SC701 Search Results

Contextual Info: polyfet rf devices SC701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

SC701

Abstract: VDMOS TRANSISTOR S1A
Contextual Info: polyfet rf devices SC701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Contextual Info: polyfet rf devices SC701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Contextual Info: polyfet rf devices SC701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

TB236

Contextual Info: July 18, 2014 TB236 Frequency = 440-520 MHz Pout =20W Gain = 12dB Vds = 28Vdc Idq =600mA Efficiency = 40% SC701 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com July 18, 2014 PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012

SC701

Contextual Info: polyfet rf devices SC701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

Contextual Info: polyfet rf devices SC701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Contextual Info: www.fairchildsemi.com FAN4174 Single, Ultra-Low Cost, Rail-to-Rail I/O, CMOS Amplifier Features at +5V Description • 200µA supply current per amplifier • 5MHz bandwidth • Output swing to within 10mV of either rail • Input voltage range exceeds the rails

MRF255 equivalent

Abstract: motorola mrf Motorola transistors MRF mrf5015 mrf184 MRF151G F2012 DU1230P uf2810p MRF255
Contextual Info: CROSS REFERENCE Click on part No. to retrieve data sheet . 5/22/2005 Motorola POLYFET PHILIPS POLYFET MA/COM PHI POLYFET MRF134 MRF136 MRF137 MRF141 MRF141G PRF134 PRF136 PRF137 SM401 SR401 BLF145 BLF147 BLF175 BLF177 BLF242 MRF148 MRF151 MRF151G SA741 SM341

Contextual Info: www.fairchildsemi.com FAN4174 Single, Ultra-Low Cost, Rail-to-Rail I/O, CMOS Amplifier Features at +5V Description • 200µA supply current per amplifier • 3.7MHz bandwidth • Output swing to within 10mV of either rail • Input voltage range exceeds the rails

FAN4174IP5X_NL

Abstract: SC701 SC70-5 TLV2461 FAN4174 KEB002 KEB011 OPA340
Contextual Info: www.fairchildsemi.com FAN4174 Single, Ultra-Low Cost, Rail-to-Rail I/O, CMOS Amplifier Features at +5V Description • 200µA supply current per amplifier • 3.7MHz bandwidth • Output swing to within 10mV of either rail • Input voltage range exceeds the rails

MMBD201

Abstract: BD201 bd2010 BD301 MMBD2010 318D-03 MMBD101 MMBD2010T1 DIODE WJ SOt23 MMBD3010T1
Contextual Info: MOTOROLA SEMICONDUCTOR — TECHNICAL Order this document bv MMBDIOIOLT1/D DATA MMBDIOIOLTI MMBD2010T~ Switching Diode Pad of the GreenMneTM Portfolio of devices with energy+onsewing traits. This switching diode has the following features: Very Low Leakage s 500 PA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

Contextual Info: GND 20/0. 12BC WH PE01. 5 RD/WH C ll c SP60/0. 12BC R T S LJ RD T FI > PVC06. 0 (BK) CABLE NO. :3070100012-00 S .R > DIMENSIONS ARE IN MILLIMETERS R -& ft £ FIR UNLESS OTHERWISE SPECIFIED TOLERANCES (—M Â ë ) 0.5-6 > 6—30 > 30—120 > 120—315 > 315-1000

MCP79MXT-B3

Abstract: ISL6258A ti c3931 u9701 rtl8211* Reference design L6703 C3931 88E1116R FW643E CS4206A
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,CORNHOLE,K19 ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE

A1516

Abstract: 8M824S45 8M824 8M824S70
Contextual Info: IDT8M824S 1 2 8 K X 8 CMOS STATIC RAM MODULE Integrated Device Technology. Inc. DESCRIPTION: FEATURES: The IDT8M824S is a 128K x 8 high-speed CMOS static RAM constructed on a co-fired ceram ic substrate using four 32K X 8 static RAMs and a FCT139 decoder in leadless chip

ADR01

Abstract: SOT23-52 ADR01BR REF01 sot23 mark code KS ADR02 REF02 SC70-5
Contextual Info: a Ultracompact Precision 10.0 V/5.0 V Voltage References ADR01/ADR02 FEATURES Ultracompact SC70-51/SOT23-5 1 Low Temperature Coefficient, 3 ppm/؇C Long-Term Stability, 50 ppm/1000 hr Line Regulation, 30 ppm/V Load Regulation, 50 ppm/mA Low Noise, 25 ␮V p-p 0.1 Hz to 10 Hz

MGCF21

Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
Contextual Info: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount

SC70-5 G2

Contextual Info: www.fairchildsemi.com FAN4174 Single, Ultra-Low Cost, Rail-to-Rail I/O, CMOS Amplifier Features at +5V Description • 200µA supply current per amplifier • 3.7MHz bandwidth • Output swing to within 10mV of either rail • Input voltage range exceeds the rails

str 6756

Abstract: Asbestos MSDS galvanized iron thermal conductivity ASTM B695 THHN 6 str green 28-09500 S-66-524 Naugahyde SC12N MSDS SC12N
Contextual Info: DIAMOND /SACHS® PRODUCT OVERVIEW PAGES 2-6 Broadband Drop CATV Bonding & Grounding

7805 sot23

Abstract: LDO 7805 7805 sot 82 7805 LDO 7805 SOT-23 linear regulator 7805 7805 so8 sw 7805 7805 to 92 MC78L05AC
Contextual Info: SiDB766707 Vishay Siliconix SiC714CD10 MOSFET Plus Driver Evaluation Board FEATURES • MOSFET Plus Driver PowerPAK MLF 10 x 10 Product Demonstration • 10 V to 14 V Input Voltage • Switching Frequency: 100 kHz to > 1 MHz • Up to 27 A Output Current

UAA 3000

Abstract: FAN4174 UAA 180 FAN4274 KM4170 KM4270 OPA2340 OPA340 SC70-5 TLV2461
Contextual Info: FAN4174/FAN4274 Single and Dual Ultra-Low Cost, Rail-to-Rail I/O, CMOS Amplifiers Features • ■ ■ ■ ■ ■ ■ Description 200µA supply current per amplifier 3.7MHz bandwidth Output swing to within 10mV of either rail Input voltage range exceeds the rails

rf push pull mosfet power amplifier

Abstract: 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941
Contextual Info: polyfet rf devices Broad Band RF Power MOSFET Transistors TB# 178 179 180 181 182 183D 184 185 186 187 188 189 191 192 193A 194 195 196 197 199 200NUM1 201 202 203 204 205 206 207 208 210 211 212 Freq Range 136-174 30-88 50-88 118-165 100-500 1.5-30 1.5-30