RN2611 Search Results

Contextual Info: RN2610,RN2611 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2610,RN2611 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm l Including twodevices in SM6 (super mini type with 6 leads) l With built-in bias resistors

RN1610

Abstract: RN1611 RN2610 RN2611
Contextual Info: RN2610,RN2611 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2610,RN2611 ○ スイッチング用 ○ インバータ用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm z スーパーミニ (6 端子) パッケージに 2 素子を内蔵しています。

RN1610

Abstract: RN1611 RN2610 RN2611
Contextual Info: RN2610,RN2611 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2610,RN2611 Unit in mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including twodevices in SM6 (super mini type with 6 leads) z With built-in bias resistors

RN1610

Abstract: RN1611 RN2610 RN2611
Contextual Info: RN2610,RN2611 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2610,RN2611 Unit in mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including twodevices in SM6 (super mini type with 6 leads)

TRANSISTOR 015G

Abstract: RN2610 015G TOSHIBA Transistor Silicon PNP Epitaxial Type RN1610 RN1611 RN2611
Contextual Info: RN2610,RN2611 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2610,RN2611 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm l Including twodevices in SM6 (super mini type with 6 leads) l With built-in bias resistors

inverter ic marking H.A

Abstract: ic marking YK
Contextual Info: SILICON PNP EPITAXIAL TYPE SW ITCHING, INVERTER CIRCUIT, RN2610, RN2611 INTERFACE CIRCUIT A N D U nit in mm DRIVER + CIRCUIT APPLICATIONS. + 0.2 1. 6 - 0.1 Including Two Devices in SM6 Super Mini Type with 6 leads W ith Built-in Bias Resistors Simplify Circuit Design

Contextual Info: RN2610,RN2611 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2610, RN2611 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including twodevices in SM6 (super mini type with 6 leads)

Contextual Info: RN2610,RN2611 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2610,RN2611 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm z Including twodevices in SM6 (super mini type with 6 leads) z With built-in bias resistors

RN2610

Abstract: RN2611 RN1610 RN1611
Contextual Info: RN2610,RN2611 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2610,RN2611 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm Including twodevices in SM6 (super mini type with 6 leads) With built-in bias resistors

Contextual Info: T O SH IB A RN2610,RN2611 TOSHIBA PHOTOCOUPLER SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2610, RN2611 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Including Two Devices in SM6 (Super Mini Type with 6 leads) With Built-in Bias Resistors

Contextual Info: RN2610,RN2611 T O SH IB A TOSHIBA PHOTOCOUPLER SILICON PNP EPITAXIAL TYPE PCT PROCESS R Nm 7 R 1 D g R N 7 R 1 • « ■ ■ « ■ V ■ Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2.8- 0.3 + 0,2 1.6- < U

RN1610

Abstract: RN1611 RN2610 RN2611
Contextual Info: RN2610,RN2611 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2610,RN2611 ○ スイッチング用 ○ インバータ用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm z スーパーミニ (6 端子) パッケージに 2 素子を内蔵しています。

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

Marking XA XB XC XD XE XF XH XI XJ XK XM

Abstract: marking YJ transistors YK NPN RN2608 - RN2908 QF npn Marking 47 marking YB YB MARKING ic marking YK kn marking
Contextual Info: 3. List of Principal Characteristics of Built-In Resistor Transistors BRT SSM 3. List of Principal Characteristics of Built-In Resistor Transistors (BRT) * 3.1 Sm ail Super M ini Typ e (SSM) Polarity Type No. RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 RN1107

TRANSISTOR 015G

Abstract: 015G
Contextual Info: RN1610,RN1611 TOSHIBA Transistor Silicon Npn Epitaxial Type PCT Process RN1610,RN1611 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in SM6 (super mini type with 6 leads) l With built-in bias resistors

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

c3148

Abstract: it8511te D8802 asus 2C1208 RAY 33A A23 851-1 diode C1108 d1902 C3152
Contextual Info: A B C D E F6E SCHEMATIC Revision 1.10 1 1 Content PAGE PAGE SYSTEM PAGE REF. 2 3 4 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 CPU-MEROM 1 CPU-MEROM(2) CPU CAP, Thermal Senor

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

toshiba YK smd marking

Abstract: bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV
Contextual Info: 抵抗内蔵型トランジスタ BRT SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

RN1610

Abstract: RN1611 RN2610 RN2611
Contextual Info: RN1610, RN1611 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1610, RN1611 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including two devices in SM6 (super-mini-type with six (6) leads) z With built-in bias resistors

RN2226

Abstract: 2sa1015 sot-23 rn4601 diode 2sa1015
Contextual Info: B ia s R e s ì s t o ! B u ilt-in T ra n s is to r B R T General Use Type F6 Upper side: Similar to 2SC1815(NPN) Middle side: Similar to 2SC1815 + 2SA1015{NPN+PNP) Lower side: Similar to 2SA1015(PNP) 50 100 Similar TR V c e o (V ) Rating lcMAX(mA) Package

RN1417

Abstract: rn4601
Contextual Info: [1 ] Alphanum eric Product List [ 1 ] Alphanum eric Product List Device Page Device Page Device Page RN1001 75 RN1206 113 RN1318 152 RN1002 75 RN1207 118 RN1401 159 RN1003 75 RN1208 118 RN1402 159 RN1004 75 RN1209 118 RN1403 159 RN1005 75 RN1210 122 RN1404