RN2313 Search Results

RN1312

Abstract: RN1313 RN2312 RN2313
Contextual Info: RN2312,RN2313 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2312,RN2313 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

toshiba Transistor Silicon pct

Abstract: RN1312 RN1313 RN2312 RN2313
Contextual Info: RN2312,RN2313 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2312,RN2313 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process

RN1312

Abstract: RN1313 RN2312 RN2313
Contextual Info: RN2312,RN2313 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2312,RN2313 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process

Contextual Info: RN1312,1313 RN1312 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 2.1 ± 0.1 • With Built-in Bias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts and Manufacturing Process • Complementary to RN2312, RN2313

RN1312

Abstract: RN1313 RN2312 RN2313
Contextual Info: RN2312,RN2313 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2312,RN2313 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Contextual Info: RN2312,RN2313 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2312,RN2313 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process

Contextual Info: RN2312,RN2313 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2312,RN2313 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process

RN1312

Abstract: RN1313 RN2312 RN2313
Contextual Info: RN2312,RN2313 シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) 東芝トランジスタ RN2312,RN2313 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm

Contextual Info: RN2312,RN2313 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2312,RN2313 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Contextual Info: TOSHIBA RN2312,RN2313 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN7317 Mr • g mRN7313 « ■w v ■v r u m u 'm Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. • • • • 2.1 With Built-in Bias Resistors

Contextual Info: RN2312,RN2313 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2312, RN2313 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design

Contextual Info: T O S H IB A RN2312,RN2313 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2312, RN2313 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 2.1 ±0.1 • With Built-in Bias Resistors • Simplify Circuit Design

RN1312

Abstract: RN1313 RN2312 RN2313
Contextual Info: RN1312,RN1313 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1312,RN1313 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

toshiba YK smd marking

Abstract: bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV
Contextual Info: 抵抗内蔵型トランジスタ BRT SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

RN1312

Abstract: RN1313 RN2312 RN2313
Contextual Info: RN1312,RN1313 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1312,RN1313 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process

RN2226

Abstract: 2sa1015 sot-23 rn4601 diode 2sa1015
Contextual Info: B ia s R e s ì s t o ! B u ilt-in T ra n s is to r B R T General Use Type F6 Upper side: Similar to 2SC1815(NPN) Middle side: Similar to 2SC1815 + 2SA1015{NPN+PNP) Lower side: Similar to 2SA1015(PNP) 50 100 Similar TR V c e o (V ) Rating lcMAX(mA) Package

RN1417

Abstract: rn4601
Contextual Info: [1 ] Alphanum eric Product List [ 1 ] Alphanum eric Product List Device Page Device Page Device Page RN1001 75 RN1206 113 RN1318 152 RN1002 75 RN1207 118 RN1401 159 RN1003 75 RN1208 118 RN1402 159 RN1004 75 RN1209 118 RN1403 159 RN1005 75 RN1210 122 RN1404

ic T M 2313

Abstract: T M 2313 SC 2313
Contextual Info: RN2312,2313 RN2312 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT U nit in mm A N D DRIVER CIRCUIT APPLICATIONS. • With Built-in Bias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts and Manufacturing Process • Complementary to RN1312, RN1313