PSMN020 Search Results

PSMN020-150W

Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN020-150W SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 150 V ID = 73 A

PSMN020-150W

Abstract: SOT429
Contextual Info: Philips Semiconductors Objective specification TrenchMOS transistor FEATURES PSMN020-150W SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA

Contextual Info: LF PA K 56 PSMN020-100YS N-channel 100V 20.5mΩ standard level MOSFET in LFPAK 7 November 2013 Product data sheet 1. General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and

Contextual Info: PSMN020-30MLC N-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using TrenchMOS Technology 4 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and

PSMN020-100YS

Contextual Info: PSMN020-100YS N-channel 100V 20.5mΩ standard level MOSFET in LFPAK Rev. 02 — 7 January 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic

PSMN020-100YS

Contextual Info: LF PA K PSMN020-100YS N-channel 100V 20.5 mΩ standard level MOSFET in LFPAK Rev. 3 — 18 June 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic

Contextual Info: Philips Semiconductors Objective specification TrenchMOS transistor FEATURES • • • • • PSMN020-150W SYMBOL QUICK REFERENCE DATA ’Trench’ technology Very low on-state resistance Fast switching High thermal cycling performance Low thermal resistance

Contextual Info: LF PA K 56 PSMN020-100YS N-channel 100V 20.5mΩ standard level MOSFET in LFPAK 26 March 2014 Product data sheet 1. General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

BLF4G08LS-160A

Abstract: J3A080GA4/T0BG1610 MARKING S08 NXP TJA1050T-CM,11 power+wizard+1.1+fault+codes SCC2691AC1A28 IP5004CX6 TDA8275AHN/C1,557 H3-BGA3XX_11 BZA456A
Contextual Info: NXP Semiconductors Product Discontinuation DN66 June 30, 2010 SEE DN66 NOTICE LETTER FOR APPLICABLE LAST TIME BUY TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. FOR ADDED INFORMATION, REFER TO NXP WEB-SITE "http://www.nxp.com/products/eol/"

circuit diagram wireless spy camera

Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

LFPAK footprint

Abstract: PowerPAK 1212-8 stencil LFPAK footprint Renesas PSMN8R2-80YS POWERPAK SO8 LFPAK56 DFN 3.3X3.3 PSMN7R0-30MLC PSMN012-60YS SOT223 nxp
Contextual Info: Ultra-reliable LFPAK56 and LFPAK33 Tougher just got smaller NXP’s LFPAK – Designed for reliability Designing a complex automotive system, a high efficiency industrial power supply or a slimline portable PC ? NXP has a range of smaller, faster, cooler MOSFETs to help you deliver maximum reliability.

Transistor SMD SOT363 SC70

Abstract: BSP254A D2Pak Package IRF540 complementary MOSFET Selection Guide PHD78NQ list of n channel fet IRF640 smd PSMN009-100W BUK7516
Contextual Info: Semiconductors Power MOSFET Selection Guide 2002 / 2003 The evolution of our LVMOS strategy continues to go from strength to strength. This MOSFET selection guide summarises our portfolio releases to date. Some of our recent innovations include: LFPAK and QLPAK packages – see page 4-5 and 8-9 exciting additions to our portfolio that further extends your choice and, with ever-increasing demands for improved

BUT11APX equivalent

Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

IRFP150N equivalent

Abstract: IRF3710 equivalent irf540 equivalent equivalent of irf640n irfp250n equivalent equivalent irf640n IRFP260N IRFP260n equivalent IRF3415 equivalent IRF540
Contextual Info: VDS RDS ON ID Package Philips VDS RDS(ON) ID Rating RDS(ON) IRFR9N20D IRFS17N20D IRFS23N15D IRFS23N20D IRFS31N20D IRFS33N15D IRFS59N10D IRFZ24N IRFZ24S IRL1104S IRL2203NS IRL3103 IRL3103S IRL3215 IRL3705N IRL3803 IRL3803S IRLL014 IRLML2803 IRLR024N IRLZ24N

PSMN015-60PS

Abstract: BUK9507-30B Power MOSFET Selection Guide BSS123 NXP BSH103 BSS84 / BSH201 2N7002CK BSH108 BUK7535-55A PMN38EN
Contextual Info: Power MOSFET Selection Guide 2010 Smaller, faster, cooler 2 Table of contents 12 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 4

BT131W600

Abstract: PSMN009 PSMN009-100W triac 200w 74LV03D BYG26D BYG26G BYQ28ED-200 BYV29X-600 HEF4013BTS
Contextual Info: Philips Semiconductors, Inc. Product Discontinuation Notice DN49 Exhibit B June 30, 2003 CORRECTION/REACTIVATION OF PREVIOUSLY DISCONTINUED PRODUCTS Exhibit B These products are being published to provide clarification concerning previously discontinued products

PHP18NQ10T

Abstract: IRF540 MOSFET datasheet PHP18NQ20T PHB27NQ10T PHB23NQ10T IRF540 p-channel MOSFET PHP45 MOSFET IRF540 PHP30NQ15T TO247
Contextual Info: High performance MOSFETs for DC-DC conversion 100 V / 200 V MOSFETs Solutions for power in Communications SMPS Optimized solutions for 100 V Output power W Optimal Philips Semiconductors’ TrenchMOS technology exhibits significantly lower gate charge for a given RDS(on), thus delivering far better

TEA1620

Abstract: BUK2114 IRF540 n-channel MOSFET BATTERY CHARGER buk2914-50syts TEA1507 BUK2114-50SYTS TEA1552 PHD78NQ bu4508dx BU2527
Contextual Info: Semiconductors Power Management Selection Guide 2005 page 1 Semiconductors Welcome to Philips’ Power Management selection guide 2005. Inside you will discover just how easily you can tap into the design freedom offered by our Power Management portfolio. Our advanced power technologies and products cover virtually all aspects of

BUK2114

Abstract: BUK2114-50SYTS saa7117 SAA7136E MPSA92 168 saa7136 buk2914-50syts TDA8920BTH bu4508dx KMZ52
Contextual Info: Index Type number Page number 1N4148 34 1N4531 34 1N47xxA series 44 1PS10SB62 32 1PS10SB63 32 1PS10SB82 32 1PS181 36 1PS184 36 1PS193 34 1PS226 36 1PS59SB10 28 1PS59SB14 28 1PS59SB15 28 1PS59SB16 28 1PS59SB20 30 1PS59SB21 28 1PS66SB17 32 1PS66SB62 32 1PS66SB63

on5134

Abstract: philips ON5134 transistor tda3612 OM8838ps BT 804 triac on5134 Transistor on5217 triacs bt 804 600v D203B SMD Transistor W02
Contextual Info: Philips Semiconductors, Inc. Product Discontinuation Notice DN48A Exhibit A January 21, 2003 SEE DN48A NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.

so8 footprint

Abstract: sot669 package SO8 package PSMN026-80YS sot669 PSMN012-100YS PSMN1R2-25YL PSMN1R3-30YL PSMN1R5-25YL PSMN1R7-30YL
Contextual Info: New Trench 6 MOSFETs in a Power-SO8 package 25 V to 100 V MOSFETs in Power-SO8 We’ve extended our range of Trench 6 MOSFETs with new devices at 60 V and 100 V in the LFPAK SOT669 package. NXP leads the way with its range of Trench 6 MOSFETs in LFPAK (Loss Free PAcKage). By combining Trench 6 silicon