P0109 Search Results

triac sot23

Abstract: TYN604 BTW66-400 SCR tyn612 TYN816 TYN058 TYN656 TYN658 TN2540-600G tyn610
Contextual Info: SCR & TRIAC fZT SGS-THOMSON ^ 7/ SCRs [ID fflm itM M D C g l SOT23 SOT 223 DPAK D2PAK SURFACE MOUNT SCRs Tj max = 1 25 °C except TS820-xxxB and TS420-xxxB : 110 °C It (rm s ) Ta (A ) (1) Tl (2) Tc (3) Ttab (4) (°C) P0102xL P0109xL 0,2 P0102xN X0202xN

EC103A

Abstract: To226AB MCR100-2 TAG 85 22 TECCOR EC103A SF1B12 226AB SN051 TO-226-AB BT149A
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number 10 15 20 25 30 35 40 GB201 GB201A SN051 AA101 AA10S 2N3032 AA115 2N3029 MCR204 E0100AO 1;0102Aj\ E0102AB E0102AO P0102AA P0102AB 10102 MMBS50S2 X0102AA BT149A BT149A 2N66B1 2N1931 P0109AA P0109AB P0107AA

ge c106c4

Abstract: 2SF106B SN103 9CR1 1300P GG-25 2N2013 2N327 AA103 TLF3006
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number 10 2SF106B 9CR1301C 2N890 2N882 2N5727 2SF524 AA103 AA110 AA117 P0102CA iJ11g~CB 15 20 2N6564 EC103C X0102CA 2N1935 P0109CA P0109CB P0107CA P0107CB ~g~g~g~ 25 30 35 40 P0100CA P0100CB P0101CA P0101CB P0110CA

P0109

Abstract: P0109DB P0109AB P0109BB P0109CB TAG SCR
Contextual Info: TAG SE:11IC0NDUCT0RS LTD b3 8 8 3 4 7 5 0 TAG SEMICONDUCTORS LTD D e I 653^4750 DDOObi? _7 _1_' 63C 0 0 6 9 7 P0109ABP0109DB S C R 'S 0.8 A 100-400 V <1pA TAG SEMICONDUCTORS LTD The P0109 series silicon controlled rectifiers are high perform ance planar diffused PNPN devices. These parts

CSD75202W15

Abstract: CSD75202
Contextual Info: CSD75204W15 www.ti.com. SLPS221 – OCTOBER 2009 Dual P-Channel NexFET Power MOSFET

CSD75202W15

Abstract: CSD75202 M0173-01 mosfet 94C CSD75204W15 SLPS221
Contextual Info: CSD75204W15 www.ti.com. SLPS221 – OCTOBER 2009 Dual P-Channel NexFET Power MOSFET

p0102 circuits

Abstract: P0109DA p0109
Contextual Info: P010XX Sensitive standard SCRs up to 0.8 A Datasheet − production data Description A G A K KA K G G A SOT-223 P0102xN TO-92 (P010xxA) Thanks to highly sensitive triggering levels, the P010XX SCR series is suitable for all applications where available gate current is limited, such as

p0107db

Abstract: TRIAC TAG 92 SCR TAG Semiconductors X0101MA P0107AA P0109AA TAG scr P0109DB tag semiconductors triacs RD101
Contextual Info: part Number Definition ta g s e m ic o n d u c to r s l t d E xam ple T 10 10M H : T = Glass passivated Triac 1 0 = 10A 1 0 = I g T 2 5 / 2 5 / 2 5 / 2 5 mA M = 600 V H = T Q -22 0 T ech n olo gy C u rre n t R ange |Q T -C u rre n t R ang e V o lta g e P ac ka g e

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

JIS B 0041

Abstract: P0109AL p5A MARKING p0102b P0111 P0102AL P0102BL P0102CL P1A marking sot23 P0109BL
Contextual Info: SGS-THOMSON iMœ [iL[i@¥[HMQra po i xxxL SENSITIVE GATE SCR FEATURES = 0.2A = 100 V to 400V • Low Ig t < 1|uA max to <200|j,A ■ It rm s ■ V drm DESCRIPTION The POIxxxL series of SCRs uses a high performance planar PNPN technology. These parts are intended for general purpose high

1CGK

Abstract: p0102b P0102AL P0102BL P0109AL P01XXXL 13 sot23 P0109
Contextual Info: P01xxxL 0.25A SCRS SENSITIVE Table 1: Main Features A Symbol Value Unit IT RMS 0.25 A VDRM/VRRM 100 and 200 V IGT 1 and 200 µA G K A G DESCRIPTION Thanks to highly sensitive triggering levels, the P01xxxL SCR series is suitable for all applications where the available gate current is limited such as

P0109AA

Abstract: P0109DA P0109 P0109BA P0109CA TAG SCR TAG Semiconductors
Contextual Info: b3 TAG S EM IC ON DU CTOR S LTD 8 8 3 4 7 5 0 TAG SEMICONDUCTORS LTD » F | ñ ñ 3 4 7 S a OOODbbfl 0 T ~ 63C 0 0 6 6 8 TAG SEMICONDUCTORS LTD ' TO 92 c Ta = 2 5 °C u nless otherw ise noted Parameter Part Nr. Symbol Repetitive Peak O ff State Voltage P 0109AA

p0102 circuits

Contextual Info: P010xx Sensitive standard SCRs up to 0.8 A Features A • IT RMS up to 0.8 A ■ VDRM/VRRM100, 200, 400 and 600 V ■ IGTfrom 5 to 200 µA G A K KA Description K Thanks to highly sensitive triggering levels, the P010xx SCR series is suitable for all applications

CSD75204W15

Abstract: G003
Contextual Info: CSD75204W15 www.ti.com SLPS221A – OCTOBER 2009 – REVISED OCTOBER 2010 Dual P-Channel NexFET Power MOSFET Check for Samples: CSD75204W15 FEATURES 1 • • • • • • • • PRODUCT SUMMARY Dual P-Ch MOSFETs Common Source Configuration Small Footprint 1.5-mm x 1.5-mm

TYN604 scr

Abstract: scr TYN604 BTW69-1000N TYN656 X0405XF tyn610 TYN116 tyn112 TYN256 TN1625-800G
Contextual Info: SCR & TRIAC SCRs D2PAK DPAK SOT 223 SOT23 SURFACE MOUNT SCRs Tj max = 125 °C except TS820-xxxB and TS420-xxxB: 110 °C Type IT(RMS) Ta (1) Tl (2) Tc (3) Ttab (4) (A) (°C) VRRM VDRM ITSM (V) (A) IRRM @ IDRM @ Tj max max (mA) Tj = 25°C dv/dt di/dt 67% V

Contextual Info: Æ T S G S -T H O M S O N ^ 7 # R LUGTIfiiOTIO POIxxxN SENSITIVE GATE SCR FEATURES = 0.8A - Vdrm = 100V to 400V • Low Ig t < 200 |aA ■ It r m s DESCRIPTION The POIxxxN series of SCRs uses a high performance planar PNPN technology. These parts are intended for general purpose high

Contextual Info: SHEET 1 OF 1 13.10 [.516 in] 2.50 [.098 in] TYP 5.00 [.197 in] 1 4 7 10 2 5 8 11 3 6 9 12 P.C.B. LAYOUT n.80 [.031 in] 12 4.00 [.157 in] 2.50 [.098 in] TYP 8.50 [.335 in] 4.00 [.157 in] 3.30 [.130 in] 3.00 [.118 in] 3.30 [.130 in] PUSH SWITCH FUNCTION 1

GK SOT23

Abstract: P0102BL P0102AL 5AA4 p0102b P0102BL 5AA4 P0102AL P0109AL 1CGK
Contextual Info: P01xxxL 0.25A SCRS SENSITIVE Table 1: Main Features A Symbol Value Unit IT RMS 0.25 A VDRM/VRRM 100 and 200 V IGT 1 and 200 µA G K A G DESCRIPTION Thanks to highly sensitive triggering levels, the P01xxxL SCR series is suitable for all applications where the available gate current is limited such as

m21ca

Abstract: SFOR3G42 sfor1g42 BT169D p0107db 03P4M 9CR1401C 2Nb91 150C35B s2512dk
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number 10 DCR 1003SN0404 PSIJ1900-3 PSIJ2200-3 FT2500CL6 FT2500CL6 PSIJ2600-3 PSIJ3000-3 PSIJ3400-3 PSIK4000-3 T7S7035564DN ~~~~~~ 15 20 BTX1B-300 40C35 40C35B 55C35 55C35B 55C35BF 55C35F 70C35B jgg5~!jt25 30

P0115DA

Abstract: P0115BA P0109DA P0111DA P0102BA P01xxx P0102DA
Contextual Info: P01xxxA  SENSITIVE SCR FEATURES n n IT RMS = 0.8A VDRM / VRRM= 200V to 600V DESCRIPTION High performance planar technology. These parts are intended for general purpose applications where low gate sensitivity is required. TO92 ABSOLUTE MAXIMUM RATINGS

Contextual Info: CSD75207W15 www.ti.com SLPS418 – JUNE 2013 Dual P-Channel NexFET Power MOSFET Check for Samples: CSD75207W15 FEATURES 1 • • • • • • • Dual P-Ch MOSFETs Common Source Configuration Small Footprint 1.5-mm x 1.5-mm Gate-Source Voltage Clamp

163-09

Abstract: P010951
Contextual Info: SHEET 1 OF 1 .90 [.035 in] .25 [.010 in] 3.30 [.130 in] 1 1.27 [.050 in] 2 .80 [.031 in] 2.50 [.098 in] 1.45 [.057 in] .60 [.024 in] 5.30 [.209 in] .65 [.026 in] 3.00 [.118 in] P.C.B. LAYOUT 3.50 [.138 in] 6.90 [.272 in] .10 [.004 in] 1.50 [.059 in] 2 1 CIRCUIT: DIAGRAM

Contextual Info: SHEET 1 OF 1 .90 [.035 in] .25 [.010 in] 3.30 [.130 in] 1 1.27 [.050 in] 2 .80 [.031 in] 2.50 [.098 in] 1.45 [.057 in] .60 [.024 in] 5.30 [.209 in] .65 [.026 in] 3.00 [.118 in] P.C.B. LAYOUT 3.50 [.138 in] 6.90 [.272 in] .10 [.004 in] 1.50 [.059 in] 2 1 CIRCUIT: DIAGRAM

CSD75202W15

Abstract: CSD75202 G003 Dual Gate MOSFET graphs battery protection Texas Instruments NexFET CSD75204W15
Contextual Info: CSD75204W15 www.ti.com. SLPS221 – OCTOBER 2009 Dual P-Channel NexFET Power MOSFET