PP25C Search Results

Contextual Info: PP25C:50 OHM G + Y -2 / 1 P T C : .7 '/./ C O P E R A T I N G R A N G E ¡- 55 T G 1 2 5 G G T G P A G G R A N G E :- 65 T G 1 5 0 C T H E R M A L T I M E C G N G T A N T :t, 0 G EC. M A X H I C CI F A T I G N C G N G T A N T :2 ,5 n W / C M I N F E W E R F A T I N G 1 2 5 W G 2 5 C ,D E R A T E T E

D4MB

Contextual Info: PHILIPS INTERNATIONAL Data sheet status Preliminary specification date of issue March 1991 Sfc.E D • 711Qfl2b □ D4 Mb bti 17T « P H I N BUK 476-1000A/B PowerMOS transistor Replaces BUK446-1000A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

BUK436-50B

Abstract: BUK436-50A
Contextual Info: H AMER P H I L I P S / D I S C R E T E SSE D • ^53^31 00202Ô5 T ■ P o w erM O S tra n s is to r . B U K 436-50A B U K 436-50B T - 3 ‘M G EN ER A L D ESCR IPTIO N N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended tor use in