RB731U Search Results

PA54HA

Abstract: PA64HA PA64H 439C MA127 MA193 MA718 RB731U PA54H
Contextual Info: - & m % % MAI 26 MA 127 MAI 28 MAI 93 MA718 MDA3U3 RB731U S i l i —12 S1U-1N S1U-1P fò T * £ fé T& # Io , I f * r & # ÌFSM r& # Vpmax A < °c ) (V ) V r rm Vr (V ) (V ) imA) ( °C ) 80 80 80 80 30 225 225 225 150 150 80 80 80 SO 30 * v i? y 3k ÌFM

Contextual Info: RB731U Diodes Schottky barrier diode RB731U zExternal dimensions Unit : mm 2.9±0.2 1.9±0.2 1.1 0.8±0.1 0.95 0.95 (3) D3P (6) (5) +0.2 −0.1 (2) 2.8±0.2 (1) 1.6 zFeatures 1) Small surface mounting type. (SMD6) 2) Low VF and low IR. 3) Three diodes in parallel for easy installation.

RB731UTW

Contextual Info: RB731UTW SURFACE MOUNT TRIPLE SCHOTTKY DIODES This device features three electrically-isolated Schottky diodes housed in a very small SOT-363 package.It is ideal for appliactions where board space is at a premium. FEATURES • Low reverse leakage current guaranteed < 0.98µA@25V

Contextual Info: RB731UTW SURFACE MOUNT TRIPLE SCHOTTKY DIODES This device features three electrically-isolated Schottky diodes housed in a very small SOT-363 package.It is ideal for appliactions where board space is at a premium. FEATURES • Low reverse leakage current guaranteed < 0.98µA@25V

Contextual Info: RB731U SURFACE MOUNT TRIPLE SCHOTTKY DIODES SOT- 23-6L This device features three electrically-isolated Schottky diodes housed in a very small SOT-23-6L package. It is ideal for applications where board space is at a premium. 4 5 FEATURES 6 3 Low reverse leakage current guaranteed <0.98uA @ 25V

Rb731utw

Contextual Info: RB731UTW SURFACE MOUNT TRIPLE SCHOTTKY DIODES This device features three electrically-isolated Schottky diodes housed in a very small SOT-363 package.It is ideal for appliactions where board space is at a premium. FEATURES • Low reverse leakage current guaranteed < 0.98µA@25V

pa54ha

Abstract: PA64H PA64HA 6-1256 439C MA127 MA193 MA718 RB731U
Contextual Info: - & m % % MAI 26 MA 127 MAI 28 MAI 93 MA718 MDA3U3 RB731U S i l i —12 S1U-1N S1U-1P fò T * £ fé T& # Io , I f * r & # ÌFSM r& # Vpmax A < °c ) (V ) V r rm Vr (V ) (V ) imA) ( °C ) 80 80 80 80 30 225 225 225 150 150 80 80 80 SO 30 * v i? y 3k ÌFM

Contextual Info: RB731U + Diodes Schottky barrier diode AEC-Q101 Qualified RB731UFH zApplications Low current rectification zExternal dimensions Unit : mm) zLand size figure (Unit : mm) 㪈㪐 㪇㪅㪐㪌 r  㨪   r r  zStructure r 

Contextual Info: if 4 K/Diodes RB731U RB731U > V =] > X fc° £ =5f V T \,W s 3 'y h * - / V J 7 # U - K Silicon Epitaxial Schottky Barrier Diodes • £w fi T r & S /D im e n s io n s Unit : mm) 1) ( im d d )o 2) r a i á í • Features 1) Small surface mount type (IMDD).

RB731U

Contextual Info: RB731U Diodes Schottky barrier diode RB731U zApplications Low current rectification zLand size figure Unit : mm zExternal dimensions (Unit : mm) 㪈㪐 㪇㪅㪐㪌 r  㨪   r r zConstruction Silicon epitaxial planar  zStructure

Contextual Info: RB731U Diodes Schottky barrier diode RB731U zApplications Low current rectification zLand size figure Unit : mm zExternal dimensions (Unit : mm) 19 0.95 2.9±0.2 1.6 0～0.1 (2) (1) 0.8±0.1 1.9±0.2 zConstruction Silicon epitaxial planar 0.95 0.95 0.6 0.35 0.35 0.45

Contextual Info: Diodes Schottky Barrier Diode RB731U •A p p lic a tio n s •E xternal dimensions Units: mm High speed switching 2 9 + 0 .2 •Features ,1 .9 ± 0 .2 _ ' 10.9 5 ,095 1JDesigned for mounting on small surface areas (SMD6) • 3)Three diodes situated in parallel for easy installation.

RB731U

Abstract: 7848 F 7848
Contextual Info: REFERENCE 30-Oct-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RB731U No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current XTI

PA54HA

Abstract: PA54H PA64HA 439C MA127 MA193 MA718 RB731U 723B PA64H
Contextual Info: - & m % % MAI 26 MA 127 MAI 28 MAI 93 MA718 MDA3U3 RB731U Sili— 12 S1U-1N S1U-1P UMN1 UMN11 UMP1 UMP11 IL PA54HA li PA64HA £ fé Io, If * r & # ÌFSM Vr V (V) imA) (°C) 80 80 80 80 30 225 225 225 150 150 80 80 80 SO 30 * v i? y 3k D — A 25 800 fr^TÉ

RB731U

Abstract: 1n05
Contextual Info: RB731U Diodes Schottky barrier diode RB731U !External dimensions Units : mm 2.9±0.2 1.9±0.2 1.1 +0.2 −0.1 2.8±0.2 1.6 !Features 1) Small surface mounting type. (SMD6) 2) Low VF and low IR. 3) Three diodes in parallel for easy installation. +0.2 −0.1

PA54H

Abstract: pa54ha J270 439C MA127 MA193 MA718 RB731U PA64HA
Contextual Info: - & m % % MAI 26 MA 127 MAI 28 MAI 93 MA718 MDA3U3 RB731U S i l i —12 S1U-1N S1U-1P fò T * £ fé T& # Io , I f * r & # ÌFSM r& # Vpmax A < °c ) (V ) V r rm Vr (V ) (V ) imA) ( °C ) 80 80 80 80 30 225 225 225 150 150 80 80 80 SO 30 * v i? y 3k ÌFM

Contextual Info: RB731U SURFACE MOUNT TRIPLE SCHOTTKY DIODES SOT- 23-6L This device features three electrically-isolated Schottky diodes housed in a very small SOT-23-6L package. It is ideal for applications where board space is at a premium. 4 5 FEATURES 6 3 Low reverse leakage current guaranteed <0.98uA @ 25V

RB731U

Abstract: SMD6
Contextual Info: Diodes Schottky barrier diode RB731U FApplications High speed switching FExternal dimensions Units: mm Schottky barrier diodes FFeatures 1) Small surface mounting type. (SMD6) 2) Low reverse current and low forward voltage. 3) Three diodes in parallel for easy installation.

Contextual Info: RB731U Diodes Schottky barrier diode RB731U Applications Low current rectification Land size figure Unit : mm External dimensions (Unit : mm) 緱繮 緫綌繮縕 3/:‒1/3 緱綌緫耑翮耔綌 1砰1/2 )3* )2* 1/9‒1/2 2/:‒1/3 Construction Silicon epitaxial planar

RB731U

Contextual Info: RB731U Diodes Schottky barrier diode RB731U zExternal dimensions Unit : mm 2.9±0.2 1.9±0.2 1.1 0.8±0.1 0.95 0.95 (3) D3P (6) (5) +0.2 −0.1 (2) 2.8±0.2 (1) 1.6 zFeatures 1) Small surface mounting type. (SMD6) 2) Low VF and low IR. 3) Three diodes in parallel for easy installation.

Marking 731

Abstract: RB731U
Contextual Info: RB731U SURFACE MOUNT TRIPLE SCHOTTKY DIODES SOT- 23-6L This device features three electrically-isolated Schottky diodes housed in a very small SOT-23-6L package. It is ideal for applications where board space is at a premium. 4 5 FEATURES 6 3 Low reverse leakage current guaranteed <0.98uA @ 25V

RB731U

Contextual Info: RB731U Diodes Schottky barrier diode RB731U zApplications Low current rectification zLand size figure Unit : mm zExternal dimensions (Unit : mm) 19 0.95 2.9±0.2 1.6 0～0.1 (2) (1) 0.8±0.1 1.9±0.2 0.95 0.6 0.35 0.35 0.45 0.45 0.8MIN. SMD6 0.3～0.6 (3)

Contextual Info: RB731U Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current30m @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage25 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.200m V(FM) Max.(V) Forward Voltage370m @I(FM) (A) (Test Condition)1m

marking d3p

Contextual Info: Diode, Schottky barrier, surface mount RB731U These mold-type diodes are suitable for high density surface mounting on printed circuit boards. Each envelope contains three diodes. Dimensions U n its : mm 2 .9 ± 0 .2 0.95 Features • • I1, 1I — +00. 1i'