SBT54 Search Results

SBT5401

Abstract: SBT5551
Contextual Info: SBT5551 Semiconductor NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.) • Complementary pair with SBT5401

SBT5551F

Abstract: Transistor KST-2097-000 transistor 2097 SBT5401F
Contextual Info: SBT5551F Semiconductor NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.) • Complementary pair with SBT5401F

SBT5401

Abstract: 2sbt5401 SBT5551
Contextual Info: SBT5401 PNP Silicon Transistor Description PIN Connection • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = -160V, VCEO = -160V • Low collector saturation voltage : VCE sat =-0.5V(MAX.) • Complementary pair with SBT5551

sbt5401

Contextual Info: SBT5401 Semiconductor PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = -160V, VCEO = -160V • Low collector saturation voltage : VCE sat =-0.5V(MAX.) • Complementary pair with SBT5551

Contextual Info: Silicon-Based Technology Corp. SBT54T Series Small-Signal Schottky Barrier Diodes SBT54T series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky barrier patents and technologies SBT developed by Silicon-Based Technology Corporation,

Contextual Info: Silicon-Based Technology Corp. SBT54WS Series Small-Signal Schottky Barrier Diodes SBT54WS series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky barrier patents and technologies SBT developed by Silicon-Based Technology Corporation,

SBT5551F

Abstract: SBT5401F SBT5401
Contextual Info: SBT5551F NPN Silicon Transistor Descriptions PIN Connection • General purpose amplifier • High voltage application 3 Features • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.) • Complementary pair with SBT5401F

Contextual Info: Silicon-Based Technology Corp. SBT54W Series Small-Signal Schottky Barrier Diodes SBT54W series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky barrier patents and technologies SBT developed by Silicon-Based Technology Corporation,

Contextual Info: Silicon-Based Technology Corp. SBT54D Series Small-Signal Schottky Barrier Diodes SBT54D series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky barrier patents and technologies SBT developed by Silicon-Based Technology Corporation,

Contextual Info: Silicon-Based Technology Corp. SBT54 Series Small-Signal Schottky Barrier Diodes SBT54 series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky barrier patents and technologies SBT developed by Silicon-Based Technology Corporation,

Contextual Info: SBT5401 PNP Silicon Transistor Description PIN Connection • General purpose am plifier • High volt age applicat ion Features • High collect or breakdown volt age : VCBO = - 160V, VCEO = - 160V • Low collect or sat urat ion volt age : VCE sat = - 0.5V( MAX.)

SBT5401F

Abstract: Transistor SBT5551F
Contextual Info: SBT5401F Semiconductor PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = -160V, VCEO = -160V • Low collector saturation voltage : VCE sat =-0.5V(MAX.) • Complementary pair with SBT5551F

Contextual Info: Silicon-Based Technology Corp. SBT54T Series Small-Signal Schottky Barrier Diodes SBT54T series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky barrier patents and technologies SBT developed by Silicon-Based Technology Corporation,

Contextual Info: SBT5401F PNP Silicon Transistor Description PIN Connection • General purpose am plifier • High volt age applicat ion 3 Features • High collect or breakdown volt age : VCBO = - 160V, VCEO = - 160V • Low collect or sat urat ion volt age : VCE sat = - 0.5V( MAX.)

SBT5401F

Abstract: SBT5551F
Contextual Info: SBT5401F Semiconductor PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = -160V, VCEO = -150V • Low collector saturation voltage : VCE sat =-0.5V(MAX.) • Complementary pair with SBT5551F

3K MARKING CODE

Contextual Info: Silicon-Based Technology Corp. SBT54 Series Small-Signal Schottky Barrier Diodes SBT54 series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky barrier patents and technologies SBT developed by Silicon-Based Technology Corporation,

Contextual Info: Silicon-Based Technology Corp. SBT54WS Series Small-Signal Schottky Barrier Diodes SBT54WS series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky barrier patents and technologies SBT developed by Silicon-Based Technology Corporation,

SOT 363 marking CODE 1f

Abstract: sot-363 material SBT54D marking A2 sot363 sot-363 Marking 260 A2 SOT363
Contextual Info: Silicon-Based Technology Corp. SBT54D Series Small-Signal Schottky Barrier Diodes SBT54D series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky barrier patents and technologies SBT developed by Silicon-Based Technology Corporation,

SBT5401F

Abstract: SBT5551F SBT5401
Contextual Info: SBT5401F PNP Silicon Transistor Description PIN Connection • General purpose amplifier • High voltage application 3 Features • High collector breakdown voltage : VCBO = -160V, VCEO = -160V • Low collector saturation voltage : VCE sat =-0.5V(MAX.) • Complementary pair with SBT5551F

SBT5401

Abstract: SBT5551 Transistor marking 0.5
Contextual Info: SBT5551 NPN Silicon Transistor PIN Connection Descriptions • General purpose amplifier • High voltage application 2 • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.) • Complementary pair with SBT5401

Contextual Info: Silicon-Based Technology Corp. SBT54W Series Small-Signal Schottky Barrier Diodes SBT54W series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky barrier patents and technologies SBT developed by Silicon-Based Technology Corporation,

SBT160W

Abstract: SBT-160W SBT140W SBT1645CT SBT1640CT sbt3030 sbt1640
Contextual Info: Surface-Mount Type Schottky Barrier Rectifiers Part Type Peak Repetitive Max. Average Peak Forward Forward Voltage Max. Reverse Reverse Voltage Rectified Current Surge Current Drop Current Pin-out VF IR Config. ✁✂ I VRRM V IFSM o °C A I F V R A

Contextual Info: SBT5551 NPN Silicon Transistor PIN Connection Descriptions • General purpose am plifier • High volt age applicat ion 2 • high collect or breakdown volt age : VCBO = 180V, VCEO = 160V • Low collect or sat urat ion volt age : VCE sat = 0.5V( MAX.)

S78DM12Q

Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
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