OD100 Search Results

nir emitter leds with 700 to 900 nm

Abstract: ODD-660W ansi z136.1 -vcsel photodiode 650nm nep UV led diode 200 nm peak 1W OD-850-30-030 OD-800W ODD-42WB "infrared led" 800 nm 980 nm led nir
Contextual Info: Optoelectronics Data Book Innovators in Optoelectronics TABLE OF CONTENTS Alphanumeric Eye Safety

MOD-1005

Abstract: 249-S
Contextual Info: A N A LO G D E V IC E S 10-Bit Video Analog to Digital Converter FEATURES 10 Bits @ 5 M H z Word Rate One-27 Sq. In. PC Board Built-In Track-and-Hold — 25ps Aperture Uncertainty 20MH:i: Analog Input Bandwidth T T L Compatible Low 10-Watt Power Dissipation

bd501

Abstract: character generator 6572 MCM6571 ym oca cgob BCQB
Contextual Info: MCM6570 MCM6571 MCM6571A MCM6572 thru MCM6579 8192-BIT READ ONLY MEMORIES MOS ROW S E LEC T C H A R A C TE R G E N E R A TO R S IN -C H A N N E L , L O W T H R E S H O L D T h e M C M 6 5 7 0 is a m a s k -p ro g ra m m a b le 8 1 9 2 -b it horizontal-sear» r o w

case 297

Abstract: OD-100
Contextual Info: SUPER HIGH-POWER GaAlAs IR EMITTERS .130 MAX .039 .048 EPOXY FEATURES ANODE CASE .297 .302 • • • • • .357 .362 .100 .018 .200 .031 .014 .018 OD-100 CATHODE .500 Ultra high power output Four wire bonds on die corners Very uniform optical beam Standard 3-lead TO-39 hermetic package

C11371

Abstract: AD515K 2N 10261 transistor application circuit Transistor AF 138S analog devices modell 281 analog devices modell 118 Model 310J ac121 inverter welder 4 schematic
Contextual Info: ANALOG DEVICES DATA ACQUISITION PRODUCTS CATALOG SUPPLEMENT Introduction USING THIS CATALOG SUPPLEMENT This Supplement includes some 70 products introduced sub­ sequent to the publication o f our Data Acquisition Products Catalog. I f you do not already have the Data Acquisition

Contextual Info: Advanced Power MOSFET S F W /I9 6 1 0 FEATURES BVdss = -200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA Max. @ VOS= -200V

OD-100

Contextual Info: SUPER HIGH-POWER GaAlAs IR EMITTERS .130 MAX FEATURES ANODE CASE • Ultra high power output .357 .362 .039 .048 EPOXY OD-100 • Four wire bonds on die corners .100 .018 • Very uniform optical beam • Standard 3-lead TO-39 hermetic package .297 .302

OD-100

Contextual Info: SUPER HIGH-POWER GaAlAs IR EMITTERS .130 MAX FEATURES ANODE CASE • Ultra high power output .357 .362 .039 .048 EPOXY OD-100 • Four wire bonds on die corners .100 .018 • Very uniform optical beam • Standard 3-lead TO-39 hermetic package .297 .302

Contextual Info: OD-100 SUPER HIGH-POWER GaAIAs IR EMITTERS EPOXY FEATURES .014 • High reliability LPE Grown IR emitters .018 .130 MAX * t 500 • Ultra high power output • 880nm peak emission • Four wire bonded on die corners ANODE • Very uniform optical beam • Standard 3-lead TO-39 package

OF470JE

Abstract: OA104KE OD474JE 700-244 OA47 OA33GKE 226 20K 107 OD471JE
Contextual Info: 1878-2012.qxp:QuarkCatalogTempNew 9/13/12 7:02 PM Page 1878 INTERCONNECT TEST & MEASUREMENT 23 Carbon and Ceramic Composition Resistors Little Demon Series — Carbon Composition Molded Resistors RoHS OD Series — 5% Tolerance Continued Specifications

82559 Reference Manual

Contextual Info: 82559 Fast Ethernet* Multifunction PCI/ Cardbus Controller Networking Silicon Preview Datasheet Product Features • Optimum Integration for Lowest Cost Solution — Integrated IEEE 802.3 10BASE-T and 100BASE-TX compatible PHY — Glueless 32-bit PCI master interface

MOV 270/20

Abstract: 17052 LG 631 TV LG power supply MD 1803 FX 1000H PDI7052 1E40H-1E4EH D17052 nec upd 1511 Ub13b
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ELECTRON 0 EVICÍ a íP D I 7 0 5 2 O N -C H IP IM A G E D IS P L A Y CONTROLLER 4 -B IT S IN G L E -C H IP M IC R O C O N T R O L L E R FOR VOLTAGE S Y N TH E SIZER /¿PD17052 includes the image display controller IDC which is capable of various displays and the 4-bit single­

vmic 2128

Abstract: OD108 800-002128 VMIVME-2128 vmivme 2128 od060 OD113 am2 socket pin diagram OD021 OD063
Contextual Info: VMIVME-2128 128-bit High-Voltage Digital Output Board Product Manual 12090 South Memorial Parkway Huntsville, Alabama 35803-3308, USA 256 880-0444 w (800) 322-3616 w Fax: (256) 882-0859 500-002128-000 Rev. J 12090 South Memorial Parkway Huntsville, Alabama 35803-3308, USA

1F80H-1F8EH

Abstract: NEC 08F D17052 NEC 05F specification
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ELECTRONDEVICE / ¿ P D 1 7 0 5 2 O N -C H IP IM A G E D IS P L A Y CONTROLLER 4 - B IT S IN G L E -C H IP M IC R O C O N T R O L L E R FOR VOLTAGE S Y N TH E SIZER juPD17052 includes the image display controller IDC which is capable o f various displays and the 4-bit single­

I7 motherboard circuit diagram

Abstract: MOD-1205 radar system with circuit diagram MOD-1005 MOD-1020 MOD-1006 PC CIRCUIT diagram
Contextual Info: M O D -1005 Page 10 B its @ 5 M H z W o rd Rate O ne-27 Sq . In. P C Board Built-In T rack-and-H old - 2 5 p s A pertu re Uncertainty 2 0 M H z A n a lo g In p ut B a n d w id th T T L C om p a tib le L o w 10-W att P o w e r D issip a tion S ig n a l-to -N o ise Ratio G reater T h a n 58d B

transistor SR 13001

Abstract: IR photodiode 95w OD-520L UV led diode 200 nm peak 1W ODD-470W OD-830-99-070 ODD-525W ODD-660W OD50L OD-50L
Contextual Info: Optoelectronics Data Book Innovators in Optoelectronics TABLE OF CONTENTS Alphanumeric Eye Safety

Contextual Info: SUPER HIGH-POWER GaAIAs IR EMITTERS OD-100 FEATURES • Ultra high power output • Four wire bonds on die corners • Very uniform optical beam • Standard 3-lead TO-39 hermetic package • Chip size .030 x .030 inches All surfaces are gold plated. Dimensions are nominal

EIA 549 Class 130B transformer

Abstract: mcf 300.04 capacitor 225 35k 844 SMD av 1.40.00 mkt x2 .01uf NTC 20K honeywell 1000 rpm dc motor 12v 100watt BO 680Y clarostat POTENTIOMETER 73JA SMD MARKING CODE 503b 03028BR
Contextual Info: ND3% BASE1 XXXX0118-0396-1-P 396 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 20-07-11 Hour: 11:09 TS:TS date TS time CAPACITORS Find Datasheets Online CERAMIC CAPACITORS MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF 2 MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF CONT.

OD-50L

Abstract: OD-100 OD-50W OD50L 357 opto opto 357
Contextual Info: SUPER HIGH-POWER GaAlAs IR EMITTERS FEATURES ANODE CASE • Ultra high power output .357 .362 .250 .262 GLASS DOME • Four wire bonds on die corners .100 .018 OD-50L • Very narrow optical beam .324 .332 • Standard 3-lead TO-39 hermetic package • Chip size .030 x .030 inches

Contextual Info: SUPER HIGH-POWER GaAlAs IR EMITTERS FEATURES ANODE CASE EPOXY • • • • • .357 .362 .039 .048 .100 .018 .297 .302 .200 .014 .018 All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Two cathode pins must be externally connected together.

Contextual Info: SUPER HIGH-POWER GaAlAs IR EMITTERS OD-100 FEATURES ANODE CASE EPOXY • • • • • .357 .362 .039 .048 .100 .018 .297 .302 .200 .031 .014 .018 Ultra high power output Four wire bonds on die corners Very uniform optical beam Standard 3-lead TO-39 hermetic package

OD-100

Contextual Info: OPTO DIODE SSE D CORP • bAOl^fi □□□□11S 7T4 « O P D >-V/~ f.? SUPER HIGH-POWER GaAIAs IR EMITTERS OD-100 FEATURES • High reliability LPE Grown IR emitters • Ultra high power output • 880nm peak emission • Four wire bonded on die corners

Contextual Info: OPTO DIODE CORP SSE D • bflQlW 0DOD11S 714 ■ O P D / - V / W , ? SUPER HIGH-POWER GaAIAs IR EMITTERS OD-100 FEATURES • High reliability LPE Grown IR emitters • Ultra high power output • 880nm peak emission • Four wire bonded on die corners • Very uniform optical beam

PA 0016 PIONEER

Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
Contextual Info: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete