S6702 Search Results

smd code 9fc

Abstract: smd 2d 1002 -reel smd diode 2d mosfet ir 840 SOT-23 marking 2f p-Channel sot-23 MARKING CODE nm
Contextual Info: bitemational Rectifier PD 9.1414 IR LM S6702 PRELIMINARY HEXFET Power MOSFET • Generation 5 Technology • Micro6 Package Style • Ultra Low Rds on V qss = -20V • P-Channel MOSFET Description Generation 5 HEXFETs from International Recti­ fier utilize advanced processing techniques to

ECM-S6703

Abstract: 3 button optical wheel mouse ECM-S6702 optical wheel mouse ECM-S6702 SENSOR wheel mouse usb Mouse mitsumi ECMS6702 mouse scroll wheel Optical Mouse sensor mitsumi ecm-s6702
Contextual Info: MITSUMI 光学式ホイールマウス Optical Wheel Mouse ECM-S6702（PS/2）/ ECM-S6703（USB） Mouse 概要／OUTLINE Wheel回転によるスクロールと光センサによる光学 式マウスで平面はもとより、被服の上などでも動作

2D 1002 diode

Abstract: SMD MARKING CODE 9b 2b smd diode marking LM smd 2d 1002 -reel S57C3 sot-23 Marking 3D Switching Diode SOT23 Marking 3D smd 2d 1002 S1902 diode Marking Code lm
Contextual Info: PD 9.1508A International IGR Rectifier IR L M S 1503 PRELIMINARY HEXFET Power MOSFET • • • • Generation V Technology Micro6 Package Style Ultra Low Rds on N-Channel MOSFET Voss = 30V R ü s (o n ) = 0 . 1 o n Description Fifth Generation HEXFETs from International Rectifier

S6702

Abstract: IRLM
Contextual Info: International Rectifier HEXFET Power MOSFETs IOR 'd • d V BR DSS Drain-to-Sourte »DS(on) Continuous On-State Drain Current Breakdown Part Voltage Resistance 2S°C Number (V) (A) (a . Continuous Drain Current 70° (A) h R Max. Thermal Max. Power Resistance 1 Dissipation!

105 Thyratron

Abstract: thyratron Scans-0017250
Contextual Info: THYRATRON MERCURY-VAPOR TETRODE DATA -Continuous Service Heater, for Unipotential Cathode: 5.0 Voltage*. 5.0 10.0 Current. 10.0 Direct Interelectrode Capacitance: Grid-No.1 to Anode Approx. 0.3 0.3 16 Peak Voltage Drop (Approx.). .

smd diode marking 47s

Abstract: S41 rectifier smd marking 47s smd code marking sot23 Micro6 Package smd diode marking JJ sot23 G0A marking SMD MOSFET N Z4 lm 5532
Contextual Info: PD 9.1414A International IO R Rectifier IR L M S 6702 PRELIMINARY H EXFET Pow er M O S F E T • Generation V Technology • Micro6 Package Style • Ultra Low Rds on • P-Channel MOSFET V q ss = -2 0 V R DS(on) = 0 . 2 0 Q Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: RECOMMENDED PCB LAYOUT PCB EDGE 4 -4 0 0 1.09*0.05 l- f r l0 a . 2 0 |A ]B ] TYP SCREW A S S E M B L Y o o o o d o o o o o o o p o o o o o o d 8 .3 3*0.25 3 .9 0 ± 0 .2 5 o o o o o o 11.39 | TYP 3.80 ± 0 „2 5 12 .7 7 1 TYP CIRCUIT NUMBER 47.04 •47.04