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ST2341S23RG Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: ST2341S23RG P Channel Enhancement Mode MOSFET -5.3A DESCRIPTION ST2341S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are	Original	st2341s23rg ot-23-3l -20v/-3 30m-ohm +2-20v/-2 st2341srg3rg	PDF
p channel mosfet 10a 20v Contextual Info: ST2341 P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2341 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are	Original	st2341 ot-23-3l -20v/-3 36m-ohm +4-20v/-2 45m-ohm 55m-ohm p channel mosfet 10a 20v	PDF

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Contextual Info: ST2341S23RG P Channel Enhancement Mode MOSFET -5.3A DESCRIPTION ST2341S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

Original

st2341s23rg ot-23-3l -20v/-3 30m-ohm +2

PDF

p channel mosfet 10a 20v

Contextual Info: ST2341 P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2341 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

Original

st2341 ot-23-3l -20v/-3 36m-ohm +4

PDF