PD300 Search Results

Contextual Info: FRD MODULE PD300F12 300A/1200V/trr:250nsec OUTLINE DRAWING FEATURES * Isolated Base * Dual Diode Doubler Circuit * Ultra Fast Recovery * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * High Frequency Rectification Maximum Ratings

30h80

Abstract: avalanche photodiodes vn09 PD80 PD8932 InGaAs photodiodes mitsubishi high speed
Contextual Info: M IT S U B IS H I InGaAs P H O TO DIO DES PDSXX2 VîS* F O R O PTICAL. C O M M U N IC A T IO N MITSUBISHI DISCRETE SC TYPE NAME S E R IE S 1=24=102^ 0014251 T EIMITS 31E D r^rm-o7 PD3002, PD8932 DESCRIPTION FEATURES The P08XX2 series are InGaAs avalanche photodiodes de­

4445

Abstract: PD3000
Contextual Info: PD3000 POSITIVE EMMITER COUPLED LOGIC PECL CRYSTAL OSCILLATOR The PD3000 series provides a range of +3.3V crystal oscillators compatible with 100k PECL. They are packaged in a 14 pin DIL resistance weld enclosure. Available with a complementary output at pin one.

R0402

Abstract: PC319 PQ301 TPC28T PJP302 PC301 PR307 11VS PC306 PJP303
Contextual Info: 5 4 3 2 25mil PC300 PC301 0.1UF/25V 10UF/25V PC302 10UF/25V /X 1 Shape AC_BAT_SYS PCE300 AC_BAT_SYS Shape AC_BAT_SYS 25mil +5VSUS 15UF/25V PQ300 SI4800BDY PR300 4.7Ohm r0603_h24 TPC28T PT300 /X PR301 0Ohm PD300 Close to PCE301 BAT54AW PC303 PCE301 PC304 0.1UF/25V

Contextual Info: M IT S U B IS H I InGaAs PHOTO DIODES PD8XX2 SERIES FO R O PTICAL. C O M M U N IC A T IO N MITSUBISHI DISCRETE SC TYPE NAME E bSMRôS'ï Q01H2S1 T EIMITS 31E D :"Pm -07 PD3002, PD3932 DESCRIPTION FEATURES The PD 8X X 2 series are InG aAs avalanche photodiodes de­

PD3001

Contextual Info: PD3001 Data Transmission Cable Features: • Single twisted pair of 7/30AWG tinned copper conductors screened overall in aluminised polyester tape with integral drain wire. Screened cable 1 pair per metre. Area, conductor CSA: 0.336mm2; 22 AWG (7/0.25mm) tinned

PD300

Abstract: TO56 PIN Photodiode 1550nm 4 PIN TO46 package TO56 package Photodiode 1550nm bandwidth Photodiode, 1550nm PIN Photodiode 1550nm Photodiode 1550nm bandwidth PD300-003-100 PD300-003-105
Contextual Info: PD300 300 m InGaAs Photodiode FEATURES • Planar Structure • Dielectric Passivation • 100% Purge Burn-in • High Responsivity PD300-003-0xx Ceramic Sub-Mount PD300-003-1xx TO can Package PD300-003-3xx SC/APC Pigtail PD300-003-5xx FC Receptacle APPLICATIONS

PD300F12

Contextual Info: FRD MODULE PD300F12 300A/1200V/trr:250nsec OUTLINE DRAWING FEATURES * Isolated Base * Dual Diode Doubler Circuit * Ultra Fast Recovery * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * High Frequency Rectification Maximum Ratings

IDC 10ms

Abstract: PD300F12
Contextual Info: FRD 300A Avg 1200 Volts PD300F12 •外形寸法図 OUTLINE DRAWING ■回路図 CIRCUIT C2E1 (E2) (C1) A2K1 K2 A1 （単位 Dimension：mm） ■最大定格 Maximum Ratings 項 目 Parameter 記号 Symbol 耐圧クラス Grade PD300F12

Contextual Info: FRD 300A Avg 1200 Volts PD300F12 •外形寸法図 OUTLINE DRAWING ■回路図 CIRCUIT C2E1 (E2) (C1) A2K1 K2 A1 （単位 Dimension：mm） ■最大定格 Maximum Ratings 項 目 Parameter 記号 Symbol 耐圧クラス Grade PD300F12

Contextual Info: DC­DC Converters Series PD Single and Series PD Dual Isolated Regulated 100 Watts, Wide Input Range/200­380 VDC Fully Regulated, Short Circuit Protected Parallel Operation Available Features: Dual isolated outputs Short circuit protection

PowerDsine

Abstract: internet over ethernet DS 3107 transistor 3006 DS-3006 PowerDsine 3006 "PowerDsine" "Power over Ethernet" "remote power"
Contextual Info: PowerDsine 3006 Power over Ethernet Midspan for Low-Density Installations PowerDsine’s Power over Ethernet PoE 3006 Midspan offers a cost-effective, fully IEEE 802.3af compliant solution designed for the Small Medium Business (SMB) market. The 3006 PoE Midspan allows an easy,

MA7809

Abstract: 2S711 SA2713 L17D STL51 BC412 KIS434 NS435 NS436 NS437
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2n2709

Abstract: C621 2N4411 c643 OC44 400M BSV55AP BSV55P T072 GM300
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

Contextual Info: SERIES PD SINGLE - 100 WATTS - INPUT 200-380 VDC MAX LOAD REGULATION EFF.O M AX OUTPUT pone? LOAD TYPICAL W (*) 3.3 50 75 200-380 5 5.2 75 78 1.25 200-380 9 100 84 1.25 200-380 12 100 85 1.00 iiv r VÛUX0E RANGE (VDC) OUTPUT VOLJMX DC PD3.3S 200-380 PD5S

PD28S

Abstract: PD48S PD48D
Contextual Info: Isolated Regulated 100 Watts, Wide Input Range/200-380 VDC Fully Regulated, Short Circuit Protected Parallel Operation Available Features: Dual isolated outputs Short circuit protection Input voltage protection Thermal, over temp. shutdown Line regulation

sis*307elv

Abstract: 9lpr600 SiS307ELV 88E8056 SIS 672 Sis 968 south bridge SIS 968 Asus PT116 slb9635
Contextual Info: 5 4 3 2 CPU 1 ITP CONN. Z62H MEROM Socket-P CLOCK GEN ICS 9LPR600 D FSB 667MHz/533MHz LVDS LCD SiS 307 ELV HDV Bus VBus RGB CRT D DDR CLOCK BUFFER THERMAL SENSOR ICS 9P935AF NORTH BRIDGE DDR2 Single Channel MAX6657MSA DDR2 SO-DIMM0 DDR2 667MHz/533MHz SiS 672

SiS968

Abstract: kb3925 88E8056 t1733 SIS672 INVERTER BOARD Asus A6 ASUS ALC888-GR GC105 NC108
Contextual Info: D C B A 5 Internal KB CRT LCD DDR2 32MX16M X4 Digitally signed by dd DN: cn=dd, o=dd, ou=dd, email=dddd@yahoo. com, c=US Date: 2009.11.28 07:26:12 +07'00' CBB Touch Pad Synaptics EC SPI FLASH 4 ATI GPU M72-S ࣯ࣳࣞ࣪ ࣰࣩࣳ࣡ 632 BGA Debug Connector

PT76S16

Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Contextual Info: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

C621

Abstract: SD5013 2N551 transistor c640 npn Transistors 2n551
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

18200T

Abstract: germanium low power 150mW 460MSA 2N2097A C621 LM 18200T P1004 RT1116 2SC814 transistor C633
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

GM300

Abstract: CM602 ft06 transistor C633 FSP400 2n1763 C621 DA402 2N2458 transistor c640 npn
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C

Contextual Info: DC­DC Converters Series HPD Single and Series HPD Dual Isolated Regulated up to 200 Watts, Wide Input Range/200­380 VDC Fully Regulated, Short Circuit Protected Parallel Operation Available Features: Dual isolated outputs Short circuit protection

Contextual Info: 波長可変光源 理想の色を自在に再現 •用途 生体光刺激 デバイス分光特性評価 材料光物性評価 照明 用途 植物光合成活性植物培養、生体細胞光刺激 ・高出力 850 mol/m2/s at 700 nm 123