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    STGW60H65F Search Results

    STGW60H65F Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    STGW60H65F
    STMicroelectronics IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 120A 360W TO247 Original PDF 14
    STGW60H65FB
    STMicroelectronics IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 80A 375W TO247 Original PDF 16
    SF Impression Pixel

    STGW60H65F Price and Stock

    STMicroelectronics

    STMicroelectronics STGW60H65FB

    IGBT TRENCH FS 650V 80A TO-247
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    DigiKey STGW60H65FB Tube 373 1
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    Avnet Americas STGW60H65FB Tube 600 15 Weeks 600
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    Mouser Electronics STGW60H65FB
    • 1 $5.01
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    STMicroelectronics STGW60H65FB 1
    • 1 $5.03
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    TME STGW60H65FB 1
    • 1 $5.49
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    Avnet Silica STGW60H65FB 600 16 Weeks 30
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    STMicroelectronics STGW60H65F

    IGBT TRENCH FS 650V 120A TO-247
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    DigiKey STGW60H65F Tube 600
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    Verical STGW60H65F 1,200 2
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    Arrow Electronics STGW60H65F 1,200 99 Weeks 1
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    Vyrian STGW60H65F 1,702
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    STMicroelectronics STGW60H65FB (HB)

    Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Stmicroelectronics STGW60H65FB
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    Newark STGW60H65FB (HB) Bulk 467 1
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    STGW60H65F Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    STGW60

    Abstract: gw60 STGWT60H65F 019012 AM-1185 stgw60h65
    Contextual Info: STGW60H65F STGWT60H65F 60 A, 650 V field stop trench gate IGBT Datasheet − production data Features • High speed switching ■ Tight parameter distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ 2 Lead free package


    Original
    STGW60H65F STGWT60H65F O-247 STGW60 gw60 STGWT60H65F 019012 AM-1185 stgw60h65 PDF

    ST IGBT code marking

    Abstract: STGW60H65F GW60H65F
    Contextual Info: STGW60H65F 60 A, 650 V field stop trench gate IGBT Preliminary data Features • Very high speed switching ■ Tight parameter distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ Lead free package 2 3 1 Applications


    Original
    STGW60H65F O-247 ST IGBT code marking STGW60H65F GW60H65F PDF

    Contextual Info: STGW60H65FB STGWT60H65FB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original
    STGW60H65FB STGWT60H65FB O-247 DocID025187 PDF

    Contextual Info: STGW60H65F 60 A, 650 V field stop trench gate IGBT Features • Very high speed switching ■ Tight parameter distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ Lead free package 2 3 1 Applications TO-247


    Original
    STGW60H65F O-247 PDF

    Contextual Info: STGW60H65FB STGWT60H65FB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original
    STGW60H65FB STGWT60H65FB O-247 DocID025187 PDF

    GW60H65F

    Abstract: STPSC1206D STGW60H65F
    Contextual Info: STGW60H65F 60 A, 650 V field stop trench gate IGBT Features • High speed switching ■ Tight parameter distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ Lead free package 2 3 1 Applications TO-247


    Original
    STGW60H65F O-247 GW60H65F STPSC1206D STGW60H65F PDF