si3433DV-T1


    Original     		si3433bdvsi3433dvsi3433bdv-t1si3433dv-t1+3si3433bdv-t1-e306-nov-06si3433 PDF

    AN609

    Abstract: Si3433DV 73519
    Contextual Info: Si3433DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		si3433dvan60930-nov-0573519 PDF

    P-Channel 1.8V MOSFET

    Abstract: Si3433DV
    Contextual Info: SPICE Device Model Si3433DV P-Channel 1.8-V G-S MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-Circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


    Original     		si3433dvp-channel 1.8v mosfet PDF

    S0062

    Contextual Info: Si3433DV New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.042 @ VGS = –4.5 V –5.6 0.057 @ VGS = –2.5 V –4.8 0.080 @ VGS = –1.8 V –4.1 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D


    Original     		si3433dvs-00624--rev03-apr-00s0062 PDF

    Si3433DV

    Contextual Info: SPICE Device Model Si3433DV Vishay Siliconix P-Channel xx-V x-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		si3433dv16-apr-01 PDF

    r9824

    Abstract: R9825 HT 1200-4 smd L9707 HT 1200-4 r9810 L9708 U5400 r2561 C3523
    Contextual Info: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 D C B PAGE PDF 1 2 3 4 6 7 8 9 10 11 13* 14 16


    Original     		1/10wxw9902xc990150r28+15u9500xw990325mil10milr9915r9824r9825ht 1200-4 smdl9707ht 1200-4r9810l9708u5400r2561c3523 PDF

    IRF5505

    Abstract: C3427 SN7002DW LD1807 343S0284 apple AirPort Extreme h11m r3361 HC17051 1n914 onsemi
    Contextual Info: 6 7 B A 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 REV 08/03/04 CIRCUIT


    Original     		test10test11cs8406ra300+12ra3021/16wirf5505c3427sn7002dwld1807343s0284apple airport extremeh11mr3361hc170511n914 onsemi PDF

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		si4831dysi4833dysi4852dysi4816dy+1410singlevn50300lvn50300tot-23vn66afdvn10klsmosfet bs250si4730sup85n03-04psi4835dysi5504si3459dvsup65p06sub75p05 PDF

    SMC1602

    Abstract: SN7002DW c3231 Q2576 r2561 C3239 C3303 C2651 C5060 U4900
    Contextual Info: 8 6 7 C B A PAGE PDF 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 2 3


    Original     		cs8406ra300ra3021/16w+10smc1602sn7002dwc3231q2576r2561c3239c3303c2651c5060u4900 PDF

    R9810

    Abstract: HT 1200-4 smd r9824 HT 1200-4 c6011 L9707 L5800 c9611 C3150 ic c2335
    Contextual Info: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 B 1 2 3 4 6 7 8 9 10 11 13* 14 16 17 18 21* 22


    Original     		1/10wxw9902xc990150r28+15u9500xw990325mil10milr9915r9810ht 1200-4 smdr9824ht 1200-4c6011l9707l5800c9611c3150ic c2335 PDF