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    NRVBA130LT3G Search Results

    NRVBA130LT3G Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    NRVBA130LT3G
    		On Semiconductor NRVBA130 - DIODE SIGNAL DIODE, Signal Diode Original PDF 150.09KB 5
    NRVBA130LT3G-VF01
    		onsemi DIODE SCHOTTKY 30V 1A SMA Original PDF 159.2KB
    NRVBA130LT3G-VF01
    		onsemi DIODE SCHOTTKY 30V 1A SMA Original PDF 303.13KB
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    NRVBA130LT3G Price and Stock

    onsemi

    onsemi NRVBA130LT3G

    DIODE SCHOTTKY 30V 1A SMA
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    DigiKey () NRVBA130LT3G Digi-Reel 1
    • 1 $0.47
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    NRVBA130LT3G Cut Tape
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    NRVBA130LT3G Reel
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    Vyrian NRVBA130LT3G 2,760
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    onsemi NRVBA130LT3G-VF01

    DIODE SCHOTTKY 30V 1A SMA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NRVBA130LT3G-VF01 Reel
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    onsemi SNRVBA130LT3G-VF01

    REC SMA 1A 30V SHTKY TR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SNRVBA130LT3G-VF01 Reel
    • 1 -
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    NRVBA130LT3G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: MBRA130LT3G, NRVBA130LT3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		MBRA130LT3G, NRVBA130LT3G MBRA130LT3/D PDF

    MBRA130LT3G

    Abstract: b1l3
    Contextual Info: MBRA130LT3G, NRVBA130LT3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		MBRA130LT3G, NRVBA130LT3G AEC-Q101 MBRA130LT3/D MBRA130LT3G b1l3 PDF