SMD5962 Search Results

11C68

Abstract: stk 090 STK11C68 CDIP28 STK11C68-SF45I
Contextual Info: STK11C68, STK11C68-5 SMD5962–92324 8Kx8 SoftStore nvSRAM FEATURES DESCRIPTION • 25, 35, 45, and 55 ns Read Access & R/W Cycle Times The Simtek STK11C68 is a 64Kb fast static RAM with a nonvolatile Quantum Trap storage element included with each memory cell.

STK12C68

Abstract: STK12C68-5C35M stk12c68-5c55m package dimensions STK12C68-5K35M STK12C68-5L35M
Contextual Info: STK12C68-5 SMD5962-94599 64 Kbit (8K x 8) AutoStore nvSRAM Features Functional Description • 35 ns and 55 ns access times ■ Hands off automatic STORE on power down with external 68 µF capacitor ■ STORE to QuantumTrap nonvolatile elements is initiated

STK 453 030

Abstract: stk 090 12C68 STK12C68 CDIP28 stk 014 STK12C68-SF45 5962-94599 NVSRAM stk 453
Contextual Info: STK12C68, STK12C68-5 SMD5962-94599 8Kx8 AutoStore nvSRAM FEATURES DESCRIPTION • 25, 35, 45, 55 ns Read Access & Write Cycle Time The Simtek STK12C68 is a 64Kb fast static RAM with a non-volatile Quantum Trap storage element included with each memory cell.

CDIP28

Abstract: CLCC-28 STK11C68 clcc28 CDIP28 package 5962-9232405MXC smd L35 sop28 5962-9232406MYA 5962-9232404MYX
Contextual Info: STK11C68 SMD5962–92324 8Kx8 SoftStore nvSRAM FEATURES DESCRIPTION • 25, 35, 45, and 55 ns Read Access & R/W Cycle Times The Simtek STK11C68 is a 64Kb fast static RAM with a nonvolatile Quantum Trap storage element included with each memory cell. • Unlimited Read/Write Endurance

SMD5962

Contextual Info: STK11C68-5 SMD5962-92324 64 Kbit (8 K x 8) SoftStore nvSRAM Features Functional Description • 35 ns, 45 ns, and 55 ns access times ■ Pin compatible with industry standard SRAMs ■ Software initiated nonvolatile STORE ■ Unlimited Read and Write endurance

STK11C68-5K55M

Contextual Info:  STK11C68-5 SMD5962-92324 64 Kbit (8K x 8) SoftStore nvSRAM Features Functional Description • 35 ns, 45 ns, and 55 ns access times ■ Pin compatible with industry standard SRAMs ■ Software initiated nonvolatile STORE ■ Unlimited Read and Write endurance

Contextual Info: STK12C68-5 SMD5962-94599 64 Kbit (8 K x 8) AutoStore nvSRAM Features Functional Description • 35 ns and 55 ns access times ■ Hands off automatic STORE on power down with external 68 µF capacitor ■ STORE to QuantumTrap nonvolatile elements is initiated

taa 723

Abstract: MO-041
Contextual Info: STK11C68-5 SMD5962-92324 64 Kbit (8K x 8) SoftStore nvSRAM Features Functional Description • 35 ns, 45 ns, and 55 ns access times ■ Pin compatible with industry standard SRAMs ■ Software initiated nonvolatile STORE ■ Unlimited Read and Write endurance

CDIP28

Abstract: STK12C68-SF45 STK12C68 sddc SMD5962-9459903MXX SMD5962 STK12C68-5L35M STK12C68-SF45I
Contextual Info: STK12C68 SMD5962-94599 8Kx8 AutoStore nvSRAM FEATURES DESCRIPTION • 25, 35, 45, 55 ns Read Access & Write Cycle Time The Simtek STK12C68 is a 64Kb fast static RAM with a non-volatile Quantum Trap storage element included with each memory cell. • Unlimited Read/Write Endurance

Contextual Info: SRAM AS8S128K32 128K x 32 SRAM PIN ASSIGNMENT SRAM MEMORY ARRAY Top View AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-95595: -Q • SMD 5962-93187: -P or -PN • MIL-STD-883 FEATURES • Access times of 15, 17, 20, 25, 35, and 45 ns • Built in decoupling caps for low noise operation

7801301

Abstract: SMD5962-7801301XC MSK0002H 7801-301XC LH0002 MSK0002
Contextual Info: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 0002 HIGH SPEED, BUFFER AMPLIFIER AMP 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: Industry Wide LH0002 Replacement High Input Impedance-180KΩ Min Low Output Impedance-10Ω Max

SMD-5962-89696

Contextual Info: Tem ic Semiconductors 64 K x 1 High Speed CMOS SRAM HM 65787 Short description. Please refer to the full datasheet available on TEMIC web for detailed technical information. Introduction The HM 65787 is a high speed CMOS static RAM organized as 65536 x 1 bit. It is manufactured using

b883

Contextual Info: Tem ic HM 65797 S e m i c o n d u c t o r s 256 K x 1 High Speed CMOS SRAM Short description. P lease refer to the full datasheet available on T EM IC w eb for detailed technical inform ation. Introduction T he H M 65797 is a high speed CM O S static RA M

Contextual Info: SRAM AS8S128K32 Austin Semiconductor, Inc. 128K x 32 SRAM PIN ASSIGNMENT SRAM MEMORY ARRAY Top View 68 Lead CQFP (Q & QT) AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-95595: -Q or -QT • SMD 5962-93187: -P or -PN • MIL-STD-883 FEATURES • Access times of 20, 25, 35, 45 ns

Contextual Info: ASI A ustin S em iconductor, Inc. 128K x 32 SRAM PIN ASSIGNMENT SRAM MEMORY ARRAY Top View 68 Lead CQFP (Q & QT) AVAILABLE AS MILITARY SPECIFICATIONS 987é543216867666564636261 60]1/D16 I/DO[ 10 59]I/D17 I/DI[ 11 58]I/D18 I/D2[ 12 I/D3[ 13 57]1/D19 I/D4[ 14

5962-9559506HAA

Abstract: 702 smd AS8S128K32 5962-9559507HAA MICROSS SQUARE 5962-9559510HMC
Contextual Info: SRAM AS8S128K32 128K x 32 SRAM PIN ASSIGNMENT SRAM MEMORY ARRAY Top View AVAILABLE AS MILITARY SPECIFICATIONS 68 Lead CQFP (Q & Q1) • SMD 5962-95595: -Q • SMD 5962-93187: -P or -PN • MIL-STD-883 FEATURES • Access times of 15, 17, 20, 25, 35, and 45 ns

M67132

Contextual Info: Temic Semiconductors 2 K x 8 CMOS Dual Port RAM M67132/M67142 Description The M67132/67142 are very low power CMOS dual port static RAMs organized as 2048 x 8. They are designed to be used as a stand-alone 8 bit dual port RAM or as a combination MASTER/SLAVE dual port for 16 bits or

Contextual Info: HS-1245RH H A R R IS a S E M I C O N D U C T O R Radiation Hardened, Dual, High Speed, Low Power Video Operational Amplifier with Output Disable August 1996 Description Features • The HS-1245RH is a radiation hardened dual high speed, low power current feedback amplifier built with Harris’ propri­

Contextual Info: P4C163/P4C163L ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS -FEATURES • Full CMOS, 6T Cell ■ Single 5V±10% Power Supply ■ High Speed Equal Access and Cycle Times - 25/35ns (Commercial)

W3J2256M72-XPBX

Abstract: W3J128M64G-XPBX DDR1 512M W3J128M72G-XPBX 256mb EEPROM Memory ddr3 sdram chip 128mb W3H128M72 w3j128m72 BGA NAND Flash W72M64VB-XBX
Contextual Info: Microelectronics Catalog Quick Reference Guide Extended Temperature Plastics — Memories DDR3 SDRAM MCPs Size 1GB 1GB 2GB 4GB Organization 128M x 64 128M x 72 256M x 72 512M x 72 Part Number W3J128M64G-XPBXƒ W3J128M72G-XPBXƒ W3J256M72G-XPBX* W3J2256M72-XPBX*

Contextual Info: P4C116 ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS -FEATURES • Full CMOS, 6T Cell ■ Output Enable Control Function ■ High Speed Equal Access and Cycle Times -10/12/15/20/25/35 ns (Commercial) -15/20/25/35 ns (Military)

Contextual Info: P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM x i- FEATURES • Full CMOS, 6T Cell ■ Single 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times

54acs164245

Abstract: 5962R9858008VYC 54ACS164 RHRAC164245K1 54ac164245 RHFAC164245K1
Contextual Info: 54AC164245 Rad-hard 16-bit transceiver, 3.3 V to 5 V bidirectional level shifter Datasheet − production data Features • Fully compatible with 54ACS164245 ■ Dual supply bidirectional level shifter ■ Extended voltage range from 2.3 V to 5.5 V ■ Separated enable pin for 3-state output

65788

Contextual Info: Tem ic HM 65788 Semi co n du ct o rs 16 K X 4 High Speed CMOS SRAM Short description. Please refer to the full datasheet available on TEMIC web for detailed technical information. Introduction The HM 65788 is a high speed CMOS static RAM organized as 16384 x 4 bits. It is manufactured using