RG2006
Abstract: RG2006ln A1434-1
Contextual Info: RG2006LN 注文コード No. N A 1 4 3 4 A 三洋半導体データシート 半導体データシート No.NA1434 をさしかえてください。 RG2006LN シリコン拡散接合型 低 VF・高速スイッチングダイオード 特長 ・高耐圧である VRRM=600V 。
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rg2006lnna1434it13677it14499+6it14498it13678a1434-2/3a1434-3/3rg2006a1434-1
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RG2006
Abstract: A1434-1 TC-00002137 ENA1434A
Contextual Info: RG2006LN Ordering number : ENA1434A SANYO Semiconductors DATA SHEET RG2006LN Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. One-point fixing type plastic mold package facilitating easy mounting and heat dissipation.
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rg2006lnena1434apw100scycle50+4a1434-3/3rg2006a1434-1tc-00002137
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RG2006
Abstract: ENA1434 A1434-1 VRRM600V
Contextual Info: RG2006LN Ordering number : ENA1434 SANYO Semiconductors DATA SHEET RG2006LN Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. One-point fixing type plastic mold package facilitating easy mounting and heat dissipation.
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rg2006lnena1434a1434-3/3rg2006+2a1434-1vrrm600v
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