SSM3J01 Search Results

SSM3J01T

Contextual Info: SSM3J01T 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM3J01T ○ パワーマネジメントスイッチ ○ 高速スイッチング • • • 単位: mm 小型パッケージで高密度実装に最適 オン抵抗が低い。

SSM3J01T

Contextual Info: SSM3J01T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01T Power Management Switch High Speed Switching Applications • · · Unit: mm Small Package Low on Resistance : Ron = 0.4 Ω max (@VGS = −4 V) : Ron = 0.6 Ω (max) (@VGS = −2.5 V)

Contextual Info: SSM3J01F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01F High Speed Switching Applications Unit: mm • Small package • Low on resistance : Ron = 0.4 Ω max (VGS = −4 V) : Ron = 0.6 Ω (max) (VGS = −2.5 V) • Low gate threshold voltage

Contextual Info: SSM3J01T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01T Power Management Switch High Speed Switching Applications • • • Unit: mm Small Package Low on Resistance : Ron = 0.4 Ω max (@VGS = −4 V) : Ron = 0.6 Ω (max) (@VGS = −2.5 V)

Contextual Info: SSM3J01T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01T Power Management Switch High Speed Switching Applications • • • Unit: mm Small Package Low on Resistance : Ron = 0.4 Ω max (@VGS = −4 V) : Ron = 0.6 Ω (max) (@VGS = −2.5 V)

SSM3J01F

Contextual Info: SSM3J01F 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM3J01F ○ パワーマネジメントスイッチ ○ 高速スイッチング 単位: mm • 小型パッケージで高密度実装に最適 • オン抵抗が低い。 : Ron = 0.4 Ω max (VGS = −4 V)

Contextual Info: TOSHIBA SSM3J01F TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM3J01 F HIGH SPEED SWITCHING APPLICATIONS U nit in mm + 0.5 • Small Package • Low on Resistance • Low Gate Threshold Voltage : Ron = 0.4 Cl Max. (VQg : Ron = 0.6 O (Max.) (Vq s

Contextual Info: SSM3J01F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01F High Speed Switching Applications Unit: mm • Small package • Low on resistance : Ron = 0.4 Ω max (VGS = −4 V) : Ron = 0.6 Ω (max) (VGS = −2.5 V) • Low gate threshold voltage

SSM3J01F

Contextual Info: SSM3J01F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01F High Speed Switching Applications Unit: mm • Small package • Low on resistance : Ron = 0.4 Ω max (VGS = −4 V) : Ron = 0.6 Ω (max) (VGS = −2.5 V) • Low gate threshold voltage

Contextual Info: TOSHIBA SSM3J01F TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM3J01 F HIGH SPEED SWITCHING APPLICATIONS U nit in mm + 0.5 • Small Package • Low on Resistance • Low Gate Threshold Voltage : Ron = 0.4 Cl Max. (VQg : Ron = 0.6 O (Max.) (Vq s

SSM3J01F

Contextual Info: SSM3J01F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01F High Speed Switching Applications Unit: mm • Small package • Low on resistance : Ron = 0.4 Ω max (VGS = −4 V) : Ron = 0.6 Ω (max) (VGS = −2.5 V) • Low gate threshold voltage

SSM3J01F

Contextual Info: SSM3J01F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01F High Speed Switching Applications Unit: mm • Small package · Low on resistance : Ron = 0.4 Ω max (VGS = −4 V) : Ron = 0.6 Ω (max) (VGS = −2.5 V) · Low gate threshold voltage

Contextual Info: SSM3J01T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01T Power Management Switch High Speed Switching Applications • • • Unit: mm Small Package Low on Resistance : Ron = 0.4 Ω max (@VGS = −4 V) : Ron = 0.6 Ω (max) (@VGS = −2.5 V)

SSM3J01F

Contextual Info: TO SH IBA SSM3J01F TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM3J01 F HIGH SPEED SWITCHING APPLICATIONS Unit in mm + 0.5 • Small Package • Low on Resistance • : Ron = 0.4 Cl Max. (VQg —4 V) : Ron = 0.6 O (Max.) (Vq s - 2 . 5 V)

SSM3J01T

Contextual Info: SSM3J01T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01T Power Management Switch High Speed Switching Applications • • • Unit in mm Small Package Low on Resistance : Ron = 0.4 Ω max (＠VGS = −4 V) : Ron = 0.6 Ω (max) (＠VGS = −2.5 V)

Contextual Info: TOSHIBA SSM3J01F TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM3J01 F HIGH SPEED SWITCHING APPLICATIONS • • • + 0.5 Small Package Low on Resistance : Ron = 0.4 Cl Max. (V qs = —4 V) : Ron = 0.6 il (Max.) (Vq s = -2 .5 V) LowGate Threshold Voltage

5252 F 1009 4-pin

Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

SSM3K7002

Abstract: ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T
Contextual Info: S-MOS Series Small-Signal MOSFETs for Switching PRODUCT GUIDE S -MOS Family S-MOS Family Toshiba presents a range of small-signal MOSFET S-MOS devices which have been developed for various switching, interface and DC/DC converter applications. These MOSFETs have been classified into families according to application,

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

2SK4207

Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入