N2005 Search Results

Contextual Info: TH I S D R A WI N G ßL IS UNPUBLI S HE D. C O P Y R I G H T 20 RELEASED BY TYCO ELECTRONICS CORPORATION F OR ALL P U B L I C A T I ON RIGHTS 20 L OC AJ RESERVED. R E V I S I ONS Dl S T I6 LTR DESCRIPTION DATE R E V I S E D PE R EC O S I 4 - 0 I 9 4 - 0 5

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

Contextual Info: Advance information AS7C3128K 16 3.3V 128Kx16 CMOS SRAM Features • Organization: 131,072 w ords x 16 bits • 3.3V±0.3 operation • High speed - 1 0 /1 2 /1 5 ns address access time - 5 / 6 / 8 ns output enable access time • Low power consumption - Active: 504 m W max 15 ns cycle

Contextual Info: SamsungSemi conduct orEur ope2008 i magi net henews t andar di nmemor yper f or mance Samsung cont i nues t ol ead i n DRAM memor y wi t h ournew DDR3 memor y modul el i neup.Whet heri nst al l ed i n newgener at i on PC' s, hi ghper f or mancewor kst at i