PE42510 Search Results

PE42510

Abstract: j8 er capacitor QFN5X5-32LD AVX COG Capacitor Transistor z1 smd 142-0701-801 Z1 SMD J502-ND CAPACITOR SMD AVX J9 SMD CODE MARKING
Contextual Info: 5 4 3 2 1 J1 SMA 1 2 D NC RF1 NC NC NC GND NC NC U1 QFN5X5-32LD PE42510 NC RF2 NC NC NC NC GND NC 1 9 10 11 12 13 14 15 16 2 1 J3 SMA 24 23 22 21 20 19 18 17 2 1 2 3 4 5 6 7 8 NC NC RES VDD V1 NC NC (VSS) J2 SMA GND NC NC NC RFC NC NC GND 32 31 30 29 28

Contextual Info: Product Specification PE42510A SPDT High Power UltraCMOS Reflective RF Switch 30 - 2000 MHz Product Description The following specification defines an SPDT single pole double throw switch for use in cellular and other wireless applications. The PE42510A uses Peregrine’s UltraCMOS™

PE42510

Abstract: PE42510A QFN5X5-32LD PE42510AMLI 24 leads qfn 5x5 Circuit details of 3502 rf spdt mhz dbm PE42510AMLI-Z hotel SPDT T/R SWITCH
Contextual Info: Product Specification PE42510A SPDT High Power UltraCMOS RF Switch 30 - 2000 MHz Product Description The following specification defines an SPDT single pole double throw switch for use in cellular and other wireless applications. The PE42510A uses Peregrine’s UltraCMOS™

Contextual Info: Product Specification PE42510A SPDT High Power UltraCMOS Reflective RF Switch 30 - 2000 MHz ® •       50 Watt P1dB compression point 10 Watts <8:1 VSWR Normal Operation 29 dB Isolation @ 800 MHz <0.3 dB Insertion Loss at 800 MHz

Contextual Info: Product Specification PE42510A SPDT High Power UltraCMOS Reflective RF Switch 30 - 2000 MHz Product Description The following specification defines an SPDT single pole double throw switch for use in cellular and other wireless applications. The PE42510A uses Peregrine’s UltraCMOS™

Contextual Info: Product Specification PE42510A SPDT High Power UltraCMOS Reflective RF Switch 30 - 2000 MHz Product Description The following specification defines an SPDT single pole double throw switch for use in cellular and other wireless applications. The PE42510A uses Peregrine’s UltraCMOS®

Contextual Info: Product Specification PE42510A SPDT High Power UltraCMOS Reflective RF Switch 30 - 2000 MHz Product Description Features • No blocking capacitors required The following specification defines an SPDT single pole double throw switch for use in cellular and other wireless

Contextual Info: Product Specification PE42820 UltraCMOS SPDT RF Switch 30 - 2700 MHz Product Description The PE42820 is a HaRP technology-enhanced high power reflective SPDT RF switch designed for use in mobile radio, relay replacement and other high performance wireless applications.

PE42552

Abstract: PE4251 F QFN 3X3 PE42440 pe4259 PE4257 PE4283 PE4210 PE42451 PE4246
Contextual Info: Wireless RF Switches May 2010 Highly Rugged UltraCMOS Switches Extend Performance to 13.5 GHz High Linearity, 4 kV HBM ESD and CMOS Control Interface Ideal for Wireless Applications The Peregrine UltraCMOS™ RF switches feature high ESD tolerance, high linearity, high isolation and low insertion

Contextual Info: Product Specification PE4251 SPDT UltraCMOS RF Switch 10 – 3000 MHz, Absorptive Product Description The PE4251 is a HaRP™-enhanced Absorptive SPDT single pole double throw RF Switch for use in general switching applications and mobile infrastructure. This device offers a

PE42510A

Abstract: PE42510 PE42650 PE42650A
Contextual Info: NEWS RELEASE November 2008 Peregrine Semiconductor annonce une ligne de commutateurs RF de forte puissance Des circuits 50 Watts idéaux pour les applications radio mobiles Peregrine Semiconductor Corporation, fournisseur des circuits intégrés RF CMOS et à signaux mixtes

PE42510

Abstract: PE42510A
Contextual Info: NEWS RELEASE November 2008 HF-Leistungsschalter für 50 W von Peregrine Semiconductor Der HF-Schalter für den Mobilfunk San Diego, Kalifornien, USA, und München, Deutschland, 10. November 2008 – Die Peregrine Semiconductor Corporation, einer der führenden Anbieter hochleistungsfähiger HF-CMOS- und MixedSignal-ICs für die Kommunikationstechnik, stellt eine neue Linie hochleistungsfähiger HF-Schalter in

QFN-32L 5X5

Contextual Info: Wireless RF Switches February 2009 Highly Rugged UltraCMOS Switches Extend Performance to 7.5 GHz High Linearity, 2 kV HBM ESD and CMOS Control Interface Ideal for Wireless Applications The Peregrine UltraCMOS™ RF switches feature high ESD tolerance, high linearity, high isolation and low insertion

PE42359

Abstract: PE42924 PE42920 PE42422 LGA 16L 4X4 qfn 3x3 dc-dc HARP QFN 5X5 12L PE42551
Contextual Info: Wireless RF Switches January 2013 Highly Rugged UltraCMOS Switches Extend Performance to 13.5 GHz High Linearity, High HBM ESD and CMOS Control Interface Ideal for RF Applications The Peregrine UltraCMOS® RF switches feature high ESD tolerance and high linearity providing an exceptionally

PE33632

Abstract: PE33362 PE33632 die pe33382 PE42692 PE33362 die PE42510A1 PE4340 PE33631 PE42694
Contextual Info: 2010 Product Selection Guide First Changing how you design RF. Forever. Edition Welcome to Peregrine Semiconductor UltraCMOS : The Green RF Process Technology Peregrine Semiconductor is a leading supplier of high-performance RF CMOS and mixed-signal communications ICs which are ideally suited for

PE42510A

Contextual Info: COMUNICATO STAMPA November 2008 Peregrine Semiconductor annuncia una linea di switch RF ad alta potenza I dispositivi da 50 Watt sono ideali per le applicazioni radio mobili San Diego, California, e Monaco, Germania, 10 Novembre 2008 - Peregrine Semiconductor

PE42510A

Abstract: PE42510
Contextual Info: NEWS RELEASE November 2008 Peregrine Semiconductor presenterar nya RF-switchar för hög effekt 50 W-komponenter idealiska för mobila radiotillämpningar San Diego, Kalifornien, och München, Tyskland, 10 november 2008 - Peregrine Semiconductor Corporation, en ledande leverantör av RF CMOS- och blandsignal-baserade kommunikationskretsar av

PE42510A

Abstract: PE43204 PE9309 PE97022 PE97042 PE97632 SYNTHESIZER FOR phased array SPDT FETs "stacked fets"
Contextual Info: MAY 2009 The Sky’s the Limit: Silicon-on-Sapphire Processing Takes Flight in Defense and Space Systems by Dale Robinette, Peregrine Semiconductor Corporation S ince the invention of radios, military and space systems have been early adopters of wireless technology. As commercial use

TAG 302-600

Abstract: PE42924
Contextual Info: Changing RF Design. Forever. TM 2013 Commercial Products Product Selection Guide First Edition Welcome to Peregrine Semiconductor UltraCMOS RF Process Technology Peregrine Semiconductor NASDAQ: PSMI is a fabless provider of high-performance radio-frequency (RF)

PE42692

Abstract: F QFN 3X3 PE42xx SPDT stacked FET PE42552 03 07 qfn 3x3 flip flap PE3336 PE3341 PE4230
Contextual Info: 2009 Product Selection Guide First Changing how you design RF. Forever. Edition Welcome to Peregrine Semiconductor UltraCMOS RF Process Technology Peregrine Semiconductor is a leading supplier of high-performance RF CMOS and mixed-signal communications ICs which are ideally suited for

PE4251

Abstract: PE4251MLI PE4251MLI-Z PE4250 PE42510 33MIL
Contextual Info: Product Specification PE4251 SPDT UltraCMOS RF Switch 10 – 3000 MHz, Absorptive Product Description The PE4251 is a HaRP™-enhanced Absorptive SPDT single pole double throw RF Switch for use in general switching applications and mobile infrastructure. This device offers a

solid state RF HIGH-POWER SWITCH

Abstract: PE42510A PE42510
Contextual Info: NEWS RELEASE EDITORIAL CONTACT: Mark Schrepferman, Director, Communications and Industrial Products Marketing 858 731-9512 9380 Carroll Park Drive San Diego, CA USA 92121 858-731-9400 Cindy Trotto, Marketing Communications Manager (602) 750-7203 Reader/Literature Inquiries:

viasat

Abstract: x-band power transistor 50W PE4150 PE42510A PE95420 Thales x-band X-band marine radar stacked FETs JTRS
Contextual Info: JANUARY 2009 High Power UltraCMOS Switches and Mixers Satisfy Demanding Military Design Challenges by Dale Robinette and Mark Schrepferman, Peregrine Semiconductor Corp. D ramatically revamped several years ago, the Joint Tactical Radio System JTRS program looks to be on track

PE42510A

Contextual Info: LEHDISTÖTIEDOTE November 2008 Peregrine Semiconductor julkistaa uusia High-Power RF-kytkinpiirejä 50 Watin tehonkesto soveltuu erinomaisesti mobiiliradiosovelluksiin San Diego, Kalifornia Yhdysvallat ja München (Saksa), marraskuun 10., 2008 - Peregrine