SDF04 Search Results

Contextual Info: [PRODUCT ^litron CÂTÂLO' N-CHANNEL ENHANCEMENT MOS FET 6 0 V , 3 0 A , 0.04 0 ABSOLUTE MAXIMUM RATINGS SDF044 SDF044 PARAMETER JAA JAB FEATURES • RUGGED PACKAGE • HI-REL CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS

PBP205

Abstract: GBPC602 GBPC802 W04 SMD KBP153 MB-104 RD154 PBP152 DB-102M GBPC810
Contextual Info: BRIDGE CROSS REFERENCE GEN. INST. DIODES INC LITE ON RECTRON DB101GM DB102GM DB103GM DB104GM DB105GM DB106GM DB107GM DF005S DF01S DF02S DF04S DF06S DF08S DF01S SDF005 SDF01 SDF02 SDF04 SDF06 SDF08 SDF10 PBDF101S PBDF102S PBDF103S PBDF104S PBDF105S PBDF106S

Contextual Info: SDF04N06 Green Product S a mHop Microelectronics C orp. Ver 1.2 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS ID 600V 4A R DS(ON) ( Ω) Max Rugged and reliable. 2.5 @ VGS=10V

TEDRA

Abstract: SDF044
Contextual Info: PRODUCT CATTALO ^ » l i t r o n D EVICES.IN C. N-CHANNEL ENHANCEMENT MÜS FET 60V, 30A, 0.04 0 SDF044 JAA SDF044 JAB FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS

Contextual Info: Æ lltran N-CHANNEL ENHANCEMENT MÜS FET 60V, 30 A, 0.04 0 SDF044 SDF044 VDSS 60 V dc VOGR 60 V dc ±20 Vdc Ade Gate-Source Voltage Con t i n u ou s D rain C urrent Continuous T c = 25°c SCHEMATIC TERMINAL Total Power Pulsed(3) D issipation 1 ID 30 1DM

Contextual Info: SDF044JAAVGD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)30 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)210 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)100 Minimum Operating Temp (øC)-55

Contextual Info: SDF044JABVGD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)30 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)210 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)100 Minimum Operating Temp (øC)-55

SDF04N60

Abstract: f04n6
Contextual Info: SDP/F04N60 Green Product S a mHop Microelectronics C orp. Preliminary 600V N-Channel Planar MOSFET FEATURES PRODUCT SUMMARY V DSS 600V ID 4.5A G D S Fast Switching. R DS ON (m Ω) Max 100% Avalanche Rated. 2.5 @ VGS=10V,ID=2.25A TO-220 TO-220F G D S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )