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    RG2006

    Abstract: RG2006n RG2006JN to220ml ENA1784 A1784
    Contextual Info: RG2006JN Ordering number : ENA1784 SANYO Semiconductors DATA SHEET RG2006JN Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • VRRM=600V trr=16ns typ. Low noise at the time of reverse recovery Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		rg2006jnena1784pw100scycle50+5a1784-3/3rg2006rg2006nto220mla1784 PDF

    RG2006

    Abstract: RG2006n RG2006JN A1784 TO-220ML VRRM600V
    Contextual Info: RG2006JN 注文コード No. N A 1 7 8 4 三洋半導体データシート N RG2006JN シリコン拡散接合型 低 VF・高速スイッチングダイオード 特長 ・VRRM=600V ・trr=16ns typ. ・逆回復時のノイズが小さい 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


    Original     		rg2006jno-220mlsc-67ot186a+8rg200663010sait13677it14499rg2006na1784to-220mlvrrm600v PDF