11C68 Search Results

Contextual Info: STK SlfïlTEH 11C68-M CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM MIL-STD-883/SMD # 5962-92324 FEATURES DESCRIPTION • 35, 45 and 55ns Access Times The Simtek 11C68-M is a fast static RAM 35, 45 and 55ns , with a nonvolatile electrically-erasable p r o m

f 9444

Abstract: Stk Ic Data Software d 1667 STK11C68 t19l Plastic 28-pin 300 mil SOIC SIMTEK
Contextual Info: MAX 8 '93* S T K 11C68 SliTìTGK CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM FEATURES DESCRIPTION • • • • • • • • • • • • • • • The Simtek 11C68 is a fast static RAM 25, 30, 35, 45 and 55ns , with a nonvolatile electrically-erasable PROM

0DG020

Contextual Info: SIMTEK CORP b2E D 0274667 DDDD11B 443 STK 11C68 FEATURES 25, 30, 35 and 45ns Access Times 12,15, 20 and 25ns Output Enable Access Unlimited Read and Write to SRAM Software STORE Initiation Automatic srOflETiming 104 or 10s STORE cycles to EEPROM 10 year data retention in EEPROM

Contextual Info: S T K 11C68A SlfTìTEK CMOS/SNOS nvSRAM High Performance 8K x 8 Non-Volatile Static RAM PRELIMINARY FEATURES DESCRIPTION • • • • • • • • • • • • • • • The Simtek 11C68A is a fast static RAM 35, 45 and 55ns , with a non-volatile electrically-erasable PROM

DS3235

Abstract: DS3600 DS3235-1 PNC11 P10C68 P11C68 PNC10C68 PNC11C68
Contextual Info: s» 5 Ë GEC PLESSEY MARCH 1993 PRELIMINARY INFORMATION S E M I C O N D U C T O R S D S 3 6 0 0 - 1 .5 P 1 0 C 6 8 /P 1 1 C 6 8 Previously PNC10C68 and 11C68 CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM (Supersedes DS3159-1.3, DS3160-1.3, DS3234-1.1, DS3235-1.1)

Contextual Info: 1 1 23456789A2345678B1 1CDEF11B17E1E17161 1 1 1 1 1 1 1 1 !B7"#8$#%9&1 $'

14C88

Abstract: 14CA8 sonos 22C48 Plastic 28-pin 300 mil SOIC SIMTEK 16C88 11C68 12c68 130nm CMOS SONOS flash memory
Contextual Info: COMPANY OVERVIEW nvSRAM Features • Unlimited Writes and Reads Simtek Corporation NASDAQ : SMTK , headquartered in Colorado Springs, Colorado, delivers unique integrated NV + SRAM memory products that solve the tough write endurance problems in a variety of applications. Our customers

11C68

Abstract: 5962-9232404MYA QML-38535 5962-92324 STK11C68-C55M GDIP4-T28
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Update drawing to current requirements. Editorial changes throughout. Gap 01-05-01 Raymond Monnin B Boilerplate update and part of five year review. tcr 06-05-18 Raymond Monnin REV SHEET REV B B B B B B

PS2375

Contextual Info: JUNE 1990 ] P ] L E S§ S I E ^ Ï ^ S E M IC O N D U C T O R S PRELIMINARY INFORMATION -^ = — 11C68 CMOS/SNOS nvSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM Supersedes May 1990 edition The 11C68 is a fast static RAM (25, 30, 35 and 45 ns), with a non-volatile

qml-38535

Contextual Info: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA Update drawing to current requirements. Editorial changes throughout. Gap 01-05-01 APPROVED Raymond Monnin REV SHEET REV A A A A A A A A SHEET 15 16 17 18 19 20 21 22 REV STATUS REV A A A A A A A A A A A A A A OF SHEETS

Contextual Info: 11C68 SlfTITEK CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM FEATURES DESCRIPTION • • • • • • • • • • • • • The Simtek S T K 11C 68 is a fast static RAM 2 5 ,3 0 ,3 5 , 45ns , with a nonvolatile electrically-erasable PROM

ph 687

Contextual Info: COMPONENT R E S E A R C H Component Research CO I tSE D • S3D31H DD0072i 1M ■ L 1 1 1 METALLIZED m i TEFLON c a p a c ito r w ^ H l l S P E C IF IC A T IO N S CONSTRUCTION Metallized teflon dielectric, hermetically sealed, extended metal film electrodes, axial

Contextual Info: GEC PLESSEY SEMICONDS 4bE D 37bfiSS5 Q Q l b 1^ GEC P L E S S E Y T «PLSB T - * /4 r 2 & - l2 L MARCH 1992 SEMICONDUCTORS PRELIMINARY INFORMATION DS3235 1.1 11C68 INDUSTRIAL GRADE CMOS/SNOS nvSRAM HIGH PERFORMANCE 8Kx8 NON-VOLATILE STATIC RAM The 11C68 is a fast static RAM 35 and 45 ns , with a

Contextual Info: METALIZED POLYPROPYLENE TY PIC A L C H A R A C T E R IST IC S: CAPACITANCE VS TEM PERATURE % C AP A C IT A N C E CHANGE T E M P ERA T U RE: RATED VOLTAGE FROM -55°C to +85°C; TO +105°C WITH 50% VOLTAGE DERATING. D IE L E C T R IC V O L T A G E TEST: WILL WITHSTAND THE APPLICATION OF