RN1442 Search Results

Contextual Info: RN1441~RN1444 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1441,RN1442,RN1443,RN1444 Muting And Switching Applications Unit in mm l High emitter-base voltage: VEBO = 25V (min) l High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA)

Contextual Info: T O S H IB A RN1441 ~RN1444 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1441, RN1442, RN 1443, RN1444 Unit in mm MUTING AND SWITCHING APPLICATIONS • • High Emitter-Base Voltage : V e b o = 25V (Min.) High Reverse hpg : Reverse hFE = 150 (Typ.) (V C E = —2V, IC = —4mA)

Contextual Info: RN1441~RN1444 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1441, RN1442, RN1443, RN1444 Muting and Switching Applications Unit: mm z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA)

Contextual Info: RN1441~RN1444 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1441,RN1442,RN1443,RN1444 Unit in mm Muting and Switching Applications High emitter-base voltage: VEBO = 25V (min) High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA)

RN1441

Abstract: RN1442 RN1443 RN1444
Contextual Info: RN1441~RN1444 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1441,RN1442,RN1443,RN1444 Muting And Switching Applications Unit in mm High emitter-base voltage: VEBO = 25V (min) High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA)

Contextual Info: RN1441~RN1444 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1441,RN1442,RN1443,RN1444 Muting And Switching Applications Unit in mm l High emitter-base voltage: VEBO = 25V (min) l High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA)

Contextual Info: RN1441~RN1444 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1441,RN1442,RN1443,RN1444 Muting And Switching Applications Unit in mm z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA)

RN1441

Abstract: RN1442 RN1443 RN1444 961001EAA2
Contextual Info: RN1441~RN1444 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1441,RN1442,RN1443,RN1444 Muting And Switching Applications Unit in mm High emitter-base voltage: VEBO = 25V (min) High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA)

RN1441

Abstract: RN1442 RN1443 RN1444
Contextual Info: RN1441~RN1444 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1441,RN1442,RN1443,RN1444 Muting and Switching Applications Unit in mm z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA)

RN1441

Abstract: RN1442 RN1443 RN1444
Contextual Info: RN1441～RN1444 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1441,RN1442,RN1443,RN1444 ○ ミューティング用 ○ スイッチング用 単位: mm z エミッタ・ベース間電圧が大きい。

RN1444-A

Abstract: RN1441 RN1442 RN1443 RN1444
Contextual Info: TO SH IB A RN 1441 ~ RN 1444 TO SH IBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1441, RN1442, RN1443, RN1444 U nit in mm MUTING AN D SW ITCHING APPLICATION S • High Emitter-Base • High Reverse h p g Voltage :V e b o = 25V + 0.5 2.5 - 0 . 3

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

Marking XA XB XC XD XE XF XH XI XJ XK XM

Abstract: marking YJ transistors YK NPN RN2608 - RN2908 QF npn Marking 47 marking YB YB MARKING ic marking YK kn marking
Contextual Info: 3. List of Principal Characteristics of Built-In Resistor Transistors BRT SSM 3. List of Principal Characteristics of Built-In Resistor Transistors (BRT) * 3.1 Sm ail Super M ini Typ e (SSM) Polarity Type No. RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 RN1107

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

toshiba YK smd marking

Abstract: bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV
Contextual Info: 抵抗内蔵型トランジスタ BRT SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

1441-RN

Abstract: k 1441 1444 G n1444 1444
Contextual Info: TOSHIBA RN 1441 ~ RN 1444 TOSHIBA TRANSISTOR RN1AA1 m m u g • m ■ w ■ SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1AA7 RN1AA3 m m g m m g uRN1AAA m u -m u m m m u m u -m u ■ « ■ w ■ v MUTING AND SWITCHING APPLICATIONS High Emitter-Base Voltage

bo 200

Abstract: TO-236MOD
Contextual Info: SILICON NPN EPITAXIAL T Y P E RM ^ ^ ~RN 1^ j 1 Unit in mm M UTING A N D SWITCHING APPLICATIONS + 0.5 2 5 - 0 .3 • High Emitter-Base Voltage :V gjjo= 25V Min. • High Reverse hyg : Reverse hFE = 150 (Typ.) (VCE=—2V, Ic= -4m A ) • Low On Resistance :RON= 1^ (Typ.) (lB = 5mA)

RN2226

Abstract: 2sa1015 sot-23 rn4601 diode 2sa1015
Contextual Info: B ia s R e s ì s t o ! B u ilt-in T ra n s is to r B R T General Use Type F6 Upper side: Similar to 2SC1815(NPN) Middle side: Similar to 2SC1815 + 2SA1015{NPN+PNP) Lower side: Similar to 2SA1015(PNP) 50 100 Similar TR V c e o (V ) Rating lcMAX(mA) Package

RN1417

Abstract: rn4601
Contextual Info: [1 ] Alphanum eric Product List [ 1 ] Alphanum eric Product List Device Page Device Page Device Page RN1001 75 RN1206 113 RN1318 152 RN1002 75 RN1207 118 RN1401 159 RN1003 75 RN1208 118 RN1402 159 RN1004 75 RN1209 118 RN1403 159 RN1005 75 RN1210 122 RN1404