IRLM Search Results

Contextual Info: Product specification IRLML0040TRPbF VDSS VGS Max RDS on max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) 40 ± 16 V 56 mΩ 78 mΩ HEXFET Power MOSFET V G 1 3 D S Micro3TM (SOT-23) IRLML0040TRPbF 2 Application(s) • Load/ System Switch • DC Motor Drive Features and Benefits

Contextual Info: Product specification IRLML6402PbF l l l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free Halogen-Free G 1 VDSS = -20V 3 D S RDS(on) = 0.065Ω

IRFML9244

Abstract: IRLML6344 IRLML2246 irlml0030 irlml2244 IRLML2502PbF
Contextual Info: IRLML2502PbF l l l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free RoHS Compliant, Halogen-Free G 1 VDSS = 20V 3 D S RDS(on) = 0.045Ω 2 Description

IRLML0060TR

Abstract: IRLML0060TRPBF
Contextual Info: PD - 97439A IRLML0060TRPbF HEXFET Power MOSFET VDS 60 V VGS Max ± 16 V RDS on max 92 m 116 m (@VGS = 10V) RDS(on) max (@VGS = 4.5V) *   ' 6  Micro3TM (SOT-23) IRLML0060TRPbF Application(s) •Load/ System Switch Features and Benefits Benefits

IRLML5103PBF

Abstract: IRLML2246 irlml2030
Contextual Info: IRLML5103PbF l l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free RoHS Compliant, Halogen-Free HEXFET Power MOSFET G 1 VDSS = -30V 3 D

ml2803

Abstract: IRLML2803 IRLML6401 43a sot23 Y1 SOT-23 IRLML6401 SOT-23 IRLML2402 IRLML2502 IRLML5103 IRLML6302
Contextual Info: PD- 93756C IRLML6401 l l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching 1.8V Gate Rated HEXFET Power MOSFET G 1 VDSS = -12V 3 D S RDS(on) = 0.05Ω 2 Description These P-Channel MOSFETs from International Rectifier

IRLML2402

Abstract: EIA-541 7.5v voltage regulator SOT 23
Contextual Info: PD - 91257D IRLML2402 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = 20V G RDS(on) = 0.25Ω S Description Fifth Generation HEXFETs from International Rectifier

IRLMS 4502 D

Abstract: EIA-541 IRLMS2002 IRLMS6702 IRLMS4502
Contextual Info: PD- 93758D IRLMS2002 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel 2.5V Rated A D D 1 6 D 2 5 D G 3 4 S VDSS = 20V RDS on = 0.030Ω Top View Description These N-Channel MOSFETs from International Rectifier

IRLML5203 IR

Abstract: IRLML5203 IRLML5203 H IRLML2803 IRLML2402 IRLML6302
Contextual Info: PD - 93967 PROVISIONAL IRLML5203 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS Ω RDS on) max (mΩ) ID -30V 98@VGS = -10V -3.0A 165@VGS = -4.5V -2.6A Description These P-channel MOSFETs from International Rectifier

IRLMS 4502 D

Abstract: EIA-541 IRLMS6802 P-Channel mosfet 400v 400v p-channel mosfet integral 4502
Contextual Info: PD- 91848E IRLMS6802 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel D A D 1 6 2 5 D 3 4 S VDSS = -20V D G RDS on = 0.050Ω Top View Description These P-Channel MOSFETs from International Rectifier

IRLMS 4502 D

Abstract: marking t12 sot-23 irlms4502 IRLMS2002 2920A
Contextual Info: PD- 93758C IRLMS2002 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel 2.5V Rated A D D 1 6 D 2 5 D G 3 4 S VDSS = 20V RDS on = 0.030Ω T o p V ie w Description These N-Channel MOSFETs from International Rectifier

IRLMS1503

Abstract: AM 22A
Contextual Info: PD - 9.1508C IRLMS1503 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds on N-Channel MOSFET , $ , / Description  Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

6x marking sot-23 p-channel

Abstract: IRLMS4502 IRLMS6702
Contextual Info: PD- 93759A IRLMS4502 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel D 1 6 2 5 3 4 A D VDSS = -12V D G D S RDS on = 0.042Ω T o p V ie w Description These P-Channel MOSFETs from International Rectifier

Contextual Info: IRLML2803PbF-1 HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) 30 V 0.25 Ω 3.3 nC 1.2 A G 1 3 D S 2 Micro3 Features Industry-standard pinout SOT-23 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free

RFT Plattenspieler

Abstract: robotron service-mitteilungen rft servicemitteilung Mitteilung VEB RFT sokol Ms 17 sd mitteilung aus dem veb rft STRALSUND Sonneberg
Contextual Info: SERVICE-MITTEILUNGEN IRlMH r a d i o - Television | AUSGABE: 1986 CM VEB I N DU ST RI EV ERT RI EB R U N D F U N K U N D F E R N S E H E N Mitteilung aus aéra VEB Stern-Kadio Sonneberg HEU IM ANGEBOT Stereo-Compakt-Anlage SC 1900 Das Gerät entspricht einer Zusammenstellung

irlms4502

Contextual Info: PD- 93759 IRLMS4502 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel D A D 1 6 2 5 3 4 VDSS = -12V D G D S RDS on = 0.042Ω T o p V ie w Description These P-Channel MOSFETs from International Rectifier

Contextual Info: MOSFET SMD Type HEXFET Power MOSFET IRLML6401 SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Ultra low on-resistance. 1 0.55 ● Fast switching. +0.1 1.3-0.1 +0.1 2.4-0.1 ● P-Channel MOSFET. 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05

K1 mosfet

Abstract: HEADER 10X2 MOSFET 250Vac mosfet b4 irlml6402 MOSFET N BATTERY HOLDER 2 AA 250VA BAV70LT1 set k2
Contextual Info: 5 4 In battery holder D 3 2 DLP-RF2RELAY JP1 Current Monitor BT1 2x AA batteries Q1 IRLML6402CT P 3VCC 1 2 R1 0 Ohm 1 R5 30K C2 .1uF U1 AN80L21RMS/MINI5D C4 R9 150 1% 1.0uF 3VCC B4 1.0V C B4 VREF21 B2 A6 R6 100 5 SHDN 3 NC 4 GND D VIN 1 VOUT 2 2.1V VREF21

Contextual Info: International muRectifier P D - 9 .1 2 6 0 A IRLML5103 PRELIMINARY H E X F E T P ow er M O S F E T • • • • • • • Generation V Technology Ultra Low On-Resistance P-Channel M O SFET SO T-23 Footprint Low Profile <1.1 mm Available in Tape and Reel

IRLML6346

Abstract: IRLML2246 IRLML2244 IRLML6244 ML8244 IRLML6344 IRLML9303 IRFML9244 IRLML9301TRPBF IRFML8244
Contextual Info: PD - 96310C IRLML9301TRPbF VDS -30 V VGS Max ± 20 V RDS on max 64 mΩ 103 mΩ (@VGS = -10V) RDS(on) max (@VGS = -4.5V) HEXFET Power MOSFET G 1 3 D S 2 Micro3TM (SOT-23) IRLML9301TRPbF Application(s) • System/Load Switch Features and Benefits Benefits

smd diode marking LM

Abstract: IRLMS5703 702 mosfet smd marking Diode smd s6 95
Contextual Info: PD - 9.1413C IRLMS5703 PRELIMINARY HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET D D G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

IRLML6401 SOT-23

Abstract: j y w sot23 irlml2502 IRLML6302 h d 2001 Micro3 IRLML6402 IRLML5203 IRL*5103 IRLML5203 H
Contextual Info: Micro3 SOT-23/TO-236AB W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR Y = YEAR PART NUMBER PART NUMBER CODE REFERENCE: YEAR Y 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 1 2 3 4 5 6 7 8 9 A = IRLML2402 B = IRLML2803 C = IRLML6302 D= E= F= G=

IRD060

Abstract: ir led rx IR131A IR110A jornada 720 d010a ir133 D010 MCP2140 jornada
Contextual Info: MCP2140 通信速率为固定 9600 波特率的 IrDA 标准协议栈控制器 封装类型 特性 • 实现了 IrDA® 标准，包括： - IrLAP - IrLMP - IAS - TinyTP - IrCOMM （9 线 “Cooked”服务级别） • 提供 IrDA 标准物理信令层支持，包括：

irlms4502

Abstract: IRLMS1503 IRLMS1902 IRLMS5703 IRLMS6702 IRLMS6802
Contextual Info: PD - 94893 IRLML2402PbF l l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free HEXFET Power MOSFET D VDSS = 20V G RDS(on) = 0.25Ω S Description