SI1304 Search Results

Contextual Info: Si1304BDL Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.270 at VGS = 4.5 V 0.90 0.385 at VGS = 2.5 V 0.75 VDS (V) 30 Qg (Typ.) 1.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si1304DL

Abstract: Si1304DL-T1
Contextual Info: Si1304DL Vishay Siliconix N-Channel 25-V D-S MOSFET PRODUCT SUMMARY VDS (V) 25 rDS(on) (W) ID (A) 0.350 @ VGS = 4.5 V 0.75 0.450 @ VGS = 2.5 V 0.66 Qg (Typ) 13 1.3 SOT-323 SC-70 (3-LEADS) G 1 3 S D KB XX YY Marking Code Lot Traceability and Date Code 2 Part # Code

Contextual Info: Si1304DL New Product Vishay Siliconix N-Channel 25-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.350 @ VGS = 4.5 V 0.75 0.450 @ VGS = 2.5 V 0.66 25 SOT-323 SC-70 (3-LEADS) G 1 S D KB XX YY Marking Code 3 Lot Traceability and Date Code 2 Part # Code

Contextual Info: LTC2977 CH0 Power Stage R9 3.01k GND 2 4 VIN SW 3 1 L1 4.7uH MIKE P. 06-18-13 2 U2 LTC3405AES6 Q9 SI1304 VOUT_CH0 R87 470 1210 3 1 VDD GND C57 22u/10V 1210 GND P1 GREEN R1 100k CH0 1.2V C6 10u/10V 1210 6 MODE RUN 1 5 VFB GND 2 4 VIN SW 3 1 2 RUN 1 5 VFB 2

Si1304DL

Contextual Info: SPICE Device Model Si1304DL Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

74133

Abstract: Si1304BDL
Contextual Info: SPICE Device Model Si1304BDL Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

mosfet marking kf

Abstract: SI1304BDL
Contextual Info: Si1304BDL New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.270 @ VGS = 4.5 V 0.90 0.385 @ VGS = 2.5 V 0.75 VDS (V) 30 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) RoHS COMPLIANT 11 1.1 SC-70 (3-LEADS)

Si1304DL

Abstract: Si1304DL-T1
Contextual Info: Si1304DL Vishay Siliconix N-Channel 25-V D-S MOSFET PRODUCT SUMMARY VDS (V) 25 rDS(on) (W) ID (A) 0.350 @ VGS = 4.5 V 0.75 0.450 @ VGS = 2.5 V 0.66 Qg (Typ) 13 1.3 SOT-323 SC-70 (3-LEADS) G 1 3 S D KB XX YY Marking Code Lot Traceability and Date Code 2 Part # Code

Si1304DL

Abstract: Si1304DL-T1 41774
Contextual Info: Si1304DL Vishay Siliconix N-Channel 25-V D-S MOSFET PRODUCT SUMMARY VDS (V) 25 rDS(on) (W) ID (A) 0.350 @ VGS = 4.5 V 0.75 0.450 @ VGS = 2.5 V 0.66 Qg (Typ) 13 1.3 SOT-323 SC-70 (3-LEADS) G 1 3 S D KB XX YY Marking Code Lot Traceability and Date Code 2 Part # Code

Si1304DL

Contextual Info: Si1304DL New Product Vishay Siliconix N-Channel 25-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.350 @ VGS = 4.5 V 0.75 0.450 @ VGS = 2.5 V 0.66 25 SOT-323 SC-70 (3-LEADS) G 1 S D KB XX YY Marking Code 3 Lot Traceability and Date Code 2 Part # Code

SI1304BDL

Abstract: 347mW
Contextual Info: Si1304BDL Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.270 at VGS = 4.5 V 0.90 0.385 at VGS = 2.5 V 0.75 VDS (V) 30 Qg (Typ.) 1.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Transistor 4733

Abstract: AN609 Si1304BDL 911-350
Contextual Info: Si1304BDL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si1304BDL Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.270 at VGS = 4.5 V 0.90 0.385 at VGS = 2.5 V 0.75 VDS (V) 30 Qg (Typ.) 1.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si1304BDL

Abstract: SI1304BDL-T1-E3 mosfet marking kf
Contextual Info: Si1304BDL New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.270 @ VGS = 4.5 V 0.90 0.385 @ VGS = 2.5 V 0.75 VDS (V) 30 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) RoHS COMPLIANT 11 1.1 SC-70 (3-LEADS)

Si1304BDL-T1-E3

Abstract: 0645 SI1304BDL-T1-GE3 sc 0645 Si1304BDL mosfet marking kf SI1304BDLT1E3
Contextual Info: Si1304BDL Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.270 at VGS = 4.5 V 0.90 0.385 at VGS = 2.5 V 0.75 VDS (V) 30 Qg (Typ.) 1.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si1304BDL

Contextual Info: Si1304BDL New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.270 @ VGS = 4.5 V 0.90 0.385 @ VGS = 2.5 V 0.75 VDS (V) 30 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) RoHS COMPLIANT 11 1.1 SC-70 (3-LEADS)

74133

Abstract: Si1304BDL
Contextual Info: SPICE Device Model Si1304BDL Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: User's Guide SNVU189A – October 2012 – Revised May 2013 AN-2298 LM8335 Evaluation Module EVM 1 Introduction The Texas Instruments LM8335EVM evaluation module (EVM), Figure 1, helps designers evaluate the operation and performance of the LM8335 MIPI RFFE to General Purpose Output (GPO) Expander. The

transistor MN1

Abstract: GRM21BR71E225KA73L GRM033R60J104 sumida hp lcd inverter pin diagram GMK107BJ105KA-T GRM31CR71E106KA12L led INVERTER lcd sumida GRM033R60J104KE19D IR05H40CSPTR GRM21BR71E225KA73
Contextual Info: LT3587 High Voltage Monolithic Inverter and Dual Boost FEATURES DESCRIPTION n The LT 3587 provides a one chip solution for applications requiring two positive and one negative high voltage supplies. The LT3587 input voltage range of 2.5V to 6V makes it ideal for various battery-powered systems.

LPS4018-332LM

Abstract: LPS4018-332LM coilcraft Si2333 LT3587 design ideas C2012X5R0J226M IR05H40CSPTR LTC2630 LTC3586 Si1304BDL
Contextual Info: L DESIGN IDEAS Complete Power Solution for Digital Cameras and Other Complex Compact Portable Applications by Brian Shaffer Introduction Digital cameras, portable GPS systems, MP3 players and other feature-rich mobile devices have complicated power requirements. In these complex

high power white led driver circuit diagram

Abstract: TDK 4.7uh 2.2uf 25V 0603 schematic diagram led high bright driver white LED diode Fly DS 100 LED WHITE 20mA 3.6V LED with 3v INPUT VOLTAGE Murata LQH32CN*M11 white led driver
Contextual Info: SP6682 High Efficiency Charge Pump Regulator for White LEDs FEATURES • Ideal For White LED Driver ■ Low Profile, Inductorless Regulator ■ X1.5 and X2 Modes for Highest Efficiency ■ +2.7V to +5.5V Input Voltage Range ■ Fast Turn-On Time, 175µS

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

BS250KL-TR1-E3

Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8

SP6682

Contextual Info: SP6682 High Efficiency Charge Pump Regulator for White LEDs FEATURES • Ideal For White LED Driver ■ Low Profile, Inductorless Regulator ■ X1.5 and X2 Modes for Highest Efficiency ■ +2.7V to +5.5V Input Voltage Range ■ Fast Turn-On Time, 175µS