STW12 Search Results

STW12NC60

Abstract: diode F4 6A
Contextual Info: STW12NC60 N-CHANNEL 600V - 0.48Ω - 12A TO-247 PowerMesh II MOSFET TYPE STW12NC60 • ■ ■ ■ ■ VDSS RDS on ID 600V < 0.55Ω 12 A TYPICAL RDS(on) = 0.48Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

Contextual Info: ¿57 TYP E S GS-THOMSON ¡[LiCTIiMOOS N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V STH 12N A60 STH 12N A60FI STW 12N A60 STH12NA60/FI STW12NA60 dss 600 V 600 V 600 V R DS on Id < 0 .6 Q. < 0 .6 Q. < 0 .6 Q. 12 A 7 A 12 A . TYPICAL R DS(on) = 0.44 Q.

STP120NF10

Abstract: STB120NF10 STW120NF10 W120NF10 B120NF10 P120NF10
Contextual Info: STP120NF10 - STB120NF10 STW120NF10 N-channel 100V - 0.009Ω - 110A - TO-247 - TO-220 - D²PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STW120NF10 STP120NF10 STB120NF10 100V 100V 100V <0.0105Ω <0.0105Ω <0.0105Ω 110A 110A 110A

P12NK80

Abstract: VDD400 w12nk80z B12NK80Z stw12nk80z p12nk80z W12NK80
Contextual Info: STB12NK80Z STP12NK80Z - STW12NK80Z N-CHANNEL 800V - 0.65Ω - 10.5A - TO220-D²PAK-TO247 Zener-Protected SuperMESH MOSFET General features VDSS Type STB12NK80Z STP12NK80Z STW12NK80Z Package RDS on 800 V <0.75 Ω 800 V <0.75 Ω 800 V <0.75 Ω ID Pw 10.5 A

w12nk80z

Abstract: p12nk80z stw12nk80z b12nk80z STB12NK80Z STB12NK80ZT4 STP12NK80Z
Contextual Info: STP12NK80Z - STB12NK80Z STW12NK80Z N-CHANNEL 800V - 0.65Ω - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STP12NK80Z STB12NK80Z STW12NK80Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 V 800 V 800 V < 0.75 Ω < 0.75 Ω < 0.75 Ω

Contextual Info: STW12NK90Z N-channel 900 V, 0.72 Ω, 11 A TO-247 Zener-protected SuperMESH Power MOSFET Features Order code VDSS RDS on max STW12NK90Z 900 V < 0.88 Ω ID Pw 11 A 230 W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized

Contextual Info: STP12NK60Z STF12NK60Z, STW12NK60Z N-channel 650 V @Tjmax, 0.53 Ω, 10 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESH Power MOSFET Features RDS on max Type VDSS (@Tjmax) STP12NK60Z 650 V <0.640 Ω 10 A 150 W STF12NK60Z 650 V <0.640 Ω 10 A STW12NK60Z

stw12na50

Contextual Info: STW12NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STW12NA50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.6 Ω 11.6 A TYPICAL RDS(on) = 0.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

P12NK80Z

Abstract: W12NK80Z W12NK80 JESD97 STB12NK80Z STP12NK80Z STW12NK80Z B12NK80Z b12nk8 P12NK
Contextual Info: STB12NK80Z STP12NK80Z - STW12NK80Z N-channel 800V - 0.65Ω - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH MOSFET General features Type VDSS RDS on (@Tjmax) ID PW STB12NK80Z 800V <0.75Ω 10.5 A 190W STP12NK80Z 800V <0.75Ω 10.5 A 190W

P12NK80

Abstract: w12nk80z W12NK80 p12nk80z W12NK STP12NK80Z P12NK b12nk8 JESD97 STB12NK80Z
Contextual Info: STB12NK80Z STP12NK80Z - STW12NK80Z N-channel 800V - 0.65Ω - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH Power MOSFET Features Type VDSS RDS on (@Tjmax) ID PW STB12NK80Z 800V <0.75Ω 10.5 A 190W STP12NK80Z 800V <0.75Ω 10.5 A 190W 3

12NA50

Contextual Info: SGS-THOMSON * 5 iL iO M K I 7 STW12NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STW 12NA50 . T Y P IC A L V dss R DS on Id 500 V < 0.6 a 11.6 A R D S (o n ) = 0.5 Q m ± 30V G A TE TO S O U R C E V O LT A G E R ATING . . • . . 100% A V A LA N C H E TE S TE D

W12NK90Z

Abstract: STW12NK90Z W12NK w12nk90 NC 9615
Contextual Info: STW12NK90Z N-channel 900 V, 0.72 Ω, 11 A TO-247 Zener-protected SuperMESH Power MOSFET Features Order code VDSS RDS on max STW12NK90Z 900 V < 0.88 Ω ID Pw 11 A 230 W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized

w12nk60z

Abstract: P12NK60Z STW12NK60Z isd 1740 F12NK60Z STF12NK60Z STP12NK60Z P12NK60
Contextual Info: STP12NK60Z STF12NK60Z, STW12NK60Z N-channel 650 V @Tjmax, 0.53 Ω, 10 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESH Power MOSFET Features RDS on max Type VDSS (@Tjmax) STP12NK60Z 650 V <0.640 Ω 10 A 150 W STF12NK60Z 650 V <0.640 Ω 10 A STW12NK60Z

uc3843 12v to 24v

Abstract: uc3842 half bridge forward converter UC3843 uc3845 half bridge mc34063 5v 4A uc3842 200w uc3843 12v to 40v stepdown uc3842 uc3844 100w uc3842 full bridge
Contextual Info: POWER SUPPLIES HIGH POWER FULL & HALF BRIDGE CONVERTER RECTIFICATION BRIDGES Type OUTPUT POWER AC < 1000W 110V 220V 380V ▲ STP11NB40▲ STP10NA40/FI STW16NA40 STW15NB50▲ STU14NA50▲ STW20N350▲ STH15NA50FI STP9NB50/FI▲ STP8NA50/FI STP6NB50▲ STW12NA50

F12NM60N

Abstract: STP12NM60N STP12NM60 STB12NM60N STB12NM60N-1 STF12NM60N STW12NM60N
Contextual Info: STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID 3 3 12 1 STB12NM60N 650V < 0.41Ω 10A STB12NM60N-1 650V < 0.41Ω

P12NM60

Contextual Info: STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID 3 3 12 1 STB12NM60N 650V < 0.41Ω 10A STB12NM60N-1 650V < 0.41Ω

12NK80

Abstract: 9567 12NK80Z
Contextual Info: STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z N-channel 800 V, 0.65Ω typ., 10.5 A Zener-protected SuperMESH Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 Datasheet — production data Features TAB VDSS RDS on (@Tjmax) Type STB12NK80Z STF12NK80Z

STP120NF10

Abstract: STB120NF10 STW120NF10 W120NF10 B120NF10 P120NF10
Contextual Info: STP120NF10 - STB120NF10 STW120NF10 N-channel 100V - 0.009Ω - 120A - TO-247 - TO-220 - D²PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STW120NF10 STP120NF10 STB120NF10 100V 100V 100V <0.0105Ω <0.0105Ω <0.0105Ω 120A 120A 120A

STW12NA60

Abstract: TRANSISTOR DG S-10 STH12NA60 STH12NA60FI
Contextual Info: STH12NA60/FI STW12NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STH12NA60 STH12NA60FI STW12NA60 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 600 V 600 V 600 V < 0.6 Ω < 0.6 Ω < 0.6 Ω 12 A 7A 12 A TO-247 TYPICAL RDS(on) = 0.44 Ω

transistor d 1557

Abstract: STW12NA50
Contextual Info: STW12NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STW12NA50 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 500 V < 0.6 Ω 11.6 A TYPICAL RDS(on) = 0.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

STW12NC60

Contextual Info: STW12NC60 N-CHANNEL 600V - 0.48Ω - 12A TO-247 PowerMesh II MOSFET TYPE STW12NC60 • ■ ■ ■ ■ VDSS RDS on ID 600V < 0.55Ω 12 A TYPICAL RDS(on) = 0.48Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

12N120K5

Abstract: STB12N120K5 w12n120
Contextual Info: STB12N120K5, STFW12N120K5 STP12N120K5, STW12N120K5 N-channel 1200 V, 0.58 Ω, 12 A D²PAK, TO-3PF, TO-220, TO-247 Zener-protected SuperMESH 5 Power MOSFET Preliminary data Features TAB Order codes VDSS RDS on max. ID 1 PW 2 3 3 1 STB12N120K5 250 W STFW12N120K5

STH12NA60

Abstract: STH12NA60FI STW12NA60 transistor d 1557
Contextual Info: STH12NA60/FI STW12NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS R DS on ID STH12NA60 STH12NA60FI STW12NA60 600 V 600 V 600 V < 0.6 Ω < 0.6 Ω < 0.6 Ω 12 A 7A 12 A • ■ ■ ■ ■ ■ ■ TO-247 TYPICAL RDS(on) = 0.44 Ω ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: , One, TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 STP12NK80Z - STB12NK80Z STW12NK80Z N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STP12NK80Z