STK38N3LLH5 Search Results

Contextual Info: STK38N3LLH5 N-channel 30 V, 1.3 mΩ, 38 A, PolarPAK STripFET V Power MOSFET Features Type VDSS STK38N3LLH5 30 V RDS on max RDS(on)*Qg 1.55 mΩ 70.9 nC*mΩ • Ultra low top and bottom junction to case thermal resistance ■ Extremely low on-resistance RDS(on)

STK38N3LLH5

Contextual Info: STK38N3LLH5 N-channel 30 V, 1.3 mΩ, 38 A, PolarPAK STripFET V Power MOSFET Features Type VDSS STK38N3LLH5 30 V RDS on max RDS(on)*Qg 1.55 mΩ 70.9 nC*mΩ • Ultra low top and bottom junction to case thermal resistance ■ Extremely low on-resistance RDS(on)

Contextual Info: STK38N3LLH5 N-channel 30 V, 0.0017Ω, 38 A, PolarPAK STripFET V Power MOSFET Preliminary Data Features Type VDSS STK38N3LLH5 30V RDS on <0.002Ω RDS(on)*Qg PTOT 72nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Extremely low on-resistance RDS(on)

JESD97

Abstract: STK38N3LLH5
Contextual Info: STK38N3LLH5 N-channel 30 V, 0.0014Ω, 38 A, PolarPAK STripFET V Power MOSFET Preliminary Data Features Type STK38N3LLH5 VDSS RDS on max 30 V <0.0018Ω RDS(on)*Qg 61.2 nC*mΩ • Ultra low top and bottom junction to case thermal resistance ■ Extremely low on-resistance RDS(on)

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

STripFET

Abstract: STD85N3LH5 STD60N3LH5 STD70N2LH5 STD95N2LH5 STL150N3LLH5 STL65N3LLH5 STS14N3LLH5 STU60N3LH5 STU70N2LH5
Contextual Info: STripFETTM V The latest DC-DC converters - more power per cubic inch STMicroelectronics’ latest proprietary STripFET technology delivers extremely low conduction and switching losses and achieves the lowest figure of merit FOM among comparable devices.

STripFET

Abstract: STD85N3LH5 STS14N3LLH5 44 LS 95 NC 1350 ls 7400 7400 ls STU60N3LH5 STD60N3LH5 STD50N03L
Contextual Info: Power MOSFETs STripFETTM V STripFET V: main features Metal layer RMET reduction Sketch of STripFET V Structure METAL TEOS POLY SOURCE BODY Drain engineering REPI reduction Enhan. DE Double gate oxide thickness Qg reduction DE Vertical contact µ-Trench Rch reduction

STY112N65M5

Abstract: STB46NF30 STP65NF06 STL120N2VH5 STx30NF20 STZ150NF55T STx7N52K3 STW7NK90Z STW25N95K3 STS7PF30L ST
Contextual Info: Power MOSFETs Selection guide February 2009 www.st.com/pmos Ordering information Technology digits may be placed also at the end of the part number. 300 500 600 650 0.09 0.05 0.054 0.085 0.115 0.14 0.19 0.26 0.32 0.38 0.56 0.78 0.035 0.06 0.088 0.13 0.165