PR2005 Search Results

PR2001

Abstract: PR2002 PR2004 PR2005 DS-260
Contextual Info: PR2001 - PR2005 2.0A FAST RECOVERY RECTIFIER Features • · · · · · Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 50A Peak Low Reverse Leakage Current Plastic Material: UL Flammability

R20 marking

Abstract: PR2001 PR2005
Contextual Info: PR2001 “ PR2005 v is H A Y 2.0A FAST RECOVERY RECTIFIER y LITEM ZI POWER SEMICONDUCTOR Features Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 50A Peak Low Reverse Leakage Current

PR2001

Abstract: PR2001-T PR2002 PR2004 PR2005
Contextual Info: NOT RECOMMENDED FOR NEW DESIGN PR2001 - PR2005 2.0A FAST RECOVERY RECTIFIER Features • • • • • Diffused Junction Fast Switching for High Efficiency Surge Overload Rating to 50A Peak Low Reverse Leakage Current Lead Free Finish, RoHS Compliant Note 4

Contextual Info: PR2001 - PR2005 2.0A FAST RECOVERY RECTIFIER Features • · · · · · Diffused Junction Fast Switching for High Efficiency B A High Current Capability and Low Forward Voltage Drop A Surge Overload Rating to 50A Peak Low Reverse Leakage Current Lead Free Finish, RoHS Compliant Note 4

PR2001

Abstract: PR2001-T PR2002 PR2004 PR2005
Contextual Info: PR2001 - PR2005 2.0A FAST RECOVERY RECTIFIER Features • · · · · Diffused Junction Fast Switching for High Efficiency B A Surge Overload Rating to 50A Peak A Low Reverse Leakage Current Lead Free Finish, RoHS Compliant Note 4 C D Mechanical Data · ·

PR2001

Abstract: PR2002 PR2004 PR2005
Contextual Info: PR2001 - PR2005 2.0A FAST RECOVERY RECTIFIER Features • · · · · · Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 50A Peak Low Reverse Leakage Current Plastic Material: UL Flammability

Contextual Info: PR2001 - PR2005 2.0A FAST RECOVERY RECTIFIER POWER SEMICONDUCTOR Features • • • • • • Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 50A Peak Low Reverse Leakage Current

Contextual Info: PR2001 - PR2005 2.0A FAST RECOVERY RECTIFIER Features Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 50A Peak Low Reverse Leakage Current Plastic Material: UL Flammability

Contextual Info: PR2001-PR2005 Vishay Lite-On Power Semiconductor 2.0A Fast Recovery Rectifier Features • Diffused junction • Fast switching for high efficiency • High current capability and low forward voltage drop • Surge overload rating to 50A peak • Low reverse leakage current

R20 marking

Abstract: PR2001 PR2005
Contextual Info: r w \T ^ r r I N C O R P O R A T E PR2001 - PR2005 2.0A FAST RECOVERY RECTIFIER D Features_ • • • • • • Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 50A Peak

Contextual Info: PR2001 - PR2005 2.0A FAST RECOVERY RECTIFIER Features Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 50A Peak Low Reverse Leakage Current Plastic Material: UL Flammability

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

u 880 e

Abstract: vermelho D 880
Contextual Info: T H IS D R A W ING IS COPYRIGHT UNPUBLI SHED. 20 RELEASED BY TYCO ELECTRONICS CORPORATION FOR ALL PUBLICATION RIGHTS 20 LOC AP RESERVED. REV I S IONS D IST LTR DESCRIPTION REDRAWING REVISED Í 1 1 1 r - 3 — L 1 i i i 1 r Lj0i * _ NAO -ALL MATERIA MATERIAL

Contextual Info: LITE ON POWER SEMICONDUCTOR PR2001 thru PR2007 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 2.0 Amperes FAST RECOVERY RECTIFIERS DO-15 FEATURES Fast switching for high efficiency Low cost Diffused junction Low reverse leakage current Low forward voltage drop

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

smd marking 911 zener

Abstract: d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt
Contextual Info: RETURN TO SHORT FORM TABLE OF CONTENTS ################################### RETURN TO SHORT FORM INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Short Form Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 September 1999 Specifications are subject to change without notice.

Contextual Info: PR2001G - PR2007G 2.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency B A High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 80A Peak

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

melf diode marking

Abstract: A180-WLA RS503s SBR130S3 Schottky melf hall sensor 35l 5KE91A-B PR1005G-A GBPC3504L STPR2020CT
Contextual Info: PCN PART NUMBER LISTING Part Number PCN Title Rel date Comments 1.5KE100A-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100A-T 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-T 1049 Lead-Free Lead Finish

Contextual Info: PR2001G-PR2007G Vishay Lite-On Power Semiconductor ▼ 2.0A Fast Recovery Glass Passivated Rectifier Features • G lass passivated die construction • Diffused junction • Fast sw itching fo r high efficiency • High current capability and low forw ard

PR2001

Abstract: PR2002 PR2003 PR2004 PR2005 PR2006 PR2007
Contextual Info: PR2001 thru PR2007 Compact Technology REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 2.0 Amperes FAST RECOVERY RECTIFIERS DO-15 FEATURES Fast switching for high efficiency Low cost Diffused junction Low reverse leakage current Low forward voltage drop