UPA64H
Abstract: PA64H IRZ 46 T108 diode 476 k upa64 8 pin ic 3773
Contextual Info: NEC m =t=fi\rx Aa Di ode Ar r ay //PA64H i t K 7 K Silicon Epitaxial Diode A rray High Speed Switching aîPA64Hi±, 7 / - SIP ' r - ' J > ) •> K * i i ü ï ü X 'f f l ^ H / P A C K A G E D IM E N S IO N S tc, (U nit : mm) (em?) -y V t„ ¡^ S / F E A T U R E S
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upa64hpa64hipa64hirz 46+4t108diode 476 kupa648 pin ic 3773
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PA54HA
Abstract: PA54H PA64HA 439C MA127 MA193 MA718 RB731U 723B PA64H
Contextual Info: - & m % % MAI 26 MA 127 MAI 28 MAI 93 MA718 MDA3U3 RB731U Sili— 12 S1U-1N S1U-1P UMN1 UMN11 UMP1 UMP11 IL PA54HA li PA64HA £ fé Io, If * r & # ÌFSM Vr V (V) imA) (°C) 80 80 80 80 30 225 225 225 150 150 80 80 80 SO 30 * v i? y 3k D — A 25 800 fr^TÉ
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ma127ma193ma718mm303+11rb731us11j-12dap202kpa64hae138811minpa54hapa54h439c723bpa64h
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PA54HA
Abstract: PA64HA PA64H 439C MA127 MA193 MA718 RB731U PA54H
Contextual Info: - & m % % MAI 26 MA 127 MAI 28 MAI 93 MA718 MDA3U3 RB731U S i l i —12 S1U-1N S1U-1P fò T * £ fé T& # Io , I f * r & # ÌFSM r& # Vpmax A < °c ) (V ) V r rm Vr (V ) (V ) imA) ( °C ) 80 80 80 80 30 225 225 225 150 150 80 80 80 SO 30 * v i? y 3k ÌFM
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ma127ma193ma718mm303+11rb731us11j-12151j-12hee110vumn11ump11pa54hapa64hapa64h439cpa54h
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pa54ha
Abstract: PA64H PA64HA 6-1256 439C MA127 MA193 MA718 RB731U
Contextual Info: - & m % % MAI 26 MA 127 MAI 28 MAI 93 MA718 MDA3U3 RB731U S i l i —12 S1U-1N S1U-1P fò T * £ fé T& # Io , I f * r & # ÌFSM r& # Vpmax A < °c ) (V ) V r rm Vr (V ) (V ) imA) ( °C ) 80 80 80 80 30 225 225 225 150 150 80 80 80 SO 30 * v i? y 3k ÌFM
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ma127ma193ma718mm303+11rb731us11j-12151j-12hee110vumn11ump11pa54hapa64hpa64ha6-1256439c
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pa54ha
Abstract: 439C MA127 MA193 MA718 RB731U S1U-1P KT 505 PA64HA
Contextual Info: - & m % % MAI 26 MA 127 MAI 28 MAI 93 MA718 MDA3U3 RB731U S i l i —12 S1U-1N S1U-1P fò T * £ fé T& # Io , I f * r & # ÌFSM r& # Vpmax A < °c ) (V ) V r rm Vr (V ) (V ) imA) ( °C ) 80 80 80 80 30 225 225 225 150 150 80 80 80 SO 30 * v i? y 3k ÌFM
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ma127ma193ma718mm303+9rb731us11j-1233min17minpa54ha439cs1u-1pkt 505pa64ha
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PA54H
Abstract: pa54ha J270 439C MA127 MA193 MA718 RB731U PA64HA
Contextual Info: - & m % % MAI 26 MA 127 MAI 28 MAI 93 MA718 MDA3U3 RB731U S i l i —12 S1U-1N S1U-1P fò T * £ fé T& # Io , I f * r & # ÌFSM r& # Vpmax A < °c ) (V ) V r rm Vr (V ) (V ) imA) ( °C ) 80 80 80 80 30 225 225 225 150 150 80 80 80 SO 30 * v i? y 3k ÌFM
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ma127ma193ma718mm303+11rb731us11j-12151j-12hee110vumn11ump11pa54hpa54haj270439cpa64ha
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UPA64H
Abstract: IC-1406 PA64H 81RK J226 c 1406 ha
Contextual Info: NEC DIODE A RRAY ¿¿PA64H ELECTRON DEVICE HIG H SPEED S W IT C H IN G S IL IC O N E P IT A X IA L DIO DE A R R A Y DESCRIPTION The ¿PA64H is a com m on anode m o n o lith ic array o f six high speed sw itch in g diodes. FEATURES PACKAGE DIMENSIONS in millimeters
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upa64hxpa64hic-1406pa64h+381rkj226c 1406 ha
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