PR2007 Search Results

PR2001G

Abstract: PR2007G PR2007
Contextual Info: LITE-ON SEMICONDUCTOR PR2001G thru PR2007G REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 2.0 Amperes FAST RECOVERY GLASS PASSIVATED RECTIFIERS DO-15 FEATURES Fast switching for high efficiency Glass passivated chip Low reverse leakage current Low forward voltage drop

Contextual Info: PR2001G - PR2007G 2.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop

Contextual Info: LITE ON POWER SEMICONDUCTOR PR2001 thru PR2007 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 2.0 Amperes FAST RECOVERY RECTIFIERS DO-15 FEATURES Fast switching for high efficiency Low cost Diffused junction Low reverse leakage current Low forward voltage drop

Contextual Info: PR2001G - PR2007G 2.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency B A High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 80A Peak

Contextual Info: PR2001G-PR2007G Vishay Lite-On Power Semiconductor ▼ 2.0A Fast Recovery Glass Passivated Rectifier Features • G lass passivated die construction • Diffused junction • Fast sw itching fo r high efficiency • High current capability and low forw ard

marking AVW

Abstract: AVW MARKING
Contextual Info: PR2001G - PR2007G 2.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 80A Peak Low Reverse Leakage Current

Contextual Info: PR2001G - PR2007G 2.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 80A Peak

PR2001

Abstract: PR2002 PR2003 PR2004 PR2005 PR2006 PR2007
Contextual Info: PR2001 thru PR2007 Compact Technology REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 2.0 Amperes FAST RECOVERY RECTIFIERS DO-15 FEATURES Fast switching for high efficiency Low cost Diffused junction Low reverse leakage current Low forward voltage drop

PR2001G

Abstract: PR2007G
Contextual Info: PR2001G - PR2007G 2.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 80A Peak

PR2001

Abstract: PR2002 PR2003 PR2004 PR2005 PR2006 PR2007
Contextual Info: LITE-ON SEMICONDUCTOR PR2001 thru PR2007 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 2.0 Amperes FAST RECOVERY RECTIFIERS DO-15 FEATURES Fast switching for high efficiency Low cost Diffused junction Low reverse leakage current Low forward voltage drop

PR2001G

Abstract: PR2007G
Contextual Info: LITE-ON SEMICONDUCTOR PR2001G thru PR2007G REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 2.0 Amperes FAST RECOVERY GLASS PASSIVATED RECTIFIERS DO-15 FEATURES Fast switching for high efficiency Glass passivated chip Low reverse leakage current Low forward voltage drop

PR2007G

Abstract: PR2007 PR2001G
Contextual Info: PR2001G - PR2007G 2.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 80A Peak

PR2001G

Abstract: PR2007G
Contextual Info: PR2001G “ PR2007G 2.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER LITEM ZI y POW ER SEMICONDUCTOR Features Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 80A Peak

pr2001

Contextual Info: LITE-ON SEMICONDUCTOR PR2001G thru PR2007G REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 2.0 Amperes FAST RECOVERY GLASS PASSIVATED RECTIFIERS DO-15 FEATURES Fast switching for high efficiency Glass passivated chip Low reverse leakage current Low forward voltage drop

PR2001G

Abstract: PR2007G 2006G
Contextual Info: PR2001G - PR2007G 2.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features • · · · · Glass Passivated Die Construction Fast Switching for High Efficiency Surge Overload Rating to 80A Peak B A Lead Free Finish, RoHS Compliant Note 4 C Mechanical Data ·

PR2003

Abstract: PR2001 PR2002 PR2004 PR2005 PR2006 PR2007 PR2005 liteon
Contextual Info: LITE-ON SEMICONDUCTOR PR2001 thru PR2007 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 2.0 Amperes FAST RECOVERY RECTIFIERS DO-15 FEATURES Fast switching for high efficiency Low cost Diffused junction Low reverse leakage current Low forward voltage drop

Contextual Info: LITE-ON SEMICONDUCTOR PR2001G thru PR2007G REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 2.0 Amperes FAST RECOVERY GLASS PASSIVATED RECTIFIERS DO-15 FEATURES Fast switching for high efficiency Glass passivated chip Low reverse leakage current Low forward voltage drop

Contextual Info: LITE ON POWER SEMICONDUCTOR PR2001G thru PR2007G REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 2.0 Amperes FAST RECOVERY GLASS PASSIVATED RECTIFIERS DO-15 FEATURES Fast switching for high efficiency Glass passivated chip Low reverse leakage current

PR2001G

Abstract: PR2007G
Contextual Info: PR2001G - PR2007G 2.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 80A Peak Low Reverse Leakage Current

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

RTL8111D

Abstract: PQ2000 up7711 PD8001 kb3925 asus schematic LG lcd backlight inverter RTL8111DL ADP3208J vga nvidia
Contextual Info: 4 3 Reset 2 Off Button PWRGD DOWN CPU, VGA Thermal OVERT# FORCE_OFF# Circuit Daughter Board EC_RST# PWR_SW# 2 D AC_BAT_SYS +5VA +3VA 1 Power On SWITCH EC KB3925 5 PM_RSMRST# VSUS_ON ICH9-M VRMPWRGD C SUSC_EC# From EC 9 +12V +5V +3V +1.8V +1.5V +0.9V GMCH Cantiga

smd marking 911 zener

Abstract: d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt
Contextual Info: RETURN TO SHORT FORM TABLE OF CONTENTS ################################### RETURN TO SHORT FORM INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Short Form Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 September 1999 Specifications are subject to change without notice.

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

melf diode marking

Abstract: A180-WLA RS503s SBR130S3 Schottky melf hall sensor 35l 5KE91A-B PR1005G-A GBPC3504L STPR2020CT
Contextual Info: PCN PART NUMBER LISTING Part Number PCN Title Rel date Comments 1.5KE100A-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100A-T 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-T 1049 Lead-Free Lead Finish