PMZB350UPE Search Results

Contextual Info: PMZB350UPE 20 V, single P-channel Trench MOSFET 1 August 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

NX3008NBKMB

Abstract: BSS138BK BSS84AKS PMV48XP BSH201 2N7002PW nx2301 PMPB27XP PMF170XP 2N7002PS
Contextual Info: Small-signal MOSFET Selection Guide Broad selection of small-signal MOSFETs for a wide range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today´s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety

NX3008

Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
Contextual Info: Advanced cross reference list DFN* MOSFETs *DFN: discrete flat no-leads *in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1

NX3008NBKMB

Abstract: IP4303CX4 PCMF2DFN1
Contextual Info: Safeguard sensitive ICs - Increase battery life - Save space With NXP key products as recommended in this brochure Interface / Function Description Product type Package NFC antenna protection 18 / 24 V Birectional low capacitance ESD protection diode PESD18VF1BL

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Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint

NX3008NBKMB

Abstract: PCMF2DFN1
Contextual Info: 使用本手册推荐的恩智浦主要产品 保护敏感的IC – 延长电池寿命 – 节省空间 接口/功能 说明 产品型号 封装 NFC天线保护 18/24 V双向低电容 ESD保护二极管 PESD18VF1BL PESD24VF1BL PESD18VF1BSF PESD24VF1BSF DFN1006