ST1200FXF21 Search Results
ST1200FXF21 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| ST1200FXF21 |
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Silicon N Channel Press Pack IGBT | Original | 105.7KB | 4 | ||
| ST1200FXF21 |
|
IGBT | Original | 75.77KB | 4 |
ST1200FXF21 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: ST1200FXF21 NEW PRODUCT GUIDE Outline As the successor to the 2500-V, 1000-A insulated-gate bipolar transistor IGBT , Toshiba are marketing their newly developed 3300-V, 1200-A IGBT, which comes in a flat package with compression-bonded encapsulation. The new IGBT uses Toshiba’s original multi-pellet alloy-free assembly structure. The bonding wires and soldering |
Original |
st1200fxf21500-v000-a300-v+1 | |
Press pack IGBT Toshiba
Abstract: press-pack igbt sg6105dz ST1200 TOSHIBA IGBT DATA BOOK Vcc-1500 ST1200FXF21 Diode BY 1200
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Original |
st1200fxf21press pack igbt toshibapress-pack igbtsg6105dz+4 | |
str 6307
Abstract: str 6307 datasheet STR 6307 POWER sg6105dz Toshiba IGBT 1200A 3300V toshiba gto TOSHIBA IGBT snubber STR S 6307 toledo TOSHIBA str module
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Original |
st1200fxf21500-v000-a300-v+11 | |
Press pack IGBT Toshiba
Abstract: transistor bipolar
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Original |
st1200fxf21press pack igbt toshibatransistor bipolar | |
Press pack IGBT ToshibaContextual Info: ST1200FXF21 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel Press Pack IGBT ST1200FXF21 High Power Switching Applications Motor Control Applications Unit: mm • All electric contacts by pressure structure and airtight package • Anti-parallel fast recovery diode in this package |
Original |
st1200fxf2120max68max120max+1 |