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    P5504ED Search Results

    P5504ED Datasheets (2)

    Niko Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    P5504ED
    Niko Semiconductor P-Channel Logic Level Enhancement FET Original PDF 372.09KB 5
    P5504EDG
    Niko Semiconductor P-Channel Logic Level Enhancement FET Original PDF 299.56KB 5

    P5504ED Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    nikos

    Abstract: P5504ED nikos transistor P5504 niko-sem NIKOS Field Effect Transistor p-Channel Logic Level Enhancement Mode field effect transistor "Field Effect Transistor" 32uaa
    Contextual Info: P-Channel Logic Level Enhancement NIKO-SEM P5504ED Mode Field Effect Transistor Preliminary TO-252 D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -40V 55mΩ -8A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


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    p5504edo-252may-12-2004nikos+7nikos transistorp5504niko-semnikos field effect transistorp-channel logic level enhancement modefield effect transistor32uaa PDF

    P5504EDG

    Abstract: P5504EDG equivalent NIKO-SEM P5504EDG p5504edg Niko-Sem TO-252 P5504 nikosem niko-sem
    Contextual Info: NIKO-SEM P5504EDG P-Channel Logic Level Enhancement TO-252 Lead-Free Mode Field Effect Transistor D PRODUCT SUMMARY V BR DSS RDS(ON) ID -40V 55mΩ -8A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


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    p5504edgo-252aug-19-2004p5504edg equivalent+5niko-sem p5504edgp5504edg niko-sem to-252p5504nikosemniko-sem PDF

    P5504EDG

    Contextual Info: Single P-channel MOSFET ELM32403LA-S •General description ■Features ELM32403LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-40V Id=-8A Rds(on) < 55mΩ (Vgs=-10V) Rds(on) < 94mΩ (Vgs=-4.5V)


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    elm32403la-sp5504edgo-252aug-19-2004 PDF

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


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    5ce120c5ke120ca5ce120ca5ce12a+145ke12a5ce12c5ke12ca5ce12cacat7105camp1410esg547e2g547h2g547f2p5504edg equivalentg547i1sp8k10sp8k10sfd5tbld1117al PDF

    p2003bdg

    Abstract: p1504bdg P3003EDG P6006BD P5504EDG P5504EDG "cross reference" FDS6900AS Cross Reference P0804BD P2804BDG cross reference zxmp6A17
    Contextual Info: Issue Number | 002 21 July 2009 New Product Announcement MOSFETs address LCD TV and monitor backlighting Diodes Incorporated has introduced 15 MOSFETs tailored to the needs of power management in LCD backlighting, DC motor control and DC-DC converters. These MOSFETs have been


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    dmn3024lsddmn3024lssdmn2027lk3dmp3025lk3+16dmn3020lk3dmn3024lk3dmn4009lk3dmn4015lk3dmn4030lk3dmn4036lk3p2003bdgp1504bdgp3003edgp6006bdp5504edgp5504edg "cross referencefds6900as cross referencep0804bdp2804bdg cross referencezxmp6a17 PDF

    P70N02LDG

    Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
    Contextual Info: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG


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    o-263p45n02lsgp45n03ltgp75n02lsg+16p75n02ltgp0903bsgp0903btgp3055lsgp3055ltgp50n03lsgp70n02ldgp0603bdgp60n03ldgpa102fdgp2503npgp45n02ldgp0603bdp1703bdgp0403bdgp3004nd5g PDF

    Contextual Info: Single P-channel MOSFET ELM32403LA-S •General description ■Features ELM32403LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-40V Id=-8A Rds(on) < 55mΩ (Vgs=-10V) Rds(on) < 94mΩ (Vgs=-4.5V)


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    elm32403la-sp5504edgo-252aug-19-2004 PDF

    ELM32403LA

    Contextual Info: 单 P 沟道 MOSFET ELM32403LA-S •概要 ■特点 ELM32403LA-S 是 P 沟道低输入电容,低工作电压, 低导通电阻的大电流 MOSFET。 •Vds=-40V ·Id=-8A ·Rds on < 55mΩ (Vgs=-10V) ·Rds(on) < 94mΩ (Vgs=-4.5V) ■绝对最大额定值


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    elm32403la-sp5504edgo-252aug-19-2004+1elm32403la PDF

    Contextual Info: シングル P チャンネル MOSFET ELM32403LA-S •概要 ■特長 ELM32403LA-S は低入力容量 低電圧駆動、 低 ・ Vds=-40V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-8A ・ Rds on < 55mΩ (Vgs=-10V) ・ Rds(on) < 94mΩ (Vgs=-4.5V)


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    elm32403la-sp5504edgo-252aug-19-2004 PDF