NOV03 Search Results

796136-1

Contextual Info: 107-97003 Packaging Specification ASSY, SMT BATTERY CONN Nov03.2008 Rev A 1. PURPOSE 目的 Define the packaging specifiction and packaging method of ASSY, SMT BATTERY CONN . 订定ASSY, SMT BATTERY CONN 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围

BSM181A

Abstract: BSM181AR NFC12 BSM 181 ar Eupec BSM
Contextual Info: BSM 181 A / BSM 181 AR SIMOPAC MODULE • Single switch power MOSFET module • N channel, enhancement mode • Avalanche rated • Package with insulated metal base plate • Built in gate series resistor Type VDS ID RDS on max Package Ordering Code BSM 181 AR

Contextual Info: BSM 101 AR SIMOPAC MODULE • Power module • Single switch • N channel • Enhancement mode • Pakage with insulated metal base plate Type VDS ID RDS on max Package Ordering Code BSM 101 AR 50 V 200 A 0.003 Ω SSW MOS 1 C67076-S1018-A20 Maximum Ratings

SOT23 voltage regulator 10V

Abstract: 3V REGULATOR SOT-23 marking 33a sot23 MARKING e SOT235 18Y SOT23 1V 3A LDO marking 8A sot-23 18a sot23 SOT-23 type name 1uf sot-23
Contextual Info: NIKO-SEM 200mA Fixed Voltage Low Dropout Linear Regulator LDO - Preliminary L1212 Series SOT-23 GENERAL DESCRIPTION FEATURES The L1212 Series are positive and low dropout voltage regulators with 200mA output current capability. These devices are designed for use in low voltage applications

P8503BMG

Contextual Info: P8503BMG N-Channel Logic Level Enhancement Mode Field Effect Transistor Preliminary NIKO-SEM SOT-23 Lead Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 85mΩ 3A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

MGFC47V5864

Abstract: mitsubishi optical transmitter
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> R/IGFC47V5864 5.8~6.4G H z BAND 50W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N OUTLINE DRAWING The MGFC47V5864 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.4GHz band amplifiers. The hermetically sealed metal-ceramic package

BTS333

Abstract: BTS 333
Contextual Info: HITFETBTS 333 Smart Lowside Power Switch Features Product Summary • Logic Level Input • Input Protection ESD • Temperature limitation adjustable by input voltage • Overload protection Drain source voltage VDS 42 V On-state resistance RDS(on) 18

SC-75

Abstract: 857BT
Contextual Info: BC 847BT NPN Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 857BT 2 1 Type Marking BC 847BT 1Fs Pin Configuration 1=B 2=E VPS05996 Package

Contextual Info: BSM 111 AR SIMOPAC MODULE • Single switch power MOSFET module • N channel, enhancement mode • Avalanche rated • Package with insulated metal base plate • Built in gate series resistor Type VDS ID RDS on max Package Ordering Code BSM 111 AR 100 V

marking 69

Abstract: MARKING 06 SOT89 marking CE SOT-89 marking 69 SOT-89 sot-89 marking cg
Contextual Info: BCX 69 PNP Silicon AF Transistors 1 • For general AF applications 2 • High collector current 3 • High current gain • Low collector-emitter saturation voltage • Complementary type: BCX 68 NPN 2 VPS05162 Type Marking Pin Configuration Package BCX 69

ILA03N60

Abstract: ILB03N60 ILD03N60 ILP03N60 Q67040-S4626 Q67040-S4628
Contextual Info: ILA03N60, ILP03N60 ILB03N60, ILD03N60 ^ LightMOS Power Transistor C • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET

857T

Abstract: BC857AT BC857BT SC-75
Contextual Info: BC 857T PNP Silicon AF Transistor 3
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BC 847 .T 2 1 Type Marking Pin Configuration BC 857AT 3Es 1=B 2=E 3=C SC-75 BC 857BT 3Fs

Contextual Info: euoec F BSM 111 AR SIMOPAC MODULE • Single switch power MOSFET module • N channel, enhancement mode • Avalanche rated • Package with insulated metal base plate • Built in gate series resistor Type ^bs b f î DS on max Package Ordering Code BSM 111 AR

PA502FMG

Abstract: SEM 2004 p-Channel Logic Level Enhancement Mode niko-sem
Contextual Info: P-Channel Logic Level Enhancement NIKO-SEM PA502FMG Mode Field Effect Transistor SOT-23 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID -20 150mΩ -3A 1 :GATE 2 :DRAIN 3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS