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    TE Connectivity PAS82-28-02-1-B

    - Bulk (Alt: AAE4462-00)
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    Avnet Americas PAS82-28-02-1-B Bulk 16 Weeks, 3 Days 50
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    Master Electronics PAS82-28-02-1-B
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    TE Connectivity 202D253-3-22-0-CS8228

    - Bulk (Alt: 808502N001)
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    Avnet Americas 202D253-3-22-0-CS8228 Bulk 100
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    Sager 202D253-3-22-0-CS8228
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    Chicago Pneumatic S822 (8940164285)

    ACCESSORY, IMPACT SOCKET, S822 1" DR STD 1-3/8
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    RS S822 (8940164285) Bulk 5 Weeks 1
    • 1 $24.44
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    TE Connectivity 202D263-3-22-0-CS8228

    Heat Shrink Cable Boots & End Caps 202D263-3-22-0CS8228
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    TTI 202D263-3-22-0-CS8228 Each 75
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    Sager 202D263-3-22-0-CS8228
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    Mindspeed Technologies Inc RS8228EBG

    PHY 1-CH 0.064Mbps/52Mbps 3.3V 272-Pin BGA
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    Bristol Electronics RS8228EBG 40
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    S8228 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 1.0 Product Description The R S8228 Octal ATM Transm ission Convergence TC PH Y device dram ati­ cally increases the level o f integration for switches and access systems. The R S8228 integrates all o f the ATM Layer processing functions found in the ATM


    OCR Scan     		S8228 af-phy0043 RS8228 N8228DSA PDF

    Contextual Info: SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 40 0.0076 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		SiR468DP SiR468DP-T1-GE3 11-Mar-11 PDF

    Contextual Info: SUD50P06-15 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.015 at VGS = - 10 V - 50d 0.020 at VGS = - 4.5 V d - 50 • Halogen-free • TrenchFET Power MOSFET RoHS COMPLIANT APPLICATIONS • Load Switch


    Original     		SUD50P06-15 O-252 SUD50P06-15-GE3 11-Mar-11 PDF

    Contextual Info: SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 40 0.0076 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		SiR468DP SiR468DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    si4944dy-t1-e3

    Contextual Info: Si4944DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0095 at VGS = 10 V 12.2 0.016 at VGS = 4.5 V 9.4 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested RoHS COMPLIANT


    Original     		Si4944DY Si4944DY-T1-E3 Si4944DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: Si4944DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0095 at VGS = 10 V 12.2 0.016 at VGS = 4.5 V 9.4 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested RoHS COMPLIANT


    Original     		Si4944DY Si4944DY-T1-E3 Si4944DY-T1-GE3 11-Mar-11 PDF

    Contextual Info: SiR850DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.007 at VGS = 10 V 30a 0.009 at VGS = 4.5 V a VDS (V) 25 30 • • • • Qg (Typ.) 8.4 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested


    Original     		SiR850DP SiR850DP-T1-GE3 11-Mar-11 PDF

    A1930

    Contextual Info: SiR850DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.007 at VGS = 10 V 30a 0.009 at VGS = 4.5 V a VDS (V) 25 30 • • • • Qg (Typ.) 8.4 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested


    Original     		SiR850DP SiR850DP-T1-GE3 11-Mar-11 A1930 PDF

    SUD50P06-15

    Abstract: c495-0
    Contextual Info: SUD50P06-15 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.015 at VGS = - 10 V - 50d 0.020 at VGS = - 4.5 V d - 50 • Halogen-free • TrenchFET Power MOSFET RoHS COMPLIANT APPLICATIONS • Load Switch


    Original     		SUD50P06-15 O-252 SUD50P06-15-GE3 11-Mar-11 SUD50P06-15 c495-0 PDF

    SiR850DP-T1-GE3

    Contextual Info: SiR850DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.007 at VGS = 10 V 30a 0.009 at VGS = 4.5 V a VDS (V) 25 30 • • • • Qg (Typ.) 8.4 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested


    Original     		SiR850DP SiR850DP-T1-GE3 15lectual 18-Jul-08 PDF

    Contextual Info: SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 40 0.0076 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		SiR468DP SiR468DP-T1-GE3 18-Jul-08 PDF

    Contextual Info: SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 40 0.0076 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		SiR468DP SiR468DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SiR850DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.007 at VGS = 10 V 30a 0.009 at VGS = 4.5 V a VDS (V) 25 30 • • • • Qg (Typ.) 8.4 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested


    Original     		SiR850DP SiR850DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: New Product SiR492DP Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0038 at VGS = 4.5 V 40 0.0047 at VGS = 2.5 V 40 VDS (V) 12 Qg (Typ.) 41 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Secondary Synchronous Rectification


    Original     		SiR492DP SiR492DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 40 0.0076 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		SiR468DP SiR468DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SC75-6L

    Abstract: 82286
    Contextual Info: New Product SiB419DK Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f, g 0.060 at VGS = - 4.5 V -9 0.082 at VGS = - 2.5 V -9 0.114 at VGS = - 1.8 V -2 VDS (V) - 12 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		SiB419DK SC-75 SC-75-6L-Single SiB419DK-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SC75-6L 82286 PDF

    Contextual Info: Si4421DY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.00875 at VGS = - 4.5 V - 14 0.01075 at VGS = - 2.5 V - 12 0.0135 at VGS = - 1.8 V - 11 • Halogen-free Option Available • TrenchFET Power MOSFET


    Original     		Si4421DY Si4421DY-T1-E3 Si4421DY-T1-GE3 11-Mar-11 PDF

    SO8 C_22

    Contextual Info: Si4421DY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.00875 at VGS = - 4.5 V - 14 0.01075 at VGS = - 2.5 V - 12 0.0135 at VGS = - 1.8 V - 11 • Halogen-free Option Available • TrenchFET Power MOSFET


    Original     		Si4421DY Si4421DY-T1-E3 Si4421DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SO8 C_22 PDF

    Si4944DY-T1-E3

    Abstract: Si4944DY
    Contextual Info: Si4944DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0095 at VGS = 10 V 12.2 0.016 at VGS = 4.5 V 9.4 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested RoHS COMPLIANT


    Original     		Si4944DY Si4944DY-T1-E3 Si4944DY-T1-GE3 18-Jul-08 PDF

    Si4421DY

    Abstract: Si4421DY-T1-E3
    Contextual Info: Si4421DY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.00875 at VGS = - 4.5 V - 14 0.01075 at VGS = - 2.5 V - 12 0.0135 at VGS = - 1.8 V - 11 • Halogen-free Option Available • TrenchFET Power MOSFET


    Original     		Si4421DY Si4421DY-T1-E3 Si4421DY-T1-GE3 20lectual 18-Jul-08 PDF

    82288

    Abstract: SiR492DP
    Contextual Info: New Product SiR492DP Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0038 at VGS = 4.5 V 40 0.0047 at VGS = 2.5 V 40 VDS (V) 12 Qg (Typ.) 41 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Secondary Synchronous Rectification


    Original     		SiR492DP SiR492DP-T1-GE3 18-Jul-08 82288 PDF

    SC-75

    Abstract: SiB419DK SiB419DK-T1-GE3
    Contextual Info: New Product SiB419DK Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f, g 0.060 at VGS = - 4.5 V -9 0.082 at VGS = - 2.5 V -9 0.114 at VGS = - 1.8 V -2 VDS (V) - 12 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		SiB419DK SC-75 SC-75-6L-Single SiB419DK-T1-GE3 11-Mar-11 PDF

    SiR462DP

    Abstract: SiR462DP-T1-GE3
    Contextual Info: SiR462DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0079 at VGS = 10 V 30a 0.010 at VGS = 4.5 V a 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		SiR462DP SiR462DP-T1-GE3 18-Jul-08 PDF

    Contextual Info: New Product SiB419DK Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f, g 0.060 at VGS = - 4.5 V -9 0.082 at VGS = - 2.5 V -9 0.114 at VGS = - 1.8 V -2 VDS (V) - 12 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		SiB419DK SC-75 SC-75-6L-Single SiB419DK-T1-GE3 11-Mar-11 PDF