PA503T
Abstract: ESI-60 AE 1000-SS icnc sk 1061 PA502T SA-A DAX 3S
Contextual Info: MOS M O S Field Effect T ran sistor //PA 502T N MOS F E T Lfz 5 ^PA502T li, M O S F E T £ 2 U S ;!ï< L 7 t P i ± , > ftBEH 2 IUS&) f i l I mm) h c o H f iM t c * ic i t . ¡ft (5 o . i 6 IS :; -“ à3! ! " ^=5 it '-t-y'r-istm t-y-'f XcO'<-y'r-J d
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upa502tsc-59pa503tiei-620+7pa502tesi-60ae 1000-ssicncsk 1061sa-adax 3s
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pa1476h
Abstract: pa80c PA1501H pa1437h PA1478H PA1556A pa1428ah PA2981 PA571T PA1556AH
Contextual Info: CD-ROM版トランジスタ CD-ROM X13769XJ2V0CD00 08−1 トランジスタ パッケージ別早見表 • TO-92形トランジスタ V TO–92 CEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674
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x13769xj2v0cd002sa12062sc16742sa988+162sa9922sc18412sc18452sa7332sa9902sc945pa1476hpa80cpa1501hpa1437hpa1478hpa1556apa1428ahpa2981pa571tpa1556ah
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TXAL 228 B
Abstract: 2SAB12 K1589 2sc2554 k2499 P015M 2SD 1694 2482S K2134 diode zener nt 1243
Contextual Info: QUICK REFERENCE GUIDE 2 ELECTRICAL SPECIFICATION LIST 2 PIN ULTRA SUPER MINI MOLD • Noise Clipping Diode fMNCD[ JC Series) M axim am R atings5 Electrical Characteristics {T a = 2 5 ‘CJ O a = 2 5 ‘C ì Type No. Application V b r (V) P tm W ) M IN . S M A X
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/pa17q2pa1710txal 228 b2sab12+8k15892sc2554k2499p015m2sd 16942482sk2134diode zener nt 1243
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uPC2581
Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Contextual Info: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8
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pd7500x10679ejav0sg00mf-11341995p+10upc2581upc20022sd1557upa67cupb582upc1237upc3172p4m pin diagram2sc4328upc157
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pa68h
Abstract: YTFP150 PA63H NEC PA63H UPA33A YTF840 YTFP450 UPA50A PA71A pamt
Contextual Info: - 170 - f £ € tt £ m & m it vm * 1 ft h' V $ Vg s * m * fë I* _ P /P (A) * £ X (V) X fr* d r ch (W) (max) (A) Vg s (V) î£ Rî W s (min) (max) V d s (A) (V) (A) (Ta=25*C) « (min) (max) Vd s (V) (V) (V) Id (A) gm (min) (S) Vds (V) Id (A) YTF840
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40mvmax400mhz10niazpa503t+15pa502t12dbtyp60mvmax106nstyp180nstyppa68hytfp150pa63hnec pa63hupa33aytf840ytfp450upa50apa71apamt
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MFC 6030
Abstract: IC818 LI-506 C-PFH JE 33 PA503T uPA503T MG025 1F5-E IC-8182
Contextual Info: MOS M O S Field Effect Transistor /¿PA503T P M O S F E T 5 b V 2 H ¿¿PA503T ü , MOS FET ÿ 2 T '< 4 X - ? * > * , K U S S iK w fa - 1 , H g n x ( T O : mm) KW m h W H P J S ÌK ^ if ó L ^ to fl oo + 0.1 U * ,5Z - 0 .0 5 0.16 : m. # o SC-59 ' - t - v ' r - ' J t IrJ
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upa503tpa503tmfc 6030ic818+6li-506c-pfhje 33mg0251f5-eic-8182
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