SD56120 Search Results

M252

Abstract: SD56120M
Contextual Info: SD56120M RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSHPULL • POUT = 120 W WITH 13 dB gain @ 860 MHz /32V • BeO FREE PACKAGE M252 epoxy sealed

J 3488

Contextual Info: SD56120M RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSHPULL • POUT = 120 W WITH 13 dB gain @ 860 MHz /32V • BeO FREE PACKAGE M252 epoxy sealed

SD56120

Abstract: XSD56120 m246
Contextual Info: SD56120 RF POWER TRANSISTORS The LdmoST FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • ■ ■ ■ EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL POUT = 100 W PEP WITH 13 dB GAIN @ 860 MHz BeO FREE PACKAGE DESCRIPTION

Contextual Info: SD56120M RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 120W with 13dB gain @ 860MHz / 32V ■ BeO free package ■

200B

Abstract: 700B SD56120 balun 50 ohm
Contextual Info: SD56120 RF power transistor, the LdmoST family Features • Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 100 W with 14 dB gain @ 860 MHz ■ BeO-free package Description The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power

Contextual Info: SD56120M RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSHPULL • POUT = 120 W WITH 13 dB gain @ 860 MHz /32V • BeO FREE PACKAGE M252 epoxy sealed

balun 50 ohm

Abstract: 200B 700B JESD97 SD56120 TSD56120
Contextual Info: SD56120 RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 100W with 14dB gain @ 860MHz ■ BeO free package Description

860mhz 100w

Abstract: SD56120 XSD56120 m246
Contextual Info: SD56120 RF POWER TRANSISTORS The Lc//77oS7"FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION, PUSH-PULL . P o u t = 100 W PEP WITH 13 dB GAIN @ 860 MHz . BeO FREE PACKAGE DESCRIPTION The SD56120 is a common source N-Channel

JESD97

Abstract: M252 SD56120M
Contextual Info: SD56120M RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 120W with 13dB gain @ 860MHz / 32V ■ BeO free package ■

GP140

Abstract: GP 140 M252 SD56120M
Contextual Info: SD56120M RF POWER TRANSISTORS The LdmoST FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSHPULL • POUT = 120 W WITH 13 dB gain @ 860 MHz /28V • BeO FREE PACKAGE M252 epoxy sealed

100 pf, ATC Chip Capacitor 100A

Abstract: M252 SD56120M
Contextual Info: SD56120M RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSHPULL • POUT = 120 W WITH 13 dB gain @ 860 MHz /32V • BeO FREE PACKAGE M252 epoxy sealed • INTERNAL INPUT MATCHING

Contextual Info: SD56120M RF POWER TRANSISTORS The LdmoST FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSHPULL • POUT = 120 W WITH 13 dB gain @ 860 MHz /32V • BeO FREE PACKAGE M252 epoxy sealed

balun 50 ohm

Abstract: 200B 700B SD56120 TSD56120 860 z2 resistor 47 ohm
Contextual Info: SD56120 RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL • POUT = 100 W WITH 14 dB GAIN @ 860 MHz M246 epoxy sealed • BeO FREE PACKAGE

Contextual Info: SD56120 RF power transistor, the LdmoST family Features • Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 100 W with 14 dB gain @ 860 MHz ■ BeO-free package Description The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power

air variable capacitor

Abstract: carbon variable resistor variable capacitor 100 ohm Variable Resistor 1/4W capacitor ceramic variable RF capacitor variable Z1 SURFACE MOUNT 200B 700B SD56120
Contextual Info: SD56120 RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL • POUT = 100 W WITH 14 dB GAIN @ 860 MHz M246 epoxy sealed • BeO FREE PACKAGE

200B

Abstract: 700B SD56120
Contextual Info: SD56120C RF power transistor, the LdmoST family Features • Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 100 W with 14 dB gain @ 860 MHz ■ BeO-free package Description The SD56120C is a common source N-Channel enhancement-mode lateral Field-Effect RF power

SD56120

Abstract: XSD56120 0660H m246
Contextual Info: SD56120  RF POWER TRANSISTORS The LdmoST FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • ■ ■ ■ EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL POUT = 100 W PEP WITH 13 dB GAIN @ 860 MHz BeO FREE PACKAGE DESCRIPTION

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Contextual Info: 10 0 . 15 MAX. CUT-OFF LENGTH \-M— x p| f p| bc-rr-H-rf 4 • = B TP" Q r SECTION A -A SECTION B -B s ib NOTES 1 MATERIAL 0 /v rMI (tSJP ’ 0 o 2 ) PHOSPHOR BRONZE (THICKNESS :0.2) TERMINAL PLATING : ^ 'V io . 2 5 CONTACT AREA : GOLD JEBinE o CRIMP AREA : TIN

SO42

Abstract: STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier
Contextual Info: RF Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions RF LDMOS HF to 1000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Mobile Radio and 900 MHz Cellular Applications P/N PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002

200W PUSH-PULL

Abstract: cw 180 LDU200-S power 470-860mhz w SD56120M thermal compound wps TRANSCLAMP-1
Contextual Info: LDU200-S 200W peak sync LDMOS Technology Designed for anolog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and push-pull LDMOS to enhance ruggedness and reliability. • • • • 470 - 860 MHz 28 ÷32 Volt 32 Nominal

filter for GPS spice

Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
Contextual Info: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率

MPF102 spice model

Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
Contextual Info: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for

05612

Contextual Info: This document was generated on 01/18/2011 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Description: Replacement Part Number: 0561208590 Contact Molex CRC Shielded Rectangular I/O Female Terminal, Signal, Bag 561208528 Documents: