O220AB Search Results

IRF150CF

Abstract: GENTRON 2SK747A EUM159M 2SK798 EFM159M179 YTF152 YTFP150 2SK747
Contextual Info: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) Max (V) Clsa Max (F) tr Max (s) tf Max (s) Toper Max (OC) Package Style N-Channel Enhancement-Type, (Co nt' d) 5 10 BUZ349 BUZ349 SFN152 YTFP152

Contextual Info: MBR F,B 20H90CT & MBR(F,B)20H100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier High barrier technology for improved high temperature performance TO-220AB ITO-220AB MBR20H90CT MBR20H100CT PIN 1 PIN 2 PIN 3 CASE 2 3 1 1 2

V60100C

Contextual Info: V60100C New Product Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.360 V at IF = 5 A FEATURES • Trench MOS Schottky Technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation

VF30100S

Abstract: V30100S JESD22-B102D J-STD-002B
Contextual Info: V30100S & VF30100S New Product Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier TO-220AB Ultra Low VF = 0.385 V at IF = 5 A ITO-220AB Major Ratings and Characteristics IF AV 30 A VRRM 100 V IFSM 250 A VF at IF = 30 A 0.69 V

transistor C239

Abstract: transistor C238
Contextual Info: International HH Rectifier PD - 9.776A IRGBF20F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail” losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

transistor c246

Abstract: transistor c245 c245 transistor
Contextual Info: PD - 9.773 International üüRectffier IRGBF30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features JI* Lc J *.J • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve

v30100s

Contextual Info: V30100S, VF30100S, VB30100S & VI30100S New Product Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.385 V at IF = 5 A FEATURES • Trench MOS Schottky Technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses

Contextual Info: MBR1090CT & MBR10100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier FEATURES TO-220AB • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability

Diode SBL 2040CT

Abstract: 2030CT
Contextual Info: SBL F,B 2030CT & SBL(F,B)2040CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier TO-220AB FEATURES ITO-220AB • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability

Contextual Info: UG F,B 8HCT & UG(F,B)8JCT New Product Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier TO-220AB FEATURES • Glass passivated chip junction ITO-220AB • Ultrafast recovery time • Soft recovery characteristics • Low switching losses, high efficiency

VTS40100CT

Abstract: VB40100C
Contextual Info: VTS40100CT, VF40100C, VB40100C & VI40100C New Product Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.375 V at IF = 5 A FEATURES ITO-220AB TO-220AB • Trench MOS Schottky Technology • Low forward voltage drop, low power losses

V30100C

Abstract: JESD22-B102D J-STD-002B
Contextual Info: New Product V30100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A FEATURES • Trench MOS Schottky Technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation

MBR20H100CT

Abstract: MBR20H90CT MBRF20H100CT MBRF20H90CT 18AUG06
Contextual Info: MBR F,B 20H90CT & MBR(F,B)20H100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier High barrier technology for improved high temperature performance TO-220AB ITO-220AB MBR20H90CT MBR20H100CT PIN 1 PIN 2 PIN 3 CASE 2 3 1 1 2

v30100sg

Abstract: J-STD-002B 30100SG
Contextual Info: V30100SG, VF30100SG, VB30100SG & VI30100SG New Product Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A FEATURES ITO-220AB TO-220AB • Trench MOS Schottky Technology • Low forward voltage drop, low power losses

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

JESD22-B102D

Abstract: J-STD-002B
Contextual Info: New Product M3060C & MI3060C Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier TO-220AB FEATURES TO-262AA • Guardring for overvoltage protection K • Lower power losses, high efficiency • Low forward voltage drop 2 3 1 1 M3060C 2 • High forward surge capability

UG DIODE

Abstract: JESD22-B102D J-STD-002B UG18ACT
Contextual Info: UG F,B 18ACT thru UG(F,B)18DCT Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop

1640CT

Abstract: JESD22-B102D J-STD-002B SBL1630CT 914 High frequency schottky rectifier DIODE 914 High frequency rectifier DIODE
Contextual Info: SBL F,B 1630CT & SBL(F,B)1640CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier TO-220AB FEATURES • Guardring for overvoltage protection ITO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability

vf20100s

Abstract: J-STD-002B
Contextual Info: V20100S, VF20100S, VB20100S & VI20100S New Product Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A FEATURES ITO-220AB TO-220AB • Trench MOS Schottky Technology • Low forward voltage drop, low power losses

MBR10H90CT

Contextual Info: MBR F,B 10H90CT & MBR(F,B)10H100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for improved high temperature performance TO-220AB FEATURES • Guardring for overvoltage protection ITO-220AB • Lower power losses, high efficiency

MBR30H35CT

Contextual Info: MBR F,B 30H35CT thru MBR(F,B)30H60CT New Product Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier High Barrier Technology for improved high temperature performance TO-220AB FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency

Contextual Info: MBR F,B 2035CT thru MBR(F,B)2060CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier TO-220AB FEATURES • Guardring for overvoltage protection ITO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability

20H100CTG

Abstract: 20H100 MBR20H90CTG 20H90CTG
Contextual Info: MBR F,B 20H90CTG thru MBR(F,B)20H100CTG Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for improved high temperature performance TO-220AB ITO-220AB MBR20H90CTG MBR20H100CTG PIN 1 PIN 2 PIN 3 CASE 2