PDTC115EE |
|
Philips Semiconductors
|
NPN resistor-equipped transistor |
|
Original |
PDF
|
PDTC115EE |
|
Philips Semiconductors
|
NPN resistor-equipped transistors R1 = 100 kW, R2 = 100 kW |
|
Original |
PDF
|
PDTC115EE |
|
Philips Semiconductors
|
NPN Resistor-Equipped Transistor, R1 = 100 kohm, R2 = 100 kohm |
|
Original |
PDF
|
PDTC115EE,115 |
|
NXP Semiconductors
|
NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm - hFE max:>80 ; hFE min: 80 ; IO max: 20 mA; Input resistor: 100 kOhm; Polarity: NPN ; Ptot max: 150 mW; Resistor ratio: 1 ; VCEO max: 50 V; Package: SOT416 (SC-75); Container: Tape reel smd |
|
Original |
PDF
|
PDTC115EEF |
|
Philips Semiconductors
|
NPN resistor-equipped transistors R1 = 100 kW, R2 = 100 kW |
|
Original |
PDF
|
PDTC115EEF,115 |
|
NXP Semiconductors
|
Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW SC89 |
|
Original |
PDF
|
PDTC115EET/R |
|
NXP Semiconductors
|
NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm - hFE max:>80 ; hFE min: 80 ; IO max: 20 mA; Input resistor: 100 kOhm; Polarity: NPN ; Ptot max: 150 mW; Resistor ratio: 1 ; VCEO max: 50 V |
|
Original |
PDF
|