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    F04N6 Search Results

    F04N6 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge CJPF04N65
    		JCET Group N-Channel Power MOSFET CJPF04N65 with 650V drain-source voltage, 4.0A continuous drain current, 2.5 ohm typical RDS(on) at 10V VGS, low gate charge, and avalanche energy rated at 280mJ. Original PDF
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    F04N6 Price and Stock

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    onsemi NDF04N60ZH

    MOSFET N-CH 600V 4.8A TO220FP
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    onsemi NDF04N60ZG

    MOSFET N-CH 600V 4.8A TO220FP
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    Rochester Electronics NDF04N60ZG 53,772 1
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    Chip Stock NDF04N60ZG 32,700
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    Win Source Electronics NDF04N60ZG 29,200
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    onsemi NDF04N62ZG

    MOSFET N-CH 620V 4.4A TO220FP
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    Rochester Electronics NDF04N62ZG 7,334 1
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    NXP Semiconductors N74F04N,602

    IC INVERTER 6CH 1-INP 14DIP
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    Rochester Electronics N74F04N,602 25,796 1
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    onsemi NDF04N60ZG-001

    MOSFET N-CH 600V 4.8A TO-220FP
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    F04N6 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SDF04N60

    Abstract: f04n6
    Contextual Info: SDP/F04N60 Green Product S a mHop Microelectronics C orp. Preliminary 600V N-Channel Planar MOSFET FEATURES PRODUCT SUMMARY V DSS 600V ID 4.5A G D S Fast Switching. R DS ON (m Ω) Max 100% Avalanche Rated. 2.5 @ VGS=10V,ID=2.25A TO-220 TO-220F G D S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )


    Original     		SDP/F04N60 O-220 O-220F SDP04N60 O-220/220F SDF04N60 f04n6 PDF