NDF06N60ZG
Abstract: NDP06N60Z 221D A114 JESD22
Contextual Info: NDF06N60Z, NDP06N60Z N-Channel Power MOSFET 0.98 W, 600 Volts Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications http://onsemi.com VDSS RDS ON (TYP) @ 3 A
|
Original
|
ndf06n60zndp06n60zndf06n60z/dndf06n60zg+3221da114jesd22
|
PDF
|
NDF06N60ZG
Abstract: NDF06N60Z
Contextual Info: NDF06N60Z, NDP06N60Z N-Channel Power MOSFET 600 V, 1.2 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com
|
Original
|
ndf06n60zndp06n60zjesd22-a114ndf06n60z/d+1ndf06n60zg
|
PDF
|
NDF06N60ZG
Abstract: NDP06N60Z 221D A114 JESD22 NDP06N60ZG
Contextual Info: NDF06N60Z, NDP06N60Z N-Channel Power MOSFET 600 V, 0.98 W Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise noted
|
Original
|
ndf06n60zndp06n60zjesd22-a114ndf06n60z/d+5ndf06n60zg221da114jesd22ndp06n60zg
|
PDF
|