310DG
Abstract: FET MARKING QG 117M marking SMG2304A
Contextual Info: SMG2304A 2.5A, 30V,RDS ON 117mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A L SC-59 Description The SMG2304A utilized advanced processing techniques to achieve the lowest possible onresistance, extremely efficient and costeffectiveness device. The SMG2304A is
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smg2304asc-5901-jun-2002310dg+2fet marking qg117m marking
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FET MARKING QG
Abstract: 117M marking 12V 1A MOSFET N-channel SMG2304 27a diode
Contextual Info: SMG2304 2.7A, 25V,RDS ON 117mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A L SC-59 Description The SMG2304 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
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smg2304sc-5901-jun-2002fet marking qg+3117m marking12v 1a mosfet n-channel27a diode
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