POWER400M Search Results

Contextual Info: VAO12FN20 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power400m Frequency Min. (Hz)8G Frequency Max. (Hz)12.4G Efficiency Min.6.0 V(Oper.) Nom.(V) Oper. Voltage90 I(Oper.) Typ.(A) Oper. Current85m Semiconductor MaterialSilicon Package StylePill-C

61c1024

Abstract: IS61C1024
Contextual Info: IS 61C1024 128K X 8 HIGH SPEED CMOS STATIC RAM PRELIMINARY SEPTEMBER 1990 DESCRIPTION FEATURES The ISSI IS 6 lC l0 2 4 is a high speed, low power, 131,072- word by 8- bit CMOS static RAM. It is fabricated using ISSI's high performance CMOS double metal technol­