ST2341 Search Results
ST2341 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
ST2341MContextual Info: M ST2341 ST2341M P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2341M is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are |
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st2341mot-23-3l-20v/-2-20v/-cs+1 | |
p channel mosfet 10a 20vContextual Info: ST2341 P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2341 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are |
Original |
st2341ot-23-3l-20v/-336m-ohm+4 | |
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Contextual Info: ST2341SRG P Channel Enhancement Mode MOSFET -3.2A DESCRIPTION ST2341SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for |
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st2341srgot-23-20v/-3-20v/-2 | |
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Contextual Info: ST2341S23RG P Channel Enhancement Mode MOSFET -5.3A DESCRIPTION ST2341S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are |
Original |
st2341s23rgot-23-3l-20v/-330m-ohm+2 |