N07ES Search Results

Contextual Info: 10 4.3 0.735 2.83 0.735 / >ii3 N07ES: 1 . 35AI44I4 M A7ERIA L E l/ \AfLTTAL* ,U L94V-0 4I WAFER :LIQUID C RYS7RAL POLYMER (GLASS FILLED), U L 9 4 V -0 (C0L0R:BLACK) ILL ( t = 0 . 1 5) PIN :BR ASS( t =0. I5) 2. X u L t U S t PLAYING # X x X 0.25 M IC R0ME7ER MINIMUM ( L L L L F E E )

Contextual Info: or © I T ro ^r . LO O | 00 0o5 -rm □ □ □ □ □ □ tp T tp □ □ □ □ □ □ [ pn 1 * 0.6 •-S- ^ \ 0 o6 ^ 2 ^ 18.35 15.85 10.85 C MODEL NO. GENERAL TOLERANCES UNLESS SPECIFIED MATERIAL o m< oo ^ <[ 0 M 3»m SEE N07ES I CM =F= i— L i

IO-72

Abstract: 1.25 wire to board SD5114 ZR 720
Contextual Info: 10 N07ES MS, H H - M ATE S 10 2 . ^ - = ^ ^ 5004 1-8* APPLICABLE TERMINAL : 50641-8* 0.735 11.2 5 A ? : 5 3 7 7 9 - * * I0 , 5 3 7 8 0 53779-*IO , 53780-* IO L tìX 'è tl (0.5) 0.G25 APPLY EVEN CIRCUI7 PRODUCTS. (P IT C H ) A. » 4 ; POLYAMIDE(PA), ULgiV-Q

Contextual Info: 7 1723 71723 .300- iF iF „690 EMI S HI EL D UP P E R HALF OONNEOT OR 7 1720- 1000 PURCHASED S E P A R A 7 E L Y REFER 70 S ALE S DRAWING NUMBER 5DA-7l720-*000 c 165 .405 I EMI S HI EL D LOWER HALF I N07ES: 1. P L A 7 I N G : 2. 100 MI CROI NCHES MINIMUM BR I GH7 NI CK E L

Contextual Info: 10 0.45 0.3* 0.5 “ ( P A tO (PITCH) 0.735 (2.83) (^ A T u N ffi) 0.735 P.C.BOARD PATTERN DIMENSION. (REF.) (MOUNTING AREA) f H 0 U \- WEFER LOCK POSITION p I I 1 hmm,V///////m SECT.W-W(LOCK PART) SECT.V-V(W/0 NON 20 ,55 19.5 2 1,45 5556 0-08 0 80 0,2 15.55

Contextual Info: 10 0.45 0.3* 0.5 “ ( P A tO (PITCH) 0.735 (2.83) (^ A T u N ffi) 0.735 P.C.BOARD PATTERN DIMENSION. (REF.) (MOUNTING AREA) f H 0 U \ WEFER LOCK POSITION p I 1 I hmm,V///////m SECT.W-W(LOCK PART) SECT.V-V(W/0 NON 20 ,55 19.5 2 1,45 5556 0-08 0 80 0,2 15.55

I25VAC

Contextual Info: C A T A L O G L I S T I N G T H I S D R A W IN G H O N E Y W E L L . a SWITCH - TOGGLE sion FED. MFG. CODE C O V E R S T H I S 631NT91 SERIES CHART 1 KEYWAY SIDE CATALOG L I S T I NG 0 7 6± WIDE KEYWAY P R O P R I E T A R Y IS NOT TO 63 I NT9 63 I NT 9

Contextual Info: 4 TH IS DRAWING IS U N P U B LIS H E D . 3 2 RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. COPYRIGHT DW BY TYCO ELECTRONICS CORPORATION. - R E V IS IO N S DE SC R IPTIO N LTR A' POSITION REVI SED PER DWN DATE KK HMR 18JAN10 E C O - 10 - 0 0 0 4 4 4

Contextual Info: 10 a HOTES 1. S n Dn l f l l t ; i l » n Dn i H * S f f i i - # l L T T i I ' . FOR DETAIL THE DRAWIN G 2. OF : CONNECTOR OF DIMENSIONS,PLEASE CONNECTOR 760 f t ITSELFfN O T SEE PACKAGED). J - J K NUMBER OF CONNECTORS : 7 6 0 P C S /R E E L 3. J— y -a y

Contextual Info: THIS DRAWING AND DESIGN HEREON CON­ STITUTES A PROPRIETARY DESIGN OF PACKARD ELECTRIC DIVISION AND IS NOT TO BE DUPLICATED OR REPRODUCED WITH­ OUT AUTHORITY OF PACKARD ELECTRIC DIVISION. DATE SYM REVISION RECORD 23N085 A RELEASED A DDED 6 . 9 0 DIMENSION? R EV I SED

motorola TE 901

Abstract: p736 MAC320A4FP MAC320A6FP MAC320A8FP
Contextual Info: . Order this data sheet by MA~20AWlD MOTOROLA SEMICONDUCTOR —- -—- — — -— TECHNICAL Advance MAC320A4FP MAC320A6FP MAC320A8FP MAC320Al~FP Information Triacs Silicon Bidirectional Thyristors . designed primarily for full-wave ac control applications, such as solid-state relays,

Contextual Info: D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R A LL P U B L IC A T IO N R IG H TS LOC D IS T REVISIO N S RESERVED. C O P Y R IG H T D E S C R IP T IO N J2 E C R —1 2 —0 0 5 7 2 6 RK 27MAR12 D M A T E R IA L S : BO DY.BRASS PER Q Q - B - 6 2 6

D 304 x

Abstract: 57RA
Contextual Info: T H I S COPY I S PROVIDED ON A RESTRICTED B A S IS AND I S NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE PART — „ 8 9 - E 57 RA PPIN 6 [22 „6 l] „ 735 „ 625 PANDUIT [ l 8 „ 67] O NO. INTERESTS OF PANDUIT CORP. M A TERIAL MS4W63715-D4 304 MS4W63715-D6

Contextual Info: 6 7 DRAWI NG MADE THIS IN THIRD DRAWI NG ANGL E 15 UNPUBLI 5HED COPYRIGHT 4 5 19 RELEASED BY AMP FOR P U B L I C A T I O N INCORPORATED. ALL 2 3 <3> PROJECTION INTERNATIONAL RIGHTS D I ST LOC 19 CM RESERVED. REV I 5 I 0 N 5 54 LTR ZONE DE5CRIPTION z ii

m12j

Abstract: BY03 I2020
Contextual Info: Z £ -P X IA | Z £ 0 3 I0 -N 3 “ â = i ï â S 3 f i f f t > K / l a ü œ ^ ' ï s 2 . C 0 ,3 O > 2 3 § ! I ' | l (5; £ ^ ; i/EÎcC, e * * ) DWG. NO. S D - 5 2 7 4 6 - * * 19 F 0 .5 (N + 0 .5 0 .5 (N + <Z). 5 ( N - 0„5_ 0 .5 0 .5~ 0 .5 (N - + 0 .0 4

5559 MOLEX

Abstract: MOLEX 5559 series 5559-02P 5559- MOLEX 5559-02PI-2I0 5559-06PI 5559-04P1-BL MOLEX 5559-02P 5559 5559-24P
Contextual Info: 13 12 10 C KT . S IZ E D IM . A 6 8 I0 I2 .661 .8 7 4 16.80 (2 2 .2 0 ) .8 2 7 1.039 (2 1.00) (2 6 .4 0 ) 1.205 ( 3 0 .6 0 ) 1.370 (3 4 .8 0 ) 1.323 1.535 (3 3 .6 0 ) ( 3 9 .0 0 ) 1.488 1.70 1 (3 7 .8 0 ) 22 (4 3 .2 0 ) 1.654 1.866 (4 2 .0 0 ) (4 7 .4 0 )

Contextual Info: DWG. NO. SD-5 128 1-007 DO NOT S C AL E DR AW IN G EC NO. DRWN: CH'K: APPR: EC NO. DRWN: CH'K: APPR: REVISED '03/09/05 J2004-044 DRWN: M . H A Y A S H I CH'K: S.KUNISHI ec no. T.YAMAGUCHI APPR: REVISED '02/08/09 J2003-042 DRWN: M . H A Y A S H I CH-K: S.KUNISHI

n5558

Contextual Info: 13 CKT. S IZ E 12 ENG. NO. 10 DIM. "A" R EF. EDP. NO. DIM. 'B 1 ENG. NO. CIRCUI7 .467 30068-4 „ 165 (4.20 15-97-604 30068- 15-97-608 30068- IO 15-97-6101 30068- I4 I6 N07 7 OOLED SEE S H T. 2 FOR ( .633 (I6.0É (12.60) .66 I (20.27 .992 1.294 (32.87 £

1N5160

Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
Contextual Info: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A

CP78-26022

Contextual Info: 4 T H IS D R A W IN G 2 IS U N P U B L IS H E D . RELEASED FOR P U B L IC A T IO N - - REVISIO N S A L L R IG H TS R E S E R V E D . C O P Y R IG H T By - LTR D E S C R IP T IO N K1 RE VISED PER ECO- DATE -005030 DWN A PVD RK HMR MAR1 D n ir- l/3 y ' LOCATION MARK