RF3833 Search Results
RF3833 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| RF3833 | RFMD | RF/IF and RFID - RF Amplifiers - IC RF AMP 30MHZ-2GHZ | Original | 1.11MB |
RF3833 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: RF3833 25W GaN Wide-Band Power Amplifier 30MHz to 2000MHz The RF3833 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios, and general purpose amplification. Using an advanced high power density |
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rf383330mhz2000mhzds131008 | |
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Contextual Info: RF3833 25W GaN Wide-Band Power Amplifier 30MHz to 2000MHz The RF3833 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios, and general purpose amplification. Using an advanced high power density |
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rf383330mhz2000mhzds130913 | |
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Contextual Info: PRELIMINARY RF3833 25W GaN Wide-Band Power Amplifier 30MHz to 2000MHz The RF3833 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios, and general purpose amplification. Using an advanced high power density |
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rf383330mhz2000mhzds140121 | |
RF3833
Abstract: Gan transistor rf gan amplifier transistor amplifier wideband RF3833PCBA-410 GaN BJT RF POWER TRANSISTOR 30MHz
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rf383330mhz2000mhz43dbm+7 | |
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Contextual Info: RF3833 30MHz to 2000MHz, 25W GaN Wide-Band Power Amplifier RF3833 Proposed 30MHz TO 2000MHz, 25W GaN WIDE-BAND POWER AMPLIFIER Package: Air-Cavity Cu Features Advanced GaN HEMT Technology Output Power of 25W Advanced Heat-Sink Technology 30–2000 MHz Instantaneous |
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rf383330mhz2000mhz43dbm+1 |