SD3443 Search Results

sd5443 phototransistor

Abstract: SE5450 SD3443 SD5443 SE3450
Contextual Info: SD3443/5443 Silicon Phototransistor SWITCHING TIME TEST CIRCUIT SWITCHING WAVEFORM cir_03b.cdr Fig. 1 Responsivity vs Angular Displacement SD3443 Fig. 2 gra_052.ds4 Relative response 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Relative response cir_004.cdr

SD5443-002

Contextual Info: SD3443/5443 Silicon Phototransistor FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 18° nominal acceptance angle option • Wide operating temperature range (-55°C to +125°C) • External base connection for added control

SD5433

Abstract: SD3443 SD5443 SE3450 SE5450 phototransistor 302
Contextual Info: SD3443/5443 Silicon Phototransistor FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90¡ or 18¡ nominal acceptance angle option • Wide operating temperature range (- 55¡C to +125¡C) • External base connection for added control

SD5433

Abstract: all datasheet phototransistor SD3443 SE5450 SD5443 SE3450 sd5443 phototransistor
Contextual Info: 17 September 1997 SD3443/5443 Silicon Phototransistor FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90¡ or 18¡ nominal acceptance angle option • Wide operating temperature range (-55¡C to +125¡C) • External base connection for added control

SD5443-003

Abstract: SD3443 SD-3443-1
Contextual Info: SD3443/5443 Silicon Phototransistor FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 18° nominal acceptance angle option • Wide operating temperature range (-55°C 1o+125°C) • External base connection for added control

Contextual Info: SD3443/5443 Silicon Phototransistor FEATURES • TO-46 metal can package » Choice of flat window or lensed package • 90° or 18° nominal acceptance angle option • Wide operating temperature range (-55°C to +125°C) • External base connection for added control

SD3443

Abstract: SD3443-001 SD3443-002 SD5443
Contextual Info: SD3443/5443 Silicon Phototransistor INFRA-57.TIF FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 18° nominal acceptance angle option • Wide operating temperature range (-55°C to +125°C) • External base connection for added control

n11a

Abstract: 101S UHP4
Contextual Info: SD3443/5443 Silicon Phototransistor FEATURES • TO-4-6 metal can package ' C hdce ol [Ut window or lensed package • 90r or 18’ rcminalj acceptance angle oplion ' Wide operating temperature range (- 55 'C lo+125'C j ' External base connection for added control

SD-3443-1

Abstract: sd5443 phototransistor
Contextual Info: SD3443/5443 Silicon Phototransistor FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 16° nominal acceptance angle option • Wide operating temperature range (-55°C to +125°C) • External base connection for added control

Contextual Info: SE3455/5455 GaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° nominal beam angle option • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C) • Ideal for high pulsed current applications

Infrared Emitting Diode

Abstract: SD3443 SD5443 SD5600 SE3470 SE5470
Contextual Info: SE3470/5470 AlGaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90¡ or 20¡ nominal beam angle option • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Wide operating temperature range

A 69157 scr

Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
Contextual Info: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer

SD-5421-2

Abstract: 5455-1 Sensor* spx SE-1450-4 sd 1450-1 34222 SE-2460-3 SE-5455-2 SE-5455-3 SPX2762
Contextual Info: LED's INFRARED R e v e rse O u tp u t Type pow er at P o (m W ) m in . SE SE SE SE 1450-1* 1450-2* 1450-3* 1450-4* S E 2460-1 S E 2460-2 S E 2460-3 Beam S p e c if ie d fo r w a r d c u r r e n t a n g le d ro p l F( m A ) (¿ (d e g re e s) V F( v o lt s )

diameter glass lens phototransistor

Contextual Info: SE3470/5470 AlGaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° ' nominal beam angle option • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents

MOC5010

Abstract: MOC7811 TIL31A TIL34A TIL903-1 OP8815 SCS11C3 h2181 TIL99 TIL143
Contextual Info: - Quick-Reference Product Guide Industry Replacement Guide T h e su g g ested r e p la c e m e n ts re p re s e n t w h a t is b e lie v e d to b e e q u iv a le n ts f o r th e p ro d u c ts listed. H a rris a ssu m e s n o re sp o n sibility a n d d o e s n o t g u a ra n te e th a t th e re p la c e m e n ts a re exact, b u t

SE3450

Abstract: SD3443 SD5443 SD5600 SE5450
Contextual Info: SE3450/5450 GaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90¡ or 20¡ nominal beam angle option • 935 nm wavelength • Wide operating temperature range (- 55¡C to +125¡C) • Mechanically and spectrally matched to

infrared diode

Abstract: SE3455 SD3443 SD5443 SD5600 SE5455
Contextual Info: 17 September 1997 SE3455/5455 GaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90¡ or 20¡ nominal beam angle option • 935 nm wavelength • Wide operating temperature range (-55¡C to +125¡C)

SE3450

Abstract: SD3443 SD5443 SD5600 SE5450
Contextual Info: 17 September 1997 SE3450/5450 GaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90¡ or 20¡ nominal beam angle option • 935 nm wavelength • Wide operating temperature range (-55¡C to +125¡C)

infrared diode

Abstract: Infrared Emitting Diode SD3443 SD5443 SD5600 SE3470 SE5470 5443 equivalent
Contextual Info: 17 September 1997 SE3470/5470 AlGaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90¡ or 20¡ nominal beam angle option • 880 nm wavelength • Higher output power than GaAs at equivalent

p8525

Abstract: diode S428 P8526
Contextual Info: Contents Page Page O P TO SCH M ITT D E T E C T O R S INTRODUCTION SD5600/5610. 146 SD5620/5630. 150 SDP8004/8014 . 154

SD-1440-4

Abstract: SPX1878 sdp 8403 SD.3443-3 Sensor spx 6 pin sdp 8403 A sd 1410-4 SD.5443-3 spx 2762
Contextual Info: Phototransistors SILICON Light current Type W at Specified irradiance »[&] Dark current (H-0) io(nA) at Collector Specified breakdown Collector (lc = 100 uA) emitter voltage BVcEo(vOltS) VCE(volts) Emitter breakdown (lc = 100 mA) BVECO(volts) Light current

SE3470-002

Abstract: TO-46 SE5470 SD5600 SE3470 5443 equivalent infrared emitting diode
Contextual Info: Datasheet - SE3470-002 SE3470-002 SE Series AlGaAs Infrared Emitting Diode, TO-46 Metal Can Package Representative photograph, actual product appearance may vary. Features ● ● ● ● Due to regional agency approval requirements, some products may not be

TIL145

Abstract: ge h11a TIL31A TIL33A MOC7811 TIL81 TIL99 TIL903-2 C3012 TIL34A
Contextual Info: Quick-Reference Product Guide Industry Replacement Guide T h e sug g ested r e p la c e m e n ts re p re s e n t w h a t is b e lie v e d to b e e q u iv a le n ts fo r th e p ro d u c ts listed. H a r r is assum es n o re sp o n s ib ilit v a n d d o e s n o t g u a ra n te e th a t th e re p la c e m e n ts a re exact, b u t

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1