S512X Search Results

Contextual Info: DENSE-PAC MICROSYSTEMS 8 Megabit High Speed CMOS SRAM D S512X 16C n 3/D P S512X 16B n 3 DESCRIPTIO N : The D P S 5 12 X 16Cn3/DPS512 X 16Bn3 High Speed SRAM "STACK" modules are a revolutionary new memory subsystem using Dense-Pac M icrosystems' ceram ic Stackable Leadless Chip Carriers SLCC .

L49XX

Contextual Info: Table of Contents Pg. 2 ACTIVE DELAY LINES TESTING TTL BUFFERED SURFACE MOUNT DL COMM. 8 Pm Mini 5 T ap. S-51-2XX 280 HIGH Pg 3 14 Pin STD 5 Tap . S-76-2XX 250 HIGH Pg 3 14 Pin STD 10 Tap . S-31-2XX .285 HIGH Pg. 3 S-79-5XX .280 HIGH Pg. 4

Contextual Info: S-76-200 SERIES 14-pin Mini 5 Taps 5 Taps arm m a y I— .500 ± .010 U_ MAX 280 -». *] jlDiti jB m S-51-2XX L .io o -j- # I 1 S-76-2XX 'ilh H K 1 “ .11 .020 r— 3 • = u -*|<-.020 20% iO*m 60°i> SO1»» Toiai 5 TAP vcc - p y DELAY TIMES IN NANOSECONDS

Contextual Info: Silicon360 S512 Series SRAMs 512Kx16,x32,x40-bit Radiation Tolerant Static RAM Features: • Fabricated in 90 nm process technology using custom EPI wafers • Total Dose: 300K rads Si • Prompt Dose: No burn out and latch-up; Dose rate ranging from 1.0E9 to

Contextual Info: S512X32AV3 Dense-Pac Microsystems. Inc. ^ H IG H SPEED 512K X 32 C M O S SRAM VERSA-STACK D ESCR IPTIO N : The D P S 5 1 2 X 3 2 A V 3 "V ER S A -STA C K " m odule is a revolutionary n ew high speed m em ory subsystem using D ense-Pac M icrosystem s' ce ram ic Stackable Leadless C h ip Carriers S L C C m ounted on a

A273D

Abstract: 16J3 512X32 48pin
Contextual Info: R E F E R E N C E D R A O RG AN IZA TIO N PART NUMBER SIZE M P R O D 512 M egabit 6 4 0 Megabit 1024 Megabit 1152 Megabit 1152 Megabit S I Î A M P SPEED ns PACKAGE 16M x4 60, 70, 80 26-Pin TStack 19 16M x32 70, 80, 100 72-Pin S IM M 29 DPD16M X32PKW 5 16M x32